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Renesas HZM10NB1TR-E

Part No.:
HZM10NB1TR-E
Manufacturer:
Renesas
Category:
Single Zener Diodes
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixHZM10NB1TR-E.pdf
Description:
DIODE ZENER 10V 200MW 3MPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:18,000

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Product details

Overview

HZM10NB1TR-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits. It delivers a nominal zener voltage of 10.44 V to 10.88 V at 5 mA, with dynamic resistance ≤30 Ω, power dissipation of 200 mW, and operates within –55°C to +150°C storage range. It is commonly used in voltage regulation for sensor signal conditioning and microcontroller reference supplies.

For engineers reviewing the HZM10NB1TR-E datasheet, HZM10NB1TR-E pinout, HZM10NB1TR-E application, or HZM10NB1TR-E equivalent, key selection criteria include zener voltage tolerance (±2.1% at 10.66 V nominal), low dynamic impedance for stable regulation under load variation, MPAK surface-mount package compatibility with high-density PCB layouts, and thermal stability across industrial temperature ranges.

Technical Context

The HZM10NB1TR-E employs a silicon epitaxial planar junction structure optimized for tight zener voltage control and low temperature coefficient (≈+0.045 mV/°C near 10 V). Its design targets stable DC reference generation where low noise and minimal drift are critical.

It operates with reverse-biased conduction only - no forward rectification function - and requires external current limiting. The device is rated for 2 mA minimum test current and 5 mA typical operating current, with absolute maximum junction temperature of 150°C and pulse-tested dynamic resistance specification.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 10.44 V to 10.88 V at IZ = 5 mA - defines precise regulation point for feedback loops and references.
Dynamic Resistance (rd) ≤30 Ω at IZ = 5 mA - ensures minimal output voltage shift under varying load current.
Power Dissipation (Pd) 200 mW at Ta = 25°C - sets maximum continuous DC power handling before thermal derating.
Reverse Current (IR) ≤2 μA at VR = 7.0 V - guarantees low leakage in standby or high-impedance bias networks.
Junction Temperature (Tj) 150°C maximum - supports operation in thermally constrained industrial environments.
Temperature Coefficient (γZ) +0.045 mV/°C (typ.) - enables predictable, low-drift behavior over –25°C to +85°C ambient range.

Pinout & Package

Package: MPAK (JEITA code PLSP0003ZC-A), surface-mount, 3-terminal plastic package with 1.0 mm × 1.3 mm footprint and 0.55 mm terminal pitch. Compatible with standard reflow profiles and high-speed pick-and-place assembly.

Pin/Terminal Circuit Role Design Meaning
1 No Connect (NC) Internally unconnected; must remain floating - no routing or grounding required.
2 Anode Connected to lower-potential side of bias network; current enters here in reverse breakdown mode.
3 Cathode Connected to higher-potential side; zener voltage appears between Cathode and Anode when reverse biased.

Key Features

Feature Design Value
Grade B1 voltage tolerance ±2.1% (10.44–10.88 V) - enables tighter system-level reference accuracy without trimming.
Low dynamic impedance ≤30 Ω - maintains regulation stability under ±1 mA load transients in analog front-ends.
MPAK surface-mount package 0.55 mm pin pitch, 1.0 mm × 1.3 mm body - supports >3000 components/in² board density.
High junction temperature rating 150°C max - allows placement near heat-generating ICs without derating concerns.
Low leakage current ≤2 μA at 7.0 V - preserves battery life and minimizes error in high-impedance voltage dividers.

Applications

Industrial Sensor Reference Microcontroller ADC Reference

Use Scenario: Providing stable 10.66 V reference for 24-bit sigma-delta ADCs in pressure transmitters.

IC Role / Device Role / Timing Role: Precision shunt voltage reference replacing bulkier TL431-based solutions.

Use Value: Enables <±0.05% full-scale linearity over –40°C to +85°C due to low γZ and matched rd.

Use Scenario: Generating internal VREF+ for STM32H7-series MCUs in portable data loggers.

IC Role / Device Role / Timing Role: Low-noise, low-current zener source for internal reference buffer input.

Use Value: Reduces reference path error contribution to <12 ppm/°C while consuming <100 μA quiescent current.

Power Supply Feedback Overvoltage Clamp Protection

Use Scenario: Setting regulation threshold in isolated flyback converter feedback loop using optocoupler-coupled TL431 alternative.

IC Role / Device Role / Timing Role: Primary-side zener clamp defining error amplifier setpoint.

Use Value: Eliminates need for external resistor divider; improves transient response by reducing node capacitance.

Use Scenario: Protecting 12 V rail inputs on CAN transceivers against ESD-induced surges.

IC Role / Device Role / Timing Role: Fast-acting shunt clamp activated above 11.5 V during overvoltage events.

Use Value: Limits clamping energy to <2.2 mJ per event (per 200 mW rating), preventing latch-up in downstream logic.

Equivalent & Alternatives

The following parts are listed as comparable options for similar zener voltage stabilization applications.

