Renesas HZM12NB2TR-E

Overview

HZM12NB2TR-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits. It delivers a nominal zener voltage of 12.47–13.03 V at 5 mA test current, with dynamic resistance of 9.0 Ω, power dissipation rating of 200 mW, and junction temperature limit of 150 °C - enabling use in compact voltage reference and overvoltage protection stages of sensor signal conditioning modules.

For engineers reviewing the HZM12NB2TR-E datasheet, HZM12NB2TR-E pinout, HZM12NB2TR-E application, or HZM12NB2TR-E equivalent, key selection considerations include its B2-grade voltage tolerance (±2.3% at 12.75 V nominal), MPAK surface-mount package compatibility with high-density PCB layouts, thermal coefficient of +0.035 mV/°C near 12 V, and suitability for low-current (<5 mA) stabilization where tight regulation and minimal temperature drift are required.

Technical Context

The HZM12NB2TR-E operates as a two-terminal shunt regulator, maintaining stable output voltage by conducting reverse current above its specified zener breakdown threshold. Its epitaxial planar construction ensures consistent breakdown characteristics and low leakage under reverse bias up to 10.55 V.

This device functions exclusively in reverse-biased mode, with no forward conduction role. Its electrical behavior is defined by three core parameters: zener voltage (V_Z) at I_Z = 5 mA, dynamic resistance (r_d) measured at same condition, and maximum reverse current (I_R ≤ 2 µA at V_R = 10.55 V), all verified per R07DS0358EJ0600 Rev.6.00.

Key Specifications

Pinout & Package

Package: MPAK (JEITA code PLSP0003ZC-A), 3-terminal surface-mount package measuring 2.7–3.1 mm × 1.35–1.65 mm × 0.8–1.0 mm (L×W×H), optimized for high-density PCB placement and reflow soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with BZX84-C12LT1G and MMSZ4687T1G, the HZM12NB2TR-E offers tighter voltage control (±2.3% vs. ±5%), lower dynamic resistance (9.0 Ω vs. ≥25 Ω), and smaller MPAK footprint - making it optimal for space-constrained, high-accuracy analog reference designs rather than bulk overvoltage suppression.

Availability

HZM12NB2TR-E is available at Aetrix Electronics and suitable for industrial sensor reference, USB port overvoltage clamp, and low-power IoT node regulator applications requiring stable component supply, consistent grade-B2 binning, and RoHS-compliant MPAK packaging.

Supply support for HZM12NB2TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog power devices, and timing solutions for industrial, automotive, and infrastructure markets.

The HZM-N Series is part of Renesas' discrete Zener portfolio engineered for high-stability voltage reference and precision clamping in space-constrained, thermally demanding applications - emphasizing tight grading, low dynamic resistance, and robust MPAK packaging.

FAQ

What is the exact zener voltage range for HZM12NB2TR-E at 5 mA test current?

The HZM12NB2TR-E has a guaranteed zener voltage range of 12.47 V to 13.03 V when tested at I_Z = 5 mA, per R07DS0358EJ0600 Rev.6.00. This B2-grade specification corresponds to ±2.3% tolerance around the nominal 12.75 V value and is validated under pulse conditions (P_w = 40 ms). The HZM12NB2TR-E maintains this performance across its rated junction temperature range.

Does HZM12NB2TR-E have a functional pin 1, and what happens if it's connected?

No - pin 1 of the HZM12NB2TR-E is designated "NC" (No Connect) and is electrically isolated within the MPAK package. Connecting pin 1 to any net risks introducing parasitic capacitance or unintended coupling that may degrade high-frequency stability or increase leakage. The HZM12NB2TR-E's functional terminals are pin 2 (anode) and pin 3 (cathode) only, as confirmed in the official pin arrangement diagram.

What is the maximum reverse voltage that can be applied to HZM12NB2TR-E before breakdown?

The HZM12NB2TR-E begins controlled zener breakdown at its specified V_Z range (12.47–13.03 V), but the absolute maximum reverse voltage before irreversible damage is not defined separately - instead, safe operation requires limiting reverse current using a series resistor so that power dissipation stays within 200 mW. At V_R = 10.55 V, reverse current is guaranteed ≤2 µA; exceeding V_Z without current limiting risks thermal runaway. The HZM12NB2TR-E must always be used with appropriate external current limiting.

How does the temperature coefficient of HZM12NB2TR-E affect its performance at 85 °C ambient?

The HZM12NB2TR-E exhibits a temperature coefficient of +0.035 mV/°C near 12.75 V, meaning its zener voltage increases by approximately 2.1 mV over a 60 °C rise from 25 °C to 85 °C ambient. This results in a total shift of <0.02% - well within its ±2.3% B2-grade tolerance band. The HZM12NB2TR-E thus maintains regulation integrity in industrial environments without requiring active compensation.

Is HZM12NB2TR-E compatible with lead-free reflow soldering profiles?

Yes - the HZM12NB2TR-E's MPAK package (PLSP0003ZC-A) is qualified for standard lead-free reflow soldering per J-STD-020, with peak temperatures up to 260 °C. Its glass epoxy substrate and copper leadframe support full compliance, and the device carries RoHS certification per Renesas documentation. No special prebake or moisture sensitivity handling is required for the HZM12NB2TR-E prior to assembly.