Renesas HZK3CTR-S-E

Overview

HZK3CTR-S-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for voltage regulation in low-power stabilized power supplies. It delivers a nominal zener voltage of 2.8 V (Grade B), with maximum dynamic resistance of 100 Ω at 5 mA, 500 mW power dissipation, and operates across –55°C to +175°C storage temperature. It is used in precision reference circuits for sensor signal conditioning and microcontroller reset supervision.

For engineers reviewing the HZK3CTR-S-E datasheet, HZK3CTR-S-E pinout, HZK3CTR-S-E application, or HZK3CTR-S-E equivalent, key selection criteria include its 2.8 V ±0.4 V zener tolerance, low leakage (<5 µA at 0.5 V), LLD surface-mount package compatibility, and thermal stability in compact DC-DC feedback paths.

Technical Context

This device functions as a two-terminal shunt voltage regulator, maintaining stable output by conducting reverse current above its specified breakdown threshold. Its epitaxial planar construction ensures tight V_Z distribution and low temperature coefficient (–2.5 mV/°C typical for 2.8 V grade).

The HZK3CTR-S-E is characterized under DC test conditions at 25°C, with zener voltage guaranteed between 2.8 V and 3.2 V at 5 mA, dynamic resistance measured at 100 Ω max, and reverse current limited to ≤5 µA at 0.5 V - confirming suitability for low-noise, low-current biasing applications.

Key Specifications

Pinout & Package

The HZK3CTR-S-E uses the LLD (Leadless Low-profile Diode) package: cylindrical, 1.4 mm diameter × 0.35 mm height, cathode-band marked, mass ≈ 0.027 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage regulation applications.

Compared with MM3Z2V7T1G and BZX55C2V7, the HZK3CTR-S-E offers tighter 2.8–3.2 V grading (Grade B), lower dynamic impedance, and superior thermal performance in a miniature LLD package - making it optimal for space-constrained, high-reliability industrial sensing and reset applications.

Availability

HZK3CTR-S-E is available at Aetrix Electronics and suitable for industrial sensor interfaces, microcontroller reset supervision, and low-power IoT reference circuits requiring stable component supply and long-term manufacturability.

Supply support for HZK3CTR-S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.

The HZK Series was developed by Renesas Electronics as a family of precision silicon Zener diodes targeting high-stability DC voltage references in compact, high-density power management and signal conditioning circuits.

FAQ

What is the exact zener voltage range for HZK3CTR-S-E?

The HZK3CTR-S-E has a guaranteed zener voltage range of 2.8 V to 3.2 V at 5 mA test current, corresponding to Grade B specification per the Renesas HZK Series datasheet Rev.3.00. This tolerance band ensures consistent regulation behavior across production lots and supports accurate design margining for 3.3 V system rails. The HZK3CTR-S-E achieves this via epitaxial planar process control and DC-tested binning.

Is HZK3CTR-S-E compatible with reflow soldering processes?

Yes, the HZK3CTR-S-E in its LLD package is qualified for standard Pb-free reflow soldering profiles, including JEDEC J-STD-020-compliant peak temperatures up to 260°C. Its glass-passivated silicon die and metallized end caps withstand thermal cycling without parameter shift. The HZK3CTR-S-E's 0.35 mm profile also prevents tombstoning during automated placement, supporting high-yield SMT assembly.

Does HZK3CTR-S-E meet RoHS and REACH requirements?

Yes, the HZK3CTR-S-E complies with EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, as confirmed by Renesas Electronics' material declarations. Lead content is below 1000 ppm, and all restricted substances are absent above threshold limits. The HZK3CTR-S-E carries full substance compliance documentation available upon request from Aetrix Electronics or Renesas directly.

What is the temperature coefficient of HZK3CTR-S-E?

The HZK3CTR-S-E exhibits a typical zener voltage temperature coefficient of –2.5 mV/°C near 25°C, derived from its 2.8–3.2 V Grade B rating and position on the V_Z vs. temperature curve in the HZK Series datasheet. This negative coefficient means output voltage decreases linearly with rising ambient temperature - a critical factor when designing overtemperature compensation in precision references using the HZK3CTR-S-E.

Can HZK3CTR-S-E replace older NEC-branded HZK3B parts?

Yes, the HZK3CTR-S-E is the direct successor to the NEC HZK3B, retaining identical electrical specifications, LLD package dimensions, and marking scheme. Following the April 2010 merger, Renesas Electronics assumed full responsibility for the HZK Series, and the HZK3CTR-S-E is manufactured to the same Rev.3.00 specification. Designers may substitute HZK3CTR-S-E for HZK3B without layout or performance impact.