Renesas HZM10NB3TL-E

Overview

HZM10NB3TL-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits. It delivers a nominal zener voltage of 10.11–10.55 V at 5 mA, with dynamic resistance of 7.0 Ω, power dissipation up to 200 mW, and operates within –55°C to +150°C storage temperature range - ideal for voltage regulation in sensor signal conditioning and power supply feedback loops.

For engineers reviewing the HZM10NB3TL-E datasheet, HZM10NB3TL-E pinout, HZM10NB3TL-E application, or HZM10NB3TL-E equivalent, key selection criteria include its B3-grade zener voltage tolerance (±2.2% typical), MPAK surface-mount package compatibility with high-density PCB layouts, thermal stability across industrial ambient temperatures, and compliance with JEITA package code PLSP0003ZC-A.

Technical Context

The HZM10NB3TL-E employs a silicon epitaxial planar junction structure optimized for stable reverse-breakdown behavior under DC and pulsed conditions (Pw = 40 ms). Its zener voltage exhibits a positive temperature coefficient of +0.045 mV/°C near 10 V, enabling predictable drift compensation in reference designs.

Designed for operation at IZ = 5 mA, it maintains low dynamic impedance (7.0 Ω) and limits reverse leakage to ≤2 μA at VR = 7.0 V. The device is rated for 200 mW power dissipation at Ta = 25°C, derating linearly above 25°C per Fig.3 in the datasheet.

Key Specifications

Pinout & Package

Package: MPAK (JEITA code PLSP0003ZC-A), 3-terminal surface-mount package with 1.0 mm × 1.3 mm body, 0.35–0.5 mm lead width, and 2.2–3.0 mm terminal pitch (e dimension).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar zener voltage regulation applications.

Compared with BZX84-C10LT1G and MMSZ5240B-TP, the HZM10NB3TL-E offers tighter voltage tolerance and lower dynamic resistance in a smaller MPAK footprint - making it optimal for space-constrained, high-accuracy analog references where long-term stability and thermal predictability are critical.

Availability

HZM10NB3TL-E is available at Aetrix Electronics and suitable for industrial sensor reference, low-power ADC biasing, SMPS feedback divider, and overvoltage clamp protection requiring stable component supply, consistent parametric performance across production lots, and RoHS-compliant packaging.

Supply support for HZM10NB3TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog power, and timing solutions for industrial, automotive, and infrastructure markets.

The HZM-N Series is part of Renesas' discrete voltage reference portfolio, engineered specifically for high-stability, low-drift zener regulation in space- and power-sensitive applications - emphasizing grade-specific VZ accuracy, thermal predictability, and MPAK manufacturability.

FAQ

What is the exact zener voltage range for HZM10NB3TL-E at 5 mA?

The HZM10NB3TL-E has a guaranteed zener voltage range of 10.11 V to 10.55 V when tested at IZ = 5 mA and Ta = 25°C. This B3-grade specification reflects ±2.2% tolerance around the nominal 10.33 V center point, confirmed in Table on page 3 of R07DS0358EJ0600 Rev.6.00. The HZM10NB3TL-E maintains this range across its qualified operating temperature span.

Does HZM10NB3TL-E have a usable anode connection, or is Pin 1 truly unused?

Pin 1 of the HZM10NB3TL-E is designated NC (No Connect) and is electrically isolated - it must not be soldered or tied to any net on the PCB. Only Pins 2 (Anode) and 3 (Cathode) form the functional zener junction. This three-terminal MPAK layout accommodates standardized pick-and-place tooling while maintaining internal die isolation, as shown in the "Pin Arrangement" diagram on page 1 of the datasheet.

What is the maximum reverse leakage current for HZM10NB3TL-E, and at what test voltage?

The maximum reverse leakage current (IR) for HZM10NB3TL-E is 2 μA, measured at VR = 7.0 V and Ta = 25°C. This value is specified in the Electrical Characteristics table on page 3 of R07DS0358EJ0600 Rev.6.00. The low IR ensures minimal current draw in standby configurations, supporting ultra-low-power designs where the HZM10NB3TL-E serves as a precision bias source.

Can HZM10NB3TL-E be used in place of standard 10 V zeners like 1N4740A?

No - the HZM10NB3TL-E is not a drop-in replacement for through-hole zeners such as 1N4740A. It uses a 3-pin MPAK package with Pin 1 NC, whereas 1N4740A is DO-41 with two leads. Additionally, the HZM10NB3TL-E is rated for 200 mW (not 1 W), and its thermal characteristics assume surface-mount PCB copper area per Fig.2. Direct substitution would require layout redesign and power derating validation.

Is HZM10NB3TL-E compliant with RoHS and REACH regulations?

Yes - HZM10NB3TL-E is RoHS-compliant and meets REACH SVHC requirements, as confirmed by Renesas' public environmental compliance documentation and product change notifications. The MPAK package uses lead-free matte tin plating, and the device carries the "EU RoHS Directive compliant" marking per Renesas' standard policy stated in the Colophon and Notice sections of R07DS0358EJ0600 Rev.6.00.