Alternative Part Technical Difference Application Difference Selection Advice
BZX84-C10LT1G Zener voltage 9.4–10.6 V (±5%), rd ≤30 Ω, SOT-23 package, Pd = 300 mW Wider VZ tolerance; higher power rating but larger footprint (SOT-23 vs. MPAK) Preferred where higher power margin is needed and board space permits larger package.
MMSZ4689T1G Zener voltage 10.0–11.2 V (±5%), rd ≤30 Ω, SOD-123 package, Pd = 500 mW Looser grading, higher Pd, different thermal profile; not MPAK-compatible Selected when cost sensitivity outweighs voltage precision and ultra-compact layout requirements.

Compared with BZX84-C10LT1G and MMSZ4689T1G, the HZM10NB1TR-E offers superior voltage accuracy (±2.1% vs. ±5%) and smallest footprint (MPAK), making it optimal for space-constrained, high-precision analog designs - though its 200 mW rating requires careful thermal management in sustained-load scenarios.

Availability

HZM10NB1TR-E is available at Aetrix Electronics and suitable for industrial sensor reference, microcontroller ADC reference, and power supply feedback applications requiring stable component supply, consistent grade-B1 binning, and RoHS-compliant MPAK packaging.

Supply support for HZM10NB1TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.

The HZM-N Series is part of Renesas' precision discrete portfolio, engineered specifically for high-stability voltage reference and regulation in compact, thermally efficient surface-mount form factors.

FAQ

What is the exact zener voltage range for HZM10NB1TR-E at 5 mA?

The HZM10NB1TR-E has a guaranteed zener voltage range of 10.44 V to 10.88 V when tested at IZ = 5 mA and Ta = 25°C. This corresponds to Grade B1 binning per Renesas R07DS0358EJ0600 Rev.6.00, with a nominal value of 10.66 V. The tolerance is ±2.1%, tighter than standard Grade B or B2 variants of the same series.

Is pin 1 of HZM10NB1TR-E electrically connected?

No - pin 1 of the HZM10NB1TR-E is designated NC (No Connect) and is internally unconnected. Per the official pin arrangement diagram in the Renesas datasheet, only pins 2 (Anode) and 3 (Cathode) are functional. Pin 1 must remain unconnected on the PCB; routing or grounding it may compromise reliability or violate package mechanical integrity.

What is the maximum reverse current specification for HZM10NB1TR-E?

The maximum reverse current (IR) for HZM10NB1TR-E is 2 μA, measured at VR = 7.0 V and Ta = 25°C. This low leakage supports high-impedance bias networks and extends battery life in always-on monitoring circuits. The value is confirmed in the Electrical Characteristics table on page 3 of the Renesas preliminary datasheet R07DS0358EJ0600.

Can HZM10NB1TR-E be used in place of a TL431 shunt regulator?

The HZM10NB1TR-E cannot directly replace a TL431 because it lacks active feedback, adjustable reference, or current-sinking capability - it is a passive two-terminal zener. However, it serves as a simpler, lower-cost, lower-quiescent alternative where fixed 10.66 V regulation suffices and external current limiting is acceptable. System redesign is required to accommodate its non-adjustable, non-amplified behavior.

What is the thermal derating behavior of HZM10NB1TR-E above 25°C ambient?

HZM10NB1TR-E follows linear thermal derating from 200 mW at Ta = 25°C down to 0 mW at Ta = 150°C, as shown in Figure 3 of the Renesas datasheet. The derating slope is –1.82 mW/°C. At 85°C ambient, maximum allowable power drops to approximately 91 mW - requiring corresponding reduction in bias current to avoid exceeding junction temperature limits.

HZM10NB1TR-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
HZM-N
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
10 V
Tolerance:
±2.1%
Power - Max:
200 mW
Impedance (Max) (Zzt):
30 Ohms
Current - Reverse Leakage @ Vr:
2 µA @ 7 V
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
3-MPAK

HZM10NB1TR-E FAQ

1.How can I place an order for HZM10NB1TR-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HZM10NB1TR-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HZM10NB1TR-E reliable?

The price and inventory of HZM10NB1TR-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZM10NB1TR-E is usually 5 days.

3.What payment methods are accepted for HZM10NB1TR-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZM10NB1TR-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HZM10NB1TR-E?

HZM10NB1TR-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HZM10NB1TR-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HZM10NB1TR-E?

For technical support, including HZM10NB1TR-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZM10NB1TR-E requirements.

6.How does Aetrix verify that HZM10NB1TR-E is sourced from the original manufacturer or authorized distributors?

All HZM10NB1TR-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZM10NB1TR-E meets industry standards.

7.What is the process for return or replacement of HZM10NB1TR-E?

All HZM10NB1TR-E units undergo pre-shipment inspection (PSI). If there is an issue with HZM10NB1TR-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HZM10NB1TR-E part is unused and in its original packaging.

Return procedure for HZM10NB1TR-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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