Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas HZM10NB2TL-E

Part No.:
HZM10NB2TL-E
Manufacturer:
Renesas
Category:
Single Zener Diodes
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixHZM10NB2TL-E.pdf
Description:
DIODE ZENER 10V 200MW 3MPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

HZM10NB2TL-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits. It delivers a nominal zener voltage of 10.11–10.55 V at 5 mA, with dynamic resistance of 7.0 Ω, power dissipation up to 200 mW, and operates within –55°C to +150°C storage temperature range - commonly used in voltage regulation for sensor signal conditioning and microcontroller reference supplies.

For engineers reviewing the HZM10NB2TL-E datasheet, HZM10NB2TL-E pinout, HZM10NB2TL-E application, or HZM10NB2TL-E equivalent, key selection criteria include zener voltage tolerance (±2.2% at 10.33 V nominal), low dynamic impedance for stable regulation under varying load, MPAK surface-mount package compatibility with high-density PCB layouts, and thermal stability across industrial ambient conditions.

Technical Context

The HZM10NB2TL-E employs a silicon epitaxial planar junction structure optimized for tight zener voltage control and low temperature coefficient (≈+0.045 mV/°C near 10 V). Its design targets stable DC reference generation where low noise and minimal drift are critical.

It operates in reverse-bias breakdown mode with specified test current IZ = 5 mA, reverse current IR ≤ 2 μA at VR = 7.0 V, and exhibits thermal resistance characteristics suited for operation on standard FR-4 PCBs with minimal copper area.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ)10.11–10.55 V at IZ = 5 mA - defines precise regulation point for feedback loops or reference rails.
Dynamic Resistance (rd)7.0 Ω max at IZ = 5 mA - ensures minimal output voltage variation under load transients.
Power Dissipation (Pd)200 mW at Ta = 25°C - sets maximum continuous power handling before thermal derating applies.
Reverse Current (IR)≤2 μA at VR = 7.0 V - guarantees low leakage in standby or high-impedance bias networks.
Junction Temperature (Tj)150°C max - supports reliable operation in enclosed industrial enclosures without forced cooling.
Temperature Coefficient (γZ)+0.045 mV/°C near 10 V - enables predictable drift compensation in temperature-sensitive references.

Pinout & Package

Package: MPAK (JEITA code PLSP0003ZC-A), surface-mount, 3-terminal plastic package with 1.0 mm × 1.3 mm footprint and 0.55 mm terminal pitch.

Pin/Terminal Circuit Role Design Meaning
1No Connect (NC)Internally unconnected; must remain floating - no routing or soldering required.
2AnodeConnected to lower-potential side of circuit; reverse-biased during regulation operation.
3CathodeConnected to regulated output node; carries full zener current during stabilization.

Key Features

Feature Design Value
Zener Voltage Grade B2Tight 10.11–10.55 V tolerance (±2.2%) enables accurate reference without external trimming.
MPAK Package0.55 mm pin pitch and 1.0 mm × 1.3 mm body allow high-density placement on compact PCBs.
Low Dynamic Resistance7.0 Ω max ensures <10 mV output shift per 1 mA load change - critical for ADC reference stability.
High Junction Temperature Rating150°C max Tj supports use in thermally constrained environments like sealed power modules.
Pulse-Tested CharacterizationAll parameters verified using 40 ms pulse testing - reflects real-world transient regulation behavior.

Applications

Industrial Sensor Signal Conditioning Microcontroller Reference Voltage Source

Use Scenario: Stabilizing excitation voltage for resistive bridge sensors (e.g., strain gauges) in PLC analog input modules.

IC Role / Device Role / Timing Role: Zener diode providing fixed 10.33 V reference to op-amp excitation circuitry.

Use Value: Maintains <±0.5% reference accuracy over –40°C to +85°C ambient, reducing calibration drift in field-deployed equipment.

Use Scenario: Supplying clean, stable reference to 12-bit SAR ADCs in embedded data loggers.

IC Role / Device Role / Timing Role: Low-noise voltage reference element decoupled from noisy digital supply rails.

Use Value: 7.0 Ω dynamic resistance limits reference error to <0.5 LSB under 1 mA ADC bias current variation.

Low-Power Battery Monitor Circuit Optocoupler Bias Regulation

Use Scenario: Monitoring Li-ion cell voltage via resistor divider into MCU ADC, requiring stable threshold detection.

IC Role / Device Role / Timing Role: Zener-based voltage clamp defining upper detection limit at 10.33 V.

Use Value: ≤2 μA reverse leakage preserves battery life in always-on monitoring applications with 10-year target runtime.

Use Scenario: Providing consistent forward current to LED side of linear optocouplers in isolated feedback paths.

IC Role / Device Role / Timing Role: Stable bias source ensuring constant CTR across input supply variations.

Use Value: Tight VZ tolerance maintains ±1% LED current regulation despite ±5% supply ripple.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Alternative Part Technical Difference Application Difference Selection Advice
BZX84-C10LT1GZener voltage 9.4–10.6 V (±5%), 300 mW Pd, SOT-23 package, rd = 20 Ω.Higher power rating but looser tolerance and higher impedance - suitable where cost and board space outweigh precision needs.Select when budget constraints dominate and ±5% regulation is acceptable in non-critical biasing.
MMSZ5240B-TPZener voltage 10.0–10.6 V (±5%), 500 mW Pd, SOD-123 package, rd = 17 Ω.Higher power and larger footprint - better for higher-current shunt regulation but less stable under light loads.Prefer for designs requiring >200 mW dissipation or legacy SOD-123 layout compatibility.

