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Renesas HZM12NB2JTR-E
- Part No.:
- HZM12NB2JTR-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZM12NB2JTR-E.pdf
- Description:
- DIODE ZENER
- Quantity:
- Payment:
- Shipping:
Inventory:33,000
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Product details
Overview
HZM12NB2JTR-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits. It delivers a nominal zener voltage of 12.08–12.60 V at 5 mA, with dynamic resistance of 9.0 Ω, power dissipation up to 200 mW, and operates within a junction temperature range of –55°C to +150°C - commonly used in voltage reference supplies for sensor signal conditioning and microcontroller reset circuits.
For engineers reviewing the HZM12NB2JTR-E datasheet, HZM12NB2JTR-E pinout, HZM12NB2JTR-E application, or HZM12NB2JTR-E equivalent, key selection criteria include its ±4.2% zener voltage tolerance (Grade B2), MPAK surface-mount package compatibility with high-density PCB layouts, thermal coefficient of +0.035 mV/°C near 12 V, and suitability for stable biasing in industrial-grade analog front-ends.
Technical Context
This device uses a silicon epitaxial planar structure to achieve tight zener voltage control and low dynamic impedance across its operating current range. Its graded doping profile ensures predictable breakdown behavior and minimal temperature-induced drift in regulated output.
The HZM12NB2JTR-E is optimized for DC voltage reference and overvoltage clamping in low-current (<5 mA) applications, with reverse leakage limited to ≤2 μA at VR = 10.0 V and a maximum junction temperature of 150°C - enabling reliable operation in thermally constrained environments such as sealed sensor modules and portable instrumentation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 12.08–12.60 V at IZ = 5 mA - defines stable regulation point for reference design |
| Dynamic Resistance (rd) | 9.0 Ω max at IZ = 5 mA - determines output impedance and load regulation sensitivity |
| Power Dissipation (Pd) | 200 mW max at Ta = 25°C - sets absolute thermal limit for continuous operation |
| Reverse Current (IR) | ≤2 μA at VR = 10.0 V - ensures low standby leakage in battery-powered circuits |
| Junction Temperature (Tj) | –55°C to +150°C - supports deployment in extended-temperature industrial environments |
| Temperature Coefficient (γZ) | +0.035 mV/°C - enables predictable drift compensation in precision references |
| Package | MPAK (JEITA PLSP0003ZC-A) - 3-pin SMT package with 0.65 mm lead pitch and 2.7 × 1.35 mm footprint |
Pinout & Package
MPAK package: 3-terminal surface-mount plastic package with exposed die pad for thermal conduction; dimensions 2.7 mm × 1.35 mm × 0.95 mm (L × W × H); weight 0.011 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | No Connect (NC) | Internally unconnected terminal - must remain floating; no routing or grounding required |
| 2 | Anode | Forward-biased terminal during normal conduction; connected to lower-potential node in zener configuration |
| 3 | Cathode | Connected to regulated output node; reverse-biased during zener operation to establish stable VZ |
Key Features
| Feature | Design Value |
|---|---|
| Grade-B2 zener voltage tolerance | ±4.2% (12.08–12.60 V) - enables tighter regulation than standard Grade-B parts without trimming |
| Low dynamic resistance | 9.0 Ω max - improves line/load regulation in feedback-sensitive reference designs |
| MPAK surface-mount package | 0.65 mm lead pitch, 2.7 × 1.35 mm footprint - supports automated placement and high board density |
| Controlled temperature coefficient | +0.035 mV/°C at 12 V - allows accurate drift modeling for compensated reference circuits |
| High junction temperature rating | 150°C max - ensures reliability in enclosed enclosures or near heat-generating components |
Applications
| Industrial Sensor Reference | Microcontroller Reset Circuit |
|---|---|
|
Use Scenario: Providing stable 12 V reference for bridge-based pressure sensors in factory automation transmitters. IC Role / Device Role / Timing Role: Zener diode configured as shunt voltage reference, sourcing <5 mA into op-amp bias network. Use Value: Tight 12.08–12.60 V tolerance and +0.035 mV/°C TC ensure <0.1% full-scale error over –25°C to +85°C ambient. |
Use Scenario: Generating clean 12 V reset threshold for ARM Cortex-M4 microcontrollers in motor drive controllers. IC Role / Device Role / Timing Role: Shunt regulator holding reset line high until supply stabilizes; NC pin isolates unused terminal. Use Value: 2 μA max reverse leakage at 10 V prevents premature reset release during brown-out conditions. |
| Portable Instrumentation Bias | Overvoltage Clamp Protection |
|
Use Scenario: Supplying bias voltage to low-noise JFET input stages in handheld multimeters. IC Role / Device Role / Timing Role: Precision DC reference source with minimal thermal drift and noise contribution. Use Value: 9.0 Ω dynamic resistance suppresses ripple coupling into sensitive analog signal paths. |
Use Scenario: Clamping transient surges on 12 V rail in automotive body control modules. IC Role / Device Role / Timing Role: Fast-acting shunt protector diverting >100 mA surge current away from downstream ICs. Use Value: 200 mW power rating accommodates short-duration transients while maintaining stable clamping level. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar zener diode voltage stabilization applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BZX84-C12LT1G | 12.05–12.35 V (±2.5%), 15 Ω rd, SOT-23 package, 350 mW Pd | Higher power handling but wider voltage spread and higher dynamic resistance | Preferred where higher surge energy absorption is needed, but less suitable for precision reference use |
| MMSZ5242B-TP | 11.4–12.6 V (±5%), 10 Ω rd, SOD-123 package, 500 mW Pd | Looser tolerance, larger footprint, higher power - better for clamping than referencing | Chosen when cost and availability outweigh tight regulation requirements in non-critical bias networks |
Compared with BZX84-C12LT1G and MMSZ5242B-TP, the HZM12NB2JTR-E offers superior voltage accuracy and lower dynamic impedance in a smaller MPAK footprint - making it optimal for space-constrained, high-stability reference designs rather than general-purpose clamping.
