Renesas HZK4ATR-S-E

Overview

HZK4ATR-S-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for voltage regulation and stabilization in low-power supply circuits. It delivers a nominal zener voltage of 3.6 V (midpoint of 3.4–3.8 V range), with 5 mA test current, 1.0 V maximum reverse voltage at 5 µA leakage, and 100 Ω dynamic impedance - enabling precise reference generation in compact DC-DC feedback paths and sensor biasing networks.

For engineers reviewing the HZK4ATR-S-E datasheet, HZK4ATR-S-E pinout, HZK4ATR-S-E application, or HZK4ATR-S-E equivalent, key selection criteria include its LLD surface-mount package, ±5% zener voltage tolerance (Grade A), 500 mW power dissipation, and suitability for industrial-grade stabilized power supplies operating up to 175°C junction temperature.

Technical Context

The HZK4ATR-S-E operates as a two-terminal voltage reference device using silicon epitaxial planar junction technology, optimized for stable breakdown behavior under DC bias. Its zener voltage is specified at 5 mA test current with 100 Ω dynamic resistance, indicating tight regulation across load variations in low-current applications.

Designed for surface-mount assembly on PCBs, it features low leakage (≤5 µA at VR = 1.0 V) and a negative temperature coefficient of approximately –2.5 mV/°C near 3.6 V, consistent with low-voltage Zener devices. The LLD package supports high-density layouts and automated placement without lead-forming.

Key Specifications

Pinout & Package

Package: LLD - miniature cylindrical leadless surface-mount package with cathode band marking; dimensions: φ1.4 ± 0.1 mm, height ~0.35 mm (typical); mass: 0.027 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with BZX55C3V6 and MMSZ4685, the HZK4ATR-S-E offers identical voltage regulation performance in a smaller LLD package with full 500 mW rating - making it optimal for space-constrained industrial modules requiring maximum thermal headroom and SMT scalability.

Availability

HZK4ATR-S-E is available at Aetrix Electronics and suitable for industrial sensor biasing, low-power microcontroller reset circuits, and USB peripheral power regulation requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for HZK4ATR-S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.

The HZK Series was developed specifically for high-reliability, low-power voltage stabilization in industrial-grade power supplies - emphasizing low leakage, tight zener tolerance, and extended temperature operation.

FAQ

What is the exact zener voltage range specified for HZK4ATR-S-E?

The HZK4ATR-S-E has a guaranteed zener voltage range of 3.4 V to 3.8 V at 5 mA test current, corresponding to Grade A tolerance per the Renesas HZK Series datasheet Rev.3.00. This 3.6 V nominal rating with ±0.2 V spread ensures compatibility with 3.3 V system rails where margin for supply variation and temperature drift is required. The HZK4ATR-S-E achieves this specification using silicon epitaxial planar junction technology.

Is HZK4ATR-S-E RoHS compliant and halogen-free?

Yes, HZK4ATR-S-E meets EU RoHS Directive requirements and is manufactured as a lead-free, halogen-free device per Renesas Electronics' environmental compliance policy. The LLD package uses matte tin termination and complies with J-STD-020 moisture sensitivity level (MSL) 1 for unlimited floor life at ≤30°C/60% RH. Full material declarations and test reports for HZK4ATR-S-E are available upon request from Aetrix Electronics.

What is the thermal derating behavior of HZK4ATR-S-E above 25°C ambient?

HZK4ATR-S-E exhibits linear thermal derating from its 500 mW maximum power dissipation at 25°C ambient, with zero dissipation reached at approximately 150°C ambient on a standard FR-4 PCB (per Fig.3 in the datasheet). Derating slope is ~3.3 mW/°C, meaning usable power drops to ~330 mW at 75°C ambient. This behavior is critical when deploying HZK4ATR-S-E in enclosed industrial enclosures without forced airflow.

Can HZK4ATR-S-E be used in place of HZK4A in existing designs?

Yes, HZK4ATR-S-E is the tape-and-reel packaging variant of the HZK4A device, sharing identical electrical specifications, LLD package dimensions, and marking (Yellow Green/Orange/Pink bands). The "TR-S-E" suffix denotes embossed carrier tape, 8 mm width, 4 mm pitch, EIA-481 compliant - no circuit or layout changes are needed when substituting HZK4ATR-S-E for HZK4A in SMT production. The HZK4ATR-S-E retains all performance characteristics of the base HZK4A part.

What is the zener voltage temperature coefficient of HZK4ATR-S-E?

The HZK4ATR-S-E has a negative temperature coefficient of approximately –2.5 mV/°C near its 3.6 V operating point, as confirmed by Figure 2 in the Renesas HZK Series datasheet. This means its zener voltage decreases by ~0.25% per 10°C rise in junction temperature. Designers must account for this drift in precision reference applications; the HZK4ATR-S-E is best suited for systems where ambient temperature remains stable or where compensation is applied externally.