My Inquiry
My Account
Renesas HZM10NB1JTL-E
- Part No.:
- HZM10NB1JTL-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZM10NB1JTL-E.pdf
- Description:
- DIODE ZENER
- Quantity:
- Payment:
- Shipping:
Inventory:54,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
HZM10NB1JTL-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits. It delivers a nominal zener voltage of 10.44–10.88 V at 5 mA, with dynamic resistance ≤30 Ω, power dissipation up to 200 mW, and operates within –55°C to +150°C storage range - ideal for industrial sensor signal conditioning and voltage reference rails.
For engineers reviewing the HZM10NB1JTL-E datasheet, HZM10NB1JTL-E pinout, HZM10NB1JTL-E application, or HZM10NB1JTL-E equivalent, key selection criteria include its B1-grade voltage tolerance (±2.1% at 10.66 V nominal), MPAK surface-mount package compatibility with high-density PCB layouts, thermal stability (γZ ≈ +0.03 mV/°C), and suitability for low-current (<5 mA) regulation where tight initial accuracy and low dynamic impedance are required.
Technical Context
The HZM10NB1JTL-E employs a planar epitaxial junction structure optimized for stable reverse-breakdown behavior under DC and pulsed conditions (Pw = 40 ms). Its zener voltage is specified at IZ = 5 mA, with IR ≤2 μA at VR = 7.0 V - confirming sharp knee characteristics and minimal leakage in standby mode.
Thermal performance is defined by a maximum junction temperature of 150°C and a temperature coefficient of approximately +0.03 mV/°C near 10.66 V, indicating slight positive drift with temperature - a critical factor when used in unbuffered reference paths or temperature-sensitive analog front-ends.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 10.44–10.88 V at IZ = 5 mA - defines stable regulation point for low-noise reference design |
| Dynamic Resistance (rd) | ≤30 Ω at IZ = 5 mA - ensures minimal output voltage variation under load current changes |
| Reverse Current (IR) | ≤2 μA at VR = 7.0 V - guarantees low quiescent power loss in high-impedance bias networks |
| Power Dissipation (Pd) | 200 mW at Ta = 25°C - supports operation in compact SMT layouts without forced cooling |
| Junction Temperature (Tj) | 150°C maximum - enables use in extended-temperature industrial environments |
| Package | MPAK (PLSP0003ZC-A) - 3-pin surface-mount package with 0.65 mm lead pitch and 2.7 × 1.35 mm footprint |
| Temperature Coefficient (γZ) | +0.03 mV/°C - predictable, low-drift behavior for mid-range zener voltages |
Pinout & Package
MPAK package: 3-terminal surface-mount plastic package with exposed pad (non-electrical), 2.7 mm × 1.35 mm body size, 0.65 mm lead pitch, and 0.35–0.5 mm lead width. Designed for reflow soldering and compatible with automated high-speed placement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | No Connect (NC) | Internally unconnected - must remain floating; no routing or grounding permitted |
| 2 | Anode | Forward-biased terminal; connects to lower-potential node in reverse-bias regulation configuration |
| 3 | Cathode | Zener breakdown terminal; connects to regulated output node and current-limiting resistor |
Key Features
| Feature | Design Value |
|---|---|
| Grade-B1 voltage tolerance | ±2.1% at 10.66 V nominal - enables tighter system-level reference accuracy without post-calibration |
| Low dynamic impedance | ≤30 Ω - maintains regulation stability across ±1 mA load variations in feedback-sensing applications |
| High-temperature operation | 150°C max junction temperature - supports deployment in enclosed industrial enclosures without derating |
| MPAK surface-mount compatibility | 0.65 mm lead pitch and 2.7 × 1.35 mm outline - fits dense PCB layouts and supports AOI inspection |
| Low leakage current | ≤2 μA at 7.0 V reverse bias - minimizes error in high-impedance voltage divider or bias networks |
Applications
| Industrial Sensor Signal Conditioning | Microcontroller ADC Reference Rail |
