Renesas HZK6CLTL-S-E

Overview

HZK6CLTL-S-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for voltage regulation and stabilization in low-power supply circuits. It delivers a nominal zener voltage of 5.8–6.4 V at 5 mA test current, with dynamic resistance of 40 Ω max, 500 mW power dissipation, and operates within –55°C to +175°C storage temperature range. It is used in precision reference circuits for industrial sensors and analog front-ends.

For engineers reviewing the HZK6CLTL-S-E datasheet, HZK6CLTL-S-E pinout, HZK6CLTL-S-E application, or HZK6CLTL-S-E equivalent, key selection criteria include zener voltage tolerance (±5% Grade C), low leakage (<5 µA at 0.5 V), thermal coefficient (–2.5 mV/°C typical), surface-mount LLD package compatibility, and compliance with Renesas Standard-grade quality for industrial equipment.

Technical Context

The HZK6CLTL-S-E employs a silicon epitaxial planar junction structure optimized for stable reverse breakdown behavior under DC bias. Its zener voltage is specified at 5 mA test current with tight ±5% tolerance (Grade C), and it exhibits low dynamic impedance (≤40 Ω) to maintain regulation accuracy under load variation.

Thermal performance is characterized by a negative temperature coefficient of approximately –2.5 mV/°C, enabling predictable drift compensation in reference designs. The device is rated for 500 mW power dissipation on PCB and supports operation up to 175°C junction temperature, making it suitable for thermally constrained industrial environments.

Key Specifications

Pinout & Package

The HZK6CLTL-S-E is housed in the LLD (Leadless Low-profile Diode) surface-mount package - a 2-terminal, cathode-banded, rectangular plastic package measuring 1.4 mm × 1.35 mm × 0.35 mm (typ.), with 0.027 g mass and JEITA-unspecified footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with MMBZ5231B-7-F and BZX84-C6V2, the HZK6CLTL-S-E provides higher power dissipation (500 mW vs. 200/300 mW), tighter thermal stability (–2.5 mV/°C), and Renesas Standard-grade qualification - making it preferable for thermally demanding industrial reference designs requiring long-term regulation accuracy.

Availability

HZK6CLTL-S-E is available at Aetrix Electronics and suitable for industrial sensor reference, low-power analog front-end, and embedded microcontroller reset circuits requiring stable component supply, long-lifecycle support, and traceable sourcing for production programs.

Supply support for HZK6CLTL-S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and infrastructure markets.

The HZK Series was developed by Renesas Electronics as a family of precision silicon Zener diodes targeting stabilized power supply and voltage reference applications in industrial electronics, with emphasis on low leakage, tight tolerance, and robust thermal performance.

FAQ

What is the exact zener voltage range for HZK6CLTL-S-E?

The HZK6CLTL-S-E has a guaranteed zener voltage range of 5.8 V to 6.4 V at a test current of 5 mA, corresponding to Grade C tolerance per the Renesas HZK Series datasheet Rev.3.00. This specification is measured under DC conditions at 25°C ambient and remains valid across its operating temperature range when derated per the power dissipation curve.

Is HZK6CLTL-S-E RoHS compliant?

Yes, HZK6CLTL-S-E complies with the EU RoHS Directive as confirmed by Renesas Electronics' environmental compliance documentation. The device contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE) above threshold limits, and is marked accordingly in Renesas' material declarations.

What does the "S-E" suffix in HZK6CLTL-S-E indicate?

The "S-E" suffix in HZK6CLTL-S-E denotes Renesas' internal packaging and marking variant: "S" indicates tape-and-reel packaging per EIA-481 standard, and "E" specifies the color-coded marking format (Yellow Green cathode band, Verdure second band, Light Blue third band) per the HZK Series Mark Color Code table on page 4 of the datasheet.

Can HZK6CLTL-S-E replace HZK6B in an existing design?

Yes, HZK6CLTL-S-E is functionally identical to HZK6B in electrical specifications (5.5–6.0 V V_Z, Grade B), but offers tighter Grade C tolerance (5.8–6.4 V) and uses the LLD package instead of older axial or mini-mold variants. No circuit changes are needed, though PCB land pattern must match the 1.4 mm × 1.35 mm LLD footprint.

What is the maximum allowable reverse voltage before breakdown for HZK6CLTL-S-E?

The HZK6CLTL-S-E begins controlled reverse breakdown at its specified zener voltage (5.8–6.4 V). Its absolute maximum reverse voltage is not defined separately - operation above V_Z is normal and intended, provided power dissipation remains within 500 mW and junction temperature stays ≤175°C. Sustained operation significantly above V_Z without current limiting will cause thermal runaway.