Renesas HZK30TR-S-E

Overview

HZK30TR-S-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for voltage regulation and stabilization in low-power supply circuits, with a nominal zener voltage of 30 V (min 28.2 V, max 31.6 V), 2 mA test current, 100 Ω dynamic resistance, 500 mW power dissipation, and LLD surface-mount package. It serves in precision reference and overvoltage protection roles within industrial power supplies and sensor signal conditioning circuits.

For engineers reviewing the HZK30TR-S-E datasheet, HZK30TR-S-E pinout, HZK30TR-S-E application, or HZK30TR-S-E equivalent, key selection criteria include zener voltage tolerance (±5.3% at 2 mA), temperature coefficient (≈+0.045 %/°C), low leakage (<1 µA at 23 V), junction temperature rating (175°C), and compatibility with high-density PCB assembly using the LLD package.

Technical Context

The HZK30TR-S-E operates as a two-terminal voltage reference device relying on controlled reverse-biased avalanche breakdown. Its zener voltage is specified at 2 mA DC test current, with dynamic resistance measured under the same condition to ensure stable regulation under small-signal load variations.

It exhibits a positive temperature coefficient of approximately +0.045 %/°C (or +13.5 mV/°C) near 30 V, consistent with higher-voltage Zener diodes in the HZK series. The device is rated for operation from –55°C to +175°C storage and junction temperature, with derated power dissipation above 25°C ambient per the published curve.

Key Specifications

Pinout & Package

The HZK30TR-S-E uses the LLD package: a miniature cylindrical glass-epoxy molded case with axial leads trimmed for surface mounting, measuring φ1.4 ± 0.1 mm × 3.5 mm length, mass ≈ 0.027 g. Cathode identified by colored band (Light Blue–Purple–Pink per marking code).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with MM3Z30VT1G and BZX55C30, the HZK30TR-S-E offers identical power rating to BZX55C30 but superior thermal performance (175°C T_j vs. 150°C), while its LLD package provides smaller footprint than DO-35 yet larger thermal mass than SOD-323 for sustained 2 mA operation.

Availability

HZK30TR-S-E is available at Aetrix Electronics and suitable for industrial power monitoring, sensor signal conditioning, low-power reference supply, and embedded system reset circuitry requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for HZK30TR-S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and infrastructure markets.

The HZK Series was developed by Renesas Electronics as a family of general-purpose silicon Zener diodes optimized for stabilized DC power supply applications, emphasizing low leakage, consistent dynamic impedance, and high-reliability surface-mount packaging.

FAQ

What is the zener voltage tolerance of HZK30TR-S-E at 2 mA?

The HZK30TR-S-E has a zener voltage range of 28.2 V to 31.6 V when tested at I_Z = 2 mA, corresponding to a ±5.3% tolerance about the nominal 30 V value. This specification is confirmed in the Electrical Characteristics table on page 3 of the official Renesas HZK Series datasheet (Rev. 3.00, May 2003). The HZK30TR-S-E must be biased at exactly 2 mA to guarantee compliance with this tolerance band.

Does HZK30TR-S-E have a specified temperature coefficient?

Yes, the HZK30TR-S-E exhibits a positive temperature coefficient of approximately +0.045 %/°C (or +13.5 mV/°C), derived from Figure 2 in the Renesas HZK Series datasheet. This value is typical for 30 V Zener diodes in the series and reflects the device's voltage drift behavior across operating temperature. The HZK30TR-S-E maintains regulation stability within industrial temperature ranges due to this predictable coefficient.

What is the maximum reverse leakage current for HZK30TR-S-E?

The maximum reverse leakage current for HZK30TR-S-E is less than 1 µA when subjected to a reverse voltage of 23 V at 25°C, as specified in the Electrical Characteristics table. This low leakage supports energy-efficient designs, especially in battery-powered systems where standby current must be minimized. The HZK30TR-S-E achieves this performance via silicon epitaxial planar construction and precise doping control.

Is HZK30TR-S-E compatible with lead-free reflow soldering processes?

Yes, the HZK30TR-S-E's LLD package is qualified for standard lead-free reflow soldering profiles, including peak temperatures up to 260°C for 10 seconds, consistent with JEDEC J-STD-020 requirements. The glass-epoxy molding compound and metallization system are engineered for thermal shock resistance during reflow. The HZK30TR-S-E should be stored and handled per Renesas moisture sensitivity level (MSL) guidelines prior to assembly.

How does the dynamic resistance of HZK30TR-S-E affect voltage regulation accuracy?

The HZK30TR-S-E has a maximum dynamic resistance of 100 Ω at I_Z = 2 mA, meaning a 1 mA change in zener current causes up to a 100 mV shift in output voltage. This directly impacts regulation accuracy under varying load conditions. Designers must size the series bias resistor to maintain I_Z within ±0.5 mA to hold output variation within ±50 mV. The HZK30TR-S-E's r_d is measured under DC conditions and remains stable across its rated temperature range.