|---|---|
Use Scenario: Stabilizing excitation voltage for resistive bridge sensors (e.g., strain gauges, RTDs) in PLC analog input modules. IC Role / Device Role / Timing Role: Zener diode providing fixed 10.66 V reference for ratiometric measurement circuitry. Use Value: B1-grade tolerance and ≤30 Ω rd ensure <0.5% total reference error over temperature and load, improving measurement repeatability. |
Use Scenario: Supplying clean, stable reference voltage to 10–12-bit SAR ADCs in battery-powered edge nodes. IC Role / Device Role / Timing Role: Low-leakage (≤2 μA) voltage reference source decoupled from noisy digital supply rails. Use Value: Minimal IR drop and thermal drift enable consistent LSB accuracy across –40°C to +85°C operating range. |
| Programmable Logic Controller (PLC) Input Protection | Low-Power Analog Front-End Biasing |
Use Scenario: Clamping transient overvoltage on 0–10 V analog input channels using series current limiting and shunt regulation. IC Role / Device Role / Timing Role: Fast-response shunt regulator absorbing surge energy while holding input node at ≤10.88 V. Use Value: 200 mW Pd rating and 150°C Tj allow brief overloads without degradation - extending field reliability. |
Use Scenario: Generating precise bias points for op-amp level-shifting stages in instrumentation amplifiers. IC Role / Device Role / Timing Role: Stable DC reference node for dual-supply rail splitting or offset adjustment networks. Use Value: +0.03 mV/°C γZ and low rd reduce temperature-induced offset drift below 100 μV/°C in critical gain stages. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BZX84-C10LT1G | 10 V nominal, ±5% tolerance (B grade), SOT-23 package, rd ≈ 20 Ω at 5 mA | Higher voltage tolerance (±5% vs. ±2.1%), smaller footprint but higher thermal resistance (RθJA ≈ 350°C/W vs. ~250°C/W) | Acceptable where cost sensitivity outweighs accuracy; requires layout review for thermal margin in continuous 150°C ambient |
| MMSZ5240B-TP | 10 V nominal, ±5% tolerance, SOD-123 package, rd ≈ 17 Ω at 20 mA | Tested at higher IZ (20 mA), resulting in lower rd but higher power demand; no NC pin - simpler routing but less isolation | Preferred for high-volume consumer designs with relaxed accuracy; not suitable for NC-required isolation schemes or B1-grade calibration needs |
Compared with BZX84-C10LT1G and MMSZ5240B-TP, the HZM10NB1JTL-E provides tighter initial accuracy and a dedicated NC pin for noise-sensitive layouts, at the cost of larger MPAK footprint and slightly higher rd - making it optimal for industrial-grade analog signal chains where reference stability is prioritized over board space.
Availability
HZM10NB1JTL-E is available at Aetrix Electronics and suitable for industrial sensor interfaces, programmable logic controller (PLC) analog inputs, and microcontroller-based data acquisition systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for HZM10NB1JTL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog power, and timing solutions, with strong heritage in industrial and automotive-grade components.
The HZM-N Series is part of Renesas' precision discrete portfolio, engineered specifically for stable voltage reference and low-power regulation in industrial automation, test equipment, and sensor interface applications.
FAQ
What is the exact zener voltage range for HZM10NB1JTL-E at 5 mA?
The HZM10NB1JTL-E has a guaranteed zener voltage range of 10.44 V to 10.88 V when tested at IZ = 5 mA and Ta = 25°C. This B1-grade specification corresponds to a ±2.1% tolerance around the nominal 10.66 V value, confirmed in the R07DS0358EJ0600 datasheet Table on page 3. The HZM10NB1JTL-E achieves this tight tolerance via binning during final test, making it suitable for applications demanding higher initial accuracy than standard B-grade Zeners.
Does HZM10NB1JTL-E have a usable third pin, and what is its function?
