Renesas HZM11NB1JTL-E

Overview

HZM11NB1JTL-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits, with a nominal zener voltage of 11.42–11.90 V at 5 mA, dynamic resistance of 8.0 Ω, and power dissipation rating of 200 mW in the MPAK (SC-59A) package.

For engineers reviewing the HZM11NB1JTL-E datasheet, HZM11NB1JTL-E pinout, HZM11NB1JTL-E application, or HZM11NB1JTL-E equivalent, key selection considerations include its tight ±2.1% zener voltage tolerance (Grade B1), low temperature coefficient (≈+0.035 mV/°C near 11 V), surface-mount MPAK footprint, and suitability for voltage reference, overvoltage protection, and biasing in space-constrained industrial and consumer electronics.

Technical Context

The HZM11NB1JTL-E operates as a two-terminal shunt regulator, maintaining stable output voltage across varying load currents by conducting reverse current above its specified zener breakdown threshold. Its epitaxial planar construction ensures consistent breakdown characteristics and low leakage.

It is rated for junction temperatures up to 150°C and storage from –55°C to +150°C, with absolute maximum power dissipation of 200 mW at 25°C ambient-derating linearly above that per Fig.3. Reverse current is limited to ≤2 µA at VR = 9.15 V, confirming sharp knee behavior near nominal VZ.

Key Specifications

Pinout & Package

Package: MPAK (JEITA code PLSP0003ZC-A, equivalent to SC-59A), 3-pin surface-mount package with 1.0 mm × 1.3 mm footprint, 0.55 mm terminal pitch, and 0.1–0.26 mm lead thickness. Designed for high-density placement and reflow compatibility.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with BZX84-C11LT1G and MMSZ5240B-TP, the HZM11NB1JTL-E delivers tighter voltage tolerance (±2.1% vs. ±5%), lower dynamic resistance (8.0 Ω vs. ≥15 Ω), and a smaller MPAK footprint-making it optimal for space-constrained, high-accuracy reference designs where long-term stability and low leakage are prioritized over unit cost.

Availability

HZM11NB1JTL-E is available at Aetrix Electronics and suitable for industrial sensor conditioning, USB-C power delivery reference design, and medical wearable battery monitoring requiring stable component supply, RoHS-compliant packaging, and traceable lot-level documentation.

Supply support for HZM11NB1JTL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer headquartered in Japan, specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and enterprise applications.

The HZM-N Series is part of Renesas' discrete Zener diode portfolio, engineered specifically for high-stability voltage reference and low-power shunt regulation in compact, surface-mount form factors-targeting applications demanding precision, reliability, and thermal robustness.

FAQ

What is the exact zener voltage range for HZM11NB1JTL-E at 5 mA test current?

The HZM11NB1JTL-E has a guaranteed zener voltage range of 11.42 V to 11.90 V when tested at IZ = 5 mA, corresponding to Grade B1 tolerance per the R07DS0358EJ0600 datasheet. This ±2.1% specification ensures predictable regulation behavior in feedback networks and reference circuits where tight voltage control is required. The HZM11NB1JTL-E achieves this consistency via epitaxial planar process control and laser-trimmed grading.

Does HZM11NB1JTL-E have a functional pin 1, and what happens if it is connected?

No, pin 1 of the HZM11NB1JTL-E is designated NC (No Connect) and is electrically isolated from the internal die. Connecting pin 1 risks introducing parasitic capacitance, mechanical stress on the bond wire, or unintended current paths that may degrade regulation stability or cause premature failure. The HZM11NB1JTL-E must be mounted with pin 1 left floating and un-soldered, as confirmed by the top-view pin arrangement diagram on page 1 of the datasheet.

What is the maximum reverse current specification for HZM11NB1JTL-E, and at what voltage is it measured?

The HZM11NB1JTL-E specifies a maximum reverse current (IR) of 2 µA, measured at VR = 9.15 V-approximately 83% of its minimum zener voltage. This low leakage confirms a sharp breakdown knee and supports ultra-low-power applications such as battery-monitoring circuits where standby current must remain below 1 µA. The HZM11NB1JTL-E maintains this performance across its qualified operating temperature range.

Can HZM11NB1JTL-E be used in place of a 12 V zener diode in a simple overvoltage clamp?

The HZM11NB1JTL-E is not a direct substitute for a 12 V zener due to its 11.42–11.90 V nominal range; using it in a 12 V clamp may result in premature conduction or insufficient headroom. For 12 V clamping, Renesas offers HZM12NB3JTL-E (12.08–12.60 V). The HZM11NB1JTL-E is optimized for 11.5 V reference use-not general-purpose clamping-and its Grade B1 tolerance ensures repeatability only within its specified band.

What is the thermal derating behavior of HZM11NB1JTL-E above 25°C ambient temperature?

The HZM11NB1JTL-E follows linear thermal derating from its 200 mW maximum power dissipation at Ta = 25°C, as shown in Fig.3 of the datasheet. Derating begins immediately above 25°C, reaching zero allowable dissipation at approximately 150°C case temperature. Designers must calculate junction temperature using θJA (not provided, but typical for MPAK is ~400°C/W) and ensure continuous operation stays within the 150°C Tj limit. The HZM11NB1JTL-E's rated storage range (–55°C to +150°C) does not imply operational capability at extremes.