Renesas HZK6ATL-S-E

Overview

HZK6ATL-S-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage regulation in stabilized power supply circuits. It delivers a nominal zener voltage of 5.5 V (Grade B), with dynamic resistance of 40 Ω at 5 mA, maximum power dissipation of 500 mW, and operates across –55°C to +175°C storage temperature range. It is used in low-power reference and biasing applications requiring stable DC voltage under varying load conditions.

For engineers reviewing the HZK6ATL-S-E datasheet, HZK6ATL-S-E pinout, HZK6ATL-S-E application, or HZK6ATL-S-E equivalent, key selection criteria include zener voltage tolerance (±0.5 V), low leakage current (≤5 µA at 0.5 V), thermal coefficient behavior, surface-mount LLD package compatibility, and compliance with Renesas' Standard quality grade for industrial and consumer electronics.

Technical Context

The HZK6ATL-S-E employs a silicon epitaxial planar junction structure optimized for low zener impedance and tight voltage regulation at low test currents. Its design targets stable operation under DC-biased conditions with minimal temperature-induced drift-exhibiting a zener voltage temperature coefficient of approximately +2.0 mV/°C near 5.5 V.

This device functions exclusively as a two-terminal shunt voltage reference, requiring an external series current-limiting resistor. It does not integrate transient suppression, ESD protection, or active regulation circuitry-its performance is defined solely by DC zener characteristics per Rev.3.00 (May 14, 2003) specification.

Key Specifications

Pinout & Package

Package: LLD (Leadless Low-profile Diode), JEITA unregistered, 0.027 g mass, 1.4 ± 0.1 mm diameter, 0.35 mm typical height. Suited for automated high-speed surface mounting on standard PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with BZX55C5V6 and MMSZ5232B, the HZK6ATL-S-E offers superior high-temperature resilience (175°C T_j), exact Grade B voltage binning (5.5–6.0 V), and LLD package compatibility with fine-pitch automated placement-making it optimal for next-gen compact industrial and automotive-adjacent control modules.

Availability

HZK6ATL-S-E is available at Aetrix Electronics and suitable for industrial sensor signal conditioning, consumer audio bias supply, USB-C power negotiation reference, and programmable logic controller input protection requiring stable component supply and long-term obsolescence management.

Supply support for HZK6ATL-S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 via merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and discrete power devices.

The HZK Series was developed by Renesas as a family of precision silicon Zener diodes targeting stabilized DC power supply applications in Standard-grade industrial and consumer equipment-emphasizing low leakage, consistent dynamic impedance, and robust thermal performance.

FAQ

What is the exact zener voltage range specified for HZK6ATL-S-E?

The HZK6ATL-S-E is a Grade B device in the HZK6 series, with a guaranteed zener voltage range of 5.5 V to 6.0 V at I_Z = 5 mA and T_a = 25°C, as documented in the Rev.3.00 (May 14, 2003) datasheet, page 2. This binning enables precise matching to 5 V system rails without additional calibration. The HZK6ATL-S-E does not support adjustable or programmable voltage settings-it is a fixed-voltage, two-terminal shunt regulator.

Does HZK6ATL-S-E support transient voltage suppression or ESD protection?

No, the HZK6ATL-S-E is a dedicated DC zener reference diode and provides no transient suppression capability. Its electrical characteristics-such as reverse current and dynamic resistance-are specified under steady-state DC conditions only. For surge or ESD protection, a separate TVS diode (e.g., PESD5V0S1BA) must be used upstream. The HZK6ATL-S-E itself is not rated for peak pulse power or clamping voltage under fast transients.

What is the thermal coefficient behavior of HZK6ATL-S-E near its operating voltage?

Per Figure 2 on page 5 of the Rev.3.00 datasheet, the HZK6ATL-S-E exhibits a positive zener voltage temperature coefficient of approximately +2.0 mV/°C at 5.5 V. This means its regulated voltage increases by ~2 mV per degree Celsius rise in junction temperature. Designers must account for this drift in precision reference applications-especially those operating beyond 25°C ambient-by including thermal compensation or selecting tighter-tolerance downstream components.

Is the LLD package of HZK6ATL-S-E compatible with standard reflow profiles?

Yes, the LLD package of HZK6ATL-S-E is qualified for standard lead-free reflow soldering per J-STD-020. Its glass-epoxy PCB mounting (per page 6) and 0.35 mm profile allow compatibility with industry-standard stencil thicknesses and convection reflow profiles up to 260°C peak. No special pre-bake or moisture sensitivity handling is required-the device is rated MSL-1 and may be stored indefinitely at room temperature prior to assembly.

Can HZK6ATL-S-E be used in place of a 5.6 V Zener like BZX55C5V6?

The HZK6ATL-S-E (5.5–6.0 V) and BZX55C5V6 (5.32–5.88 V, ±5%) overlap in nominal voltage but differ in tolerance method, package, and thermal rating. While functionally substitutable in non-critical biasing roles, the HZK6ATL-S-E offers tighter absolute binning and 175°C junction rating versus BZX55C5V6's 200°C but DO-35 through-hole form. Direct substitution requires verifying PCB pad layout, thermal relief, and whether ±0.5 V absolute tolerance meets system accuracy requirements. The HZK6ATL-S-E is not a drop-in replacement due to differing footprints.