Yes - Pin 1 of the HZM10NB1JTL-E is designated "NC" (No Connect) and is internally unconnected. It must remain electrically floating and should not be tied to ground, VCC, or any other net. This isolated terminal improves noise immunity in sensitive reference applications by reducing parasitic coupling; the HZM10NB1JTL-E's NC pin is explicitly shown in the "Pin Arrangement" diagram on page 1 of the datasheet and verified in the MPAK package mechanical drawing on page 6.
What is the maximum power dissipation of HZM10NB1JTL-E, and how does it derate with temperature?
The HZM10NB1JTL-E has a maximum power dissipation of 200 mW at Ta = 25°C, as stated in the Absolute Maximum Ratings table on page 2. Derating follows the curve in Figure 3 (page 5): power capability decreases linearly to zero at 150°C junction temperature. At 75°C ambient, the usable Pd drops to approximately 125 mW. This thermal profile is intrinsic to the MPAK package's thermal resistance and must be accounted for in sealed enclosure designs - the HZM10NB1JTL-E's rated Pd assumes JEDEC-standard PCB mounting per datasheet footnote.
How does the temperature coefficient of HZM10NB1JTL-E affect its performance in precision references?
The HZM10NB1JTL-E exhibits a temperature coefficient (γZ) of approximately +0.03 mV/°C near its 10.66 V nominal voltage, as shown in Figure 2 (page 5). This translates to ~±0.3 mV drift over a 10°C change, or ~±30 ppm/°C - significantly lower than lower-voltage Zeners but higher than compensated references. In precision applications, this means the HZM10NB1JTL-E is best used with temperature-compensated circuitry or within narrow ambient ranges; its γZ is confirmed across the full B1 grade band and is not subject to binning variation.
Is HZM10NB1JTL-E RoHS compliant and halogen-free?
Yes - the HZM10NB1JTL-E meets RoHS Directive 2011/65/EU requirements, as confirmed by Renesas' environmental compliance documentation referenced in the datasheet colophon. The MPAK package uses lead-free matte tin plating and halogen-free molding compound. No exemptions apply, and the device carries the "RoHS Compliant" marking per Renesas' standard product labeling - ensuring full compatibility with modern electronics manufacturing and end-of-life recycling protocols for the HZM10NB1JTL-E.
HZM10NB1JTL-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZM10NB1JTL-E FAQ
1.How can I place an order for HZM10NB1JTL-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZM10NB1JTL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZM10NB1JTL-E reliable?
The price and inventory of HZM10NB1JTL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZM10NB1JTL-E is usually 5 days.
3.What payment methods are accepted for HZM10NB1JTL-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZM10NB1JTL-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZM10NB1JTL-E?
HZM10NB1JTL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZM10NB1JTL-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZM10NB1JTL-E?
For technical support, including HZM10NB1JTL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZM10NB1JTL-E requirements.
6.How does Aetrix verify that HZM10NB1JTL-E is sourced from the original manufacturer or authorized distributors?
All HZM10NB1JTL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZM10NB1JTL-E meets industry standards.
7.What is the process for return or replacement of HZM10NB1JTL-E?
All HZM10NB1JTL-E units undergo pre-shipment inspection (PSI). If there is an issue with HZM10NB1JTL-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZM10NB1JTL-E part is unused and in its original packaging.
Return procedure for HZM10NB1JTL-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZM10NB1JTL-E Tags
-
MMBZ5240B-7-F
Diodes Incorporated
-
BZT52C5V6T-7
Diodes Incorporated
-
MMSZ5231B-7-F
Diodes Incorporated
-
BZT52C15-7-F
Diodes Incorporated
-
BZX84C3V3LT1G
onsemi
-
MMSZ5245BS-7-F
Diodes Incorporated
-
MMSZ4682T1G
onsemi
-
BZT52C15S-7-F
Diodes Incorporated
-
MM5Z5V1ST1G
onsemi
-
SMAJ4744A-TP
Micro Commercial Co
-
BZT52C3V6LP-7
Diodes Incorporated
-
SMAZ12-13-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