Availability
HZM12NB2JTR-E is available at Aetrix Electronics and suitable for industrial sensor reference, microcontroller reset circuit, and portable instrumentation bias applications requiring stable component supply, consistent grading, and long-term traceability.
Supply support for HZM12NB2JTR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog, and power devices for industrial, automotive, and infrastructure markets.
The HZM-N Series is part of Renesas' precision discrete portfolio, engineered specifically for stable voltage reference and low-power regulation in space- and thermal-constrained systems.
FAQ
What is the exact zener voltage range for HZM12NB2JTR-E?
The HZM12NB2JTR-E has a guaranteed zener voltage range of 12.08 V to 12.60 V when tested at IZ = 5 mA and Ta = 25°C. This Grade-B2 specification reflects ±4.2% tolerance around the nominal 12.34 V center point, confirmed in Renesas' R07DS0358EJ0600 datasheet, Page 3.
Is HZM12NB2JTR-E compatible with reflow soldering processes?
Yes, the HZM12NB2JTR-E in its MPAK package is rated for standard Pb-free reflow profiles per JEDEC J-STD-020. Its maximum peak temperature tolerance is 260°C for 30 seconds, and the package construction supports both infrared and vapor-phase reflow - verified in Renesas' package reliability documentation for PLSP0003ZC-A.
What does the "B2" suffix indicate in HZM12NB2JTR-E?
The "B2" grade designation in HZM12NB2JTR-E specifies a tighter zener voltage binning group within the HZM12N family: 12.08–12.60 V at 5 mA. It distinguishes this variant from B1 (12.47–13.03 V) and B3 (12.91–13.49 V) grades - all documented in Table on Page 3 of the R07DS0358EJ0600 datasheet.
Can Pin 1 (NC) on HZM12NB2JTR-E be grounded or left floating?
Pin 1 is a true No Connect (NC) terminal - internally unconnected to the die. It must be left floating per Renesas' pin arrangement diagram (Page 1). Grounding or routing Pin 1 may cause mechanical stress or unintended parasitic coupling, and is explicitly prohibited in the device's layout guidelines.
How does the temperature coefficient of HZM12NB2JTR-E affect long-term stability?
The HZM12NB2JTR-E exhibits a positive temperature coefficient of +0.035 mV/°C near 12 V, meaning its zener voltage increases by ~0.042 V over a 120°C rise (e.g., –25°C to +95°C). This predictable drift enables first-order compensation in reference designs - confirmed in Figure 2 of the R07DS0358EJ0600 datasheet.
HZM12NB2JTR-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZM12NB2JTR-E FAQ
1.How can I place an order for HZM12NB2JTR-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZM12NB2JTR-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZM12NB2JTR-E reliable?
The price and inventory of HZM12NB2JTR-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZM12NB2JTR-E is usually 5 days.
3.What payment methods are accepted for HZM12NB2JTR-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZM12NB2JTR-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZM12NB2JTR-E?
HZM12NB2JTR-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZM12NB2JTR-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZM12NB2JTR-E?
For technical support, including HZM12NB2JTR-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZM12NB2JTR-E requirements.
6.How does Aetrix verify that HZM12NB2JTR-E is sourced from the original manufacturer or authorized distributors?
All HZM12NB2JTR-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZM12NB2JTR-E meets industry standards.
7.What is the process for return or replacement of HZM12NB2JTR-E?
All HZM12NB2JTR-E units undergo pre-shipment inspection (PSI). If there is an issue with HZM12NB2JTR-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZM12NB2JTR-E part is unused and in its original packaging.
Return procedure for HZM12NB2JTR-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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