Renesas HZM13NB2JTR-E

Overview

HZM13NB2JTR-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits. It delivers a nominal zener voltage of 13.37 V to 13.96 V at 5 mA test current, with dynamic resistance of 35 Ω max, power dissipation of 200 mW, and operates within –55°C to +150°C storage temperature range. It is commonly used in voltage regulation for sensor biasing, ADC reference shunts, and power supply feedback networks.

For engineers reviewing the HZM13NB2JTR-E datasheet, HZM13NB2JTR-E pinout, HZM13NB2JTR-E application, or HZM13NB2JTR-E equivalent, key selection criteria include its B2-grade zener voltage tolerance (±2.5% typical), MPAK surface-mount package compatibility with high-density PCB layouts, thermal stability across industrial temperature ranges, and low reverse leakage (<2 µA at VR = 10.0 V).

Technical Context

The HZM13NB2JTR-E employs a silicon epitaxial planar junction structure optimized for stable zener breakdown behavior under DC and low-frequency conditions. Its zener voltage exhibits a positive temperature coefficient of approximately +0.04 mV/°C near 13 V, enabling predictable drift compensation in reference designs.

It operates with a defined test condition of IZ = 5 mA and is characterized with pulsed measurement (PW = 40 ms) to minimize self-heating effects. The device is not intended for surge suppression or transient clamping - its absolute maximum ratings specify only 200 mW continuous power dissipation and no specified peak pulse power rating.

Key Specifications

Pinout & Package

MPAK package: 3-terminal surface-mount plastic package with exposed die pad (non-electrical), 2.7 mm × 1.35 mm body size, 0.65 mm lead pitch, and 0.35–0.5 mm lead width. Pin 1 is NC (no internal connection), Pin 2 is Anode, Pin 3 is Cathode - polarity must be observed for correct reverse-bias operation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with HZM13NB2JTR-E, BZX84-C13LT1G offers greater power margin but sacrifices voltage accuracy, while MMSZ4687T1G provides higher robustness and simpler pinout at the cost of tighter VZ control - making HZM13NB2JTR-E optimal for space-constrained, precision-biased industrial references.

Availability

HZM13NB2JTR-E is available at Aetrix Electronics and suitable for industrial sensor conditioning, microcontroller ADC reference shunting, and optocoupler feedback regulation requiring stable component supply, consistent parametric performance, and long-term obsolescence management.

Supply support for HZM13NB2JTR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer headquartered in Japan, specializing in microcontrollers, analog power devices, and timing solutions for industrial, automotive, and infrastructure markets.

HZM13NB2JTR-E belongs to the HZM-N Series of silicon epitaxial planar Zener diodes, engineered specifically for high-stability DC voltage reference and regulation in space-constrained industrial electronics.

FAQ

What is the exact zener voltage range for HZM13NB2JTR-E at 5 mA?

The HZM13NB2JTR-E has a guaranteed zener voltage range of 13.37 V minimum to 13.96 V maximum when tested at IZ = 5 mA and Ta = 25°C. This B2-grade specification reflects a tighter tolerance than standard B-grade parts in the HZM-N Series and is confirmed in the Electrical Characteristics table on page 3 of R07DS0358EJ0600 Rev.6.00. The HZM13NB2JTR-E achieves this precision through controlled epitaxial doping and laser trimming during manufacturing.

Is Pin 1 of HZM13NB2JTR-E electrically connected?

No, Pin 1 of the HZM13NB2JTR-E is designated NC (No Connection) and is internally unconnected. As shown in the Pin Arrangement diagram on page 1 of the datasheet, only Pins 2 (Anode) and 3 (Cathode) serve functional roles. Leaving Pin 1 floating is acceptable; grounding it does not affect electrical performance but may improve mechanical stability in some reflow profiles. The HZM13NB2JTR-E must be mounted with correct polarity to ensure reverse-bias operation.

What is the maximum allowable reverse current for HZM13NB2JTR-E at 10 V?

The maximum reverse current (IR) for HZM13NB2JTR-E is 2 µA when VR = 10.0 V, as specified in the Electrical Characteristics table on page 3 of R07DS0358EJ0600 Rev.6.00. This low leakage ensures minimal error contribution in high-impedance reference dividers and battery-sensitive applications. The HZM13NB2JTR-E maintains this spec across its full storage temperature range (–55°C to +150°C), though actual IR decreases at lower temperatures.

Can HZM13NB2JTR-E replace a generic 13 V Zener diode in existing designs?

Yes, the HZM13NB2JTR-E can replace generic 13 V Zeners if the design accommodates its MPAK package (2.7 × 1.35 mm), 3-pin configuration (with NC), and B2-grade voltage range (13.37–13.96 V). Unlike many 2-pin Zeners, the HZM13NB2JTR-E requires attention to Pin 1's NC status and layout clearance. Its lower dynamic resistance (35 Ω max) and tighter tolerance often improve regulation accuracy - but verify thermal dissipation margins, as its Pd is rated at 200 mW, not 350–500 mW like some SOT-23/SOD-123 alternatives.

Does HZM13NB2JTR-E have a specified temperature coefficient?

Yes, the HZM13NB2JTR-E exhibits a zener voltage temperature coefficient (γZ) of approximately +0.04 mV/°C, as shown in Figure 2 ("Temperature Coefficient vs. Zener Voltage") on page 5 of R07DS0358EJ0600 Rev.6.00. This value is typical for 13 V-class Zeners in the HZM-N Series and enables predictable drift modeling in compensated reference circuits. The HZM13NB2JTR-E's γZ remains stable across its operational junction temperature range and supports designs requiring <100 ppm/°C reference drift.