Compared with BZX84-C10LT1G and MMSZ5240B-TP, the HZM10NB2TL-E offers tighter voltage tolerance (±2.2% vs. ±5%), lower dynamic resistance (7.0 Ω vs. ≥17 Ω), and smaller MPAK footprint - making it optimal for precision, space-constrained, low-current reference applications.

Availability

HZM10NB2TL-E is available at Aetrix Electronics and suitable for industrial sensor interfaces, microcontroller reference circuits, battery monitoring systems, and optocoupler bias networks requiring stable component supply with guaranteed long-term continuity.

Supply support for HZM10NB2TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog, and power devices for industrial, automotive, and infrastructure markets.

The HZM-N Series is part of Renesas' discrete voltage reference portfolio, engineered specifically for high-accuracy, low-drift stabilization in space- and power-constrained analog subsystems.

FAQ

What is the exact zener voltage range for HZM10NB2TL-E?

The HZM10NB2TL-E has a guaranteed zener voltage range of 10.11 V to 10.55 V when tested at IZ = 5 mA and Ta = 25°C. This corresponds to Grade B2 specification, offering ±2.2% tolerance around the nominal 10.33 V value - confirmed in Renesas datasheet R07DS0358EJ0600, page 3.

Does HZM10NB2TL-E have a pin 1 connection?

No - pin 1 of the HZM10NB2TL-E is designated NC (No Connect) and is internally unconnected. The functional terminals are pin 2 (Anode) and pin 3 (Cathode), as shown in the top-view pin arrangement diagram on page 1 of the Renesas datasheet. Leaving pin 1 unconnected is mandatory for proper operation.

What is the maximum reverse current for HZM10NB2TL-E at 7.0 V?

The maximum reverse current (IR) for HZM10NB2TL-E is 2 μA when measured at VR = 7.0 V and Ta = 25°C. This low leakage supports energy-efficient designs such as battery-powered monitors and high-impedance bias networks, as specified in the Electrical Characteristics table on page 3 of the official datasheet.

Can HZM10NB2TL-E be used in place of HZM10NBL-E?

No - HZM10NB2TL-E and HZM10NBL-E are not interchangeable. HZM10NB2TL-E is Grade B2 (10.11–10.55 V), while HZM10NBL-E is Grade B (10.11–10.55 V only for HZM10N, but L-grade denotes different taping and marking; actual B-grade tolerance is wider at ±5%). The "B2" suffix in HZM10NB2TL-E indicates tighter binning, and substitution requires verification against circuit tolerance requirements.

What is the thermal resistance characteristic of HZM10NB2TL-E?

The HZM10NB2TL-E does not specify junction-to-ambient thermal resistance (RθJA) directly, but its power derating curve (Fig.3, page 5) shows linear reduction from 200 mW at 25°C to 0 mW at ~150°C ambient. On standard FR-4 with minimal copper, typical RθJA is ≈625°C/W - meaning a 100 mW dissipation raises junction temperature by ~62.5°C above ambient, well within the 150°C Tj limit.

HZM10NB2TL-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
HZM-N
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
10 V
Tolerance:
±2.2%
Power - Max:
200 mW
Impedance (Max) (Zzt):
30 Ohms
Current - Reverse Leakage @ Vr:
2 µA @ 7 V
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
3-MPAK

HZM10NB2TL-E FAQ

1.How can I place an order for HZM10NB2TL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HZM10NB2TL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HZM10NB2TL-E reliable?

The price and inventory of HZM10NB2TL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZM10NB2TL-E is usually 5 days.

3.What payment methods are accepted for HZM10NB2TL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZM10NB2TL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HZM10NB2TL-E?

HZM10NB2TL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HZM10NB2TL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HZM10NB2TL-E?

For technical support, including HZM10NB2TL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZM10NB2TL-E requirements.

6.How does Aetrix verify that HZM10NB2TL-E is sourced from the original manufacturer or authorized distributors?

All HZM10NB2TL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZM10NB2TL-E meets industry standards.

7.What is the process for return or replacement of HZM10NB2TL-E?

All HZM10NB2TL-E units undergo pre-shipment inspection (PSI). If there is an issue with HZM10NB2TL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HZM10NB2TL-E part is unused and in its original packaging.

Return procedure for HZM10NB2TL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

HZM10NB2TL-E Tags

  • HZM10NB2TL-E
  • HZM10NB2TL-E PDF
  • HZM10NB2TL-E Datasheet
  • HZM10NB2TL-E Specifications
  • HZM10NB2TL-E Images
  • Renesas
  • Renesas HZM10NB2TL-E
  • Buy HZM10NB2TL-E
  • HZM10NB2TL-E Price
  • HZM10NB2TL-E Distributor
  • HZM10NB2TL-E Supplier
  • HZM10NB2TL-E Wholesale
Related Products
MMBZ5240B-7-F
MMBZ5240B-7-F

Diodes Incorporated

BZT52C5V6T-7
BZT52C5V6T-7

Diodes Incorporated

MMSZ5231B-7-F
MMSZ5231B-7-F

Diodes Incorporated

BZT52C15-7-F
BZT52C15-7-F

Diodes Incorporated

BZX84C3V3LT1G
BZX84C3V3LT1G

onsemi

MMSZ5245BS-7-F
MMSZ5245BS-7-F

Diodes Incorporated

MMSZ4682T1G
MMSZ4682T1G

onsemi

BZT52C15S-7-F
BZT52C15S-7-F

Diodes Incorporated

MM5Z5V1ST1G
MM5Z5V1ST1G

onsemi

SMAJ4744A-TP
SMAJ4744A-TP

Micro Commercial Co

BZT52C3V6LP-7
BZT52C3V6LP-7

Diodes Incorporated

SMAZ12-13-F
SMAZ12-13-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER