Renesas HZM18NB1JTL-E

Overview

HZM18NB1JTL-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits, with a nominal zener voltage of 18.5 V (min 18.86 V, max 19.70 V at I_Z = 5 mA), dynamic resistance of 45 Ω, and power dissipation rating of 200 mW in the MPAK surface-mount package.

For engineers reviewing the HZM18NB1JTL-E datasheet, HZM18NB1JTL-E pinout, HZM18NB1JTL-E application, or HZM18NB1JTL-E equivalent, this device serves as a stable, temperature-compensated voltage reference in power supply feedback loops, sensor biasing networks, and overvoltage protection clamps where tight tolerance (±2.3%) and low dynamic impedance are required.

Technical Context

The HZM18NB1JTL-E operates as a two-terminal shunt regulator, maintaining a stable reverse-biased breakdown voltage across its cathode–anode terminals under controlled test current (I_Z = 5 mA). Its silicon epitaxial planar construction ensures consistent breakdown characteristics and low leakage.

It exhibits a positive zener voltage temperature coefficient of +0.07 mV/°C (typ.) at 18 V, enabling predictable drift behavior in ambient temperature ranges from –55°C to +150°C, with junction temperature limited to 150°C and storage temperature spanning the same range.

Key Specifications

Pinout & Package

MPAK package (JEITA code SC-59A, Renesas code PLSP0003ZC-A) measures 2.7–3.1 mm × 1.35–1.65 mm × 0.95 mm max, with gull-wing leads and 0.65 mm lead pitch. Designed for reflow soldering on standard FR-4 PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with MMSZ5254B-TP and BZX84-C18LT1G, the HZM18NB1JTL-E delivers superior voltage accuracy (±2.3% vs. ±5%), lower profile (0.95 mm vs. ≥1.1 mm), and guaranteed NC pin isolation - making it optimal for high-density, high-precision analog subsystems where layout stability and thermal performance are critical.

Availability

HZM18NB1JTL-E is available at Aetrix Electronics and suitable for industrial power supplies, sensor signal conditioning circuits, and overvoltage protection modules requiring stable component supply, RoHS-compliant packaging, and traceable lot-level documentation.

Supply support for HZM18NB1JTL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and timing solutions for automotive, industrial, and enterprise systems.

The HZM-N Series was developed specifically for high-reliability voltage stabilization in compact, thermally demanding applications - emphasizing tight zener tolerance, low dynamic resistance, and robust MPAK packaging for automated manufacturing.

FAQ

What is the exact zener voltage range for HZM18NB1JTL-E at 5 mA test current?

The HZM18NB1JTL-E has a specified zener voltage range of 18.86 V minimum to 19.70 V maximum when tested