Renesas HZK7BLTR-S-E

Overview

HZK7BLTR-S-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for voltage regulation and stabilization in low-power supply circuits, with a nominal zener voltage of 6.7–7.3 V (Grade B), 400 mW power dissipation, 60 Ω dynamic resistance at 0.5 mA, and operation up to 175°C junction temperature - used in office equipment power rails and sensor reference circuits.

For engineers reviewing the HZK7BLTR-S-E datasheet, HZK7BLTR-S-E pinout, HZK7BLTR-S-E application, or HZK7BLTR-S-E equivalent, this page delivers verified electrical specs, LLD package dimensions, thermal derating behavior, zener voltage temperature coefficient (−2 mV/°C), and direct alternatives for precision low-voltage stabilization.

Technical Context

The HZK7BLTR-S-E operates as a two-terminal shunt regulator, maintaining stable output voltage across varying load currents via controlled reverse-bias breakdown. Its low leakage current (<1 µA at VR = 3.5 V) and tight zener voltage tolerance (±0.3 V at 0.5 mA) support accurate biasing in analog front-ends and reference dividers.

Designed for surface-mount assembly on standard PCBs, the device uses an LLD package with cathode-anode pin arrangement and exhibits predictable thermal drift (−2 mV/°C), enabling compensation in temperature-sensitive applications without external circuitry.

Key Specifications

Pinout & Package

Package: LLD (leadless low-profile diode), JEITA-compliant, 0.027 g mass, 1.4 mm diameter, 3.5 mm height, glass epoxy PCB mountable.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar zener diode voltage regulation applications.

Compared with HZK7BLTR-S-E, BZX55C6V8-TR offers higher power margin but coarser regulation, while MMSZ5233BT1G delivers tighter voltage control at reduced thermal robustness - choose HZK7BLTR-S-E for balanced precision, thermal resilience, and LLD-mount compatibility in space-constrained industrial PCBs.

Availability

HZK7BLTR-S-E is available at Aetrix Electronics and suitable for industrial sensor conditioning, office equipment power monitoring, and embedded microcontroller reset circuits requiring stable component supply, long-term lifecycle continuity, and RoHS-compliant sourcing.

Supply support for HZK7BLTR-S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices, with global design centers and manufacturing facilities supporting automotive, industrial, and consumer markets.

The HZK-L Series is part of Renesas' discrete voltage reference portfolio, engineered specifically for stabilized power supply applications in standard-grade industrial and office equipment where reliability, thermal stability, and surface-mount compatibility are essential.

FAQ

What is the exact zener voltage range specified for HZK7BLTR-S-E?

The HZK7BLTR-S-E has a guaranteed zener voltage range of 6.7 V to 7.3 V at test current I_Z = 0.5 mA, corresponding to Grade B tolerance per the Renesas HZK-L Series datasheet Rev.3.00. This range ensures compatibility with 6.8 V nominal supply rails and allows for predictable headroom in clamp and reference designs. The HZK7BLTR-S-E maintains this specification across its full operating temperature range when used within rated power limits.

Does HZK7BLTR-S-E have a documented temperature coefficient, and what is its value?

Yes, the HZK7BLTR-S-E has a documented zener voltage temperature coefficient (γ_Z) of −2 mV/°C, as shown in Figure 2 of the official Renesas datasheet. This negative linear drift enables straightforward first-order thermal compensation in reference circuits. The HZK7BLTR-S-E's coefficient is consistent across its operating range and supports stable performance in environments where ambient temperature varies between −55°C and +125°C.

What is the maximum reverse leakage current for HZK7BLTR-S-E, and under what condition is it measured?

The maximum reverse leakage current (I_R) for HZK7BLTR-S-E is 1 µA, measured at reverse voltage V_R = 3.5 V and ambient temperature T_a = 25°C. This low leakage ensures minimal quiescent power draw in always-on bias networks and enhances accuracy in high-impedance reference dividers. The HZK7BLTR-S-E maintains leakage below 5 µA even at 85°C ambient, supporting energy-efficient designs.

Is HZK7BLTR-S-E compatible with lead-free reflow soldering processes?

Yes, the HZK7BLTR-S-E's LLD package and internal construction are qualified for standard lead-free reflow profiles, including peak temperatures up to 260°C for 10 seconds, per J-STD-020. Renesas specifies the device as RoHS-compliant and suitable for Pb-free assembly without derating. The HZK7BLTR-S-E's glass passivation and epitaxial structure ensure reliability under repeated thermal cycling typical in modern SMT lines.

How does the power dissipation of HZK7BLTR-S-E change with ambient temperature?

HZK7BLTR-S-E's power dissipation derates linearly above 25°C ambient, reaching 0 mW at 150°C per the "Power Dissipation vs. Ambient Temperature" curve (Figure 3). At 70°C ambient, its usable P_d is approximately 280 mW. This derating behavior is critical for thermal design - the HZK7BLTR-S-E must be placed away from heat sources and on adequately copper-poured pads to maintain safe junction temperature below 175°C.