Renesas HZK9CTR-S-E

Overview

HZK9CTR-S-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for voltage regulation and stabilization in low-power DC supply rails. It delivers a nominal zener voltage of 8.3–9.1 V (Grade B), with 500 mW power dissipation, ≤20 Ω dynamic impedance at 5 mA, and operates across –55°C to +175°C ambient range. It is used in precision reference circuits for industrial sensors and analog front-ends.

For engineers reviewing the HZK9CTR-S-E datasheet, HZK9CTR-S-E pinout, HZK9CTR-S-E application, or HZK9CTR-S-E equivalent, key selection criteria include zener voltage tolerance (±5% Grade B), low leakage (<1 µA at 0.5 V), thermal coefficient (≈+4.5 mV/°C), LLD surface-mount package compatibility, and compliance with Renesas Standard-grade reliability for non-safety-critical embedded systems.

Technical Context

The HZK9CTR-S-E employs a planar epitaxial junction structure optimized for stable reverse-breakdown behavior under DC bias. Its zener voltage is specified at 5 mA test current with tight grading (Grade B: 8.3–9.1 V), and its dynamic resistance remains ≤20 Ω across that condition - critical for low-noise reference stability.

Thermal performance is defined by a junction temperature limit of 175°C and a storage range of –55°C to +175°C. The device exhibits a positive temperature coefficient (~+4.5 mV/°C) typical of mid-voltage Zeners (7–10 V), enabling predictable drift compensation in temperature-sensitive analog designs.

Key Specifications

Pinout & Package

Package: LLD (leadless low-profile diode), circular surface-mount package with cathode band marking; dimensions: φ1.4 ±0.1 mm, height ≈0.35 mm (typical); mass: 0.027 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with BZX55-C8V2 and MMSZ4689, the HZK9CTR-S-E offers superior thermal capability (175°C T_j), tighter process control for industrial-grade consistency, and LLD package compatibility with ultra-compact layouts - making it optimal for space-constrained, high-reliability embedded systems.

Availability

HZK9CTR-S-E is available at Aetrix Electronics and suitable for industrial sensor reference, ADC voltage reference, and power supply feedback applications requiring stable component supply, long-term manufacturability, and RoHS-compliant sourcing.

Supply support for HZK9CTR-S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices, with global R&D and manufacturing infrastructure.

The HZK Series was developed by Renesas Electronics as a family of precision silicon Zener diodes targeting stabilized DC power supply and voltage reference functions in industrial and commercial equipment.

FAQ

What is the zener voltage tolerance for HZK9CTR-S-E?

The HZK9CTR-S-E is graded as Type B, with a zener voltage range of 8.3 V to 9.1 V at 5 mA test current - corresponding to ±5% tolerance around the nominal 8.7 V center point. This grading is confirmed in the Renesas HZK Series datasheet Rev.3.00, page 2, and applies directly to the HZK9CTR-S-E variant. The tolerance ensures predictable regulation in production-calibrated circuits without post-assembly adjustment.

Is HZK9CTR-S-E RoHS compliant?

Yes, HZK9CTR-S-E meets EU RoHS Directive requirements as confirmed by Renesas Electronics' environmental compliance documentation. The device contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits. RoHS status is maintained per Renesas' material declarations and applies to all units shipped after January 2006, including current HZK9CTR-S-E inventory at Aetrix Electronics.

What is the maximum reverse leakage current for HZK9CTR-S-E?

The maximum reverse leakage current for HZK9CTR-S-E is 1 µA at V_R = 0.5 V, as specified in the Electrical Characteristics table (page 2 of Rev.3.00). This value is measured under DC conditions and verified per Renesas test methodology. Low leakage ensures minimal error contribution in high-impedance reference networks, such as those used with precision op-amps or SAR ADCs.

Can HZK9CTR-S-E replace HZK9B in existing designs?

Yes, HZK9CTR-S-E is a direct replacement for HZK9B - both share identical zener voltage grading (8.3–9.1 V), LLD package, pinout, and electrical specifications. The "-S-E" suffix denotes Renesas' updated packaging and traceability coding per post-merger branding (Renesas Electronics Corporation, effective April 2010), with no functional or parametric change from the original HZK9B designation.

What is the thermal resistance junction-to-ambient for HZK9CTR-S-E?

Renesas does not publish a specific R_θJA value for HZK9CTR-S-E in the HZK Series datasheet. However, the device's 500 mW power rating is validated on a standard 15 × 20 × 1.6 mm glass-epoxy PCB (page 6), implying an effective R_θJA of approximately 250°C/W under those conditions. Derating curves (Fig.3, page 5) confirm linear power reduction above 50°C ambient, supporting thermal design using the published P_d vs. T_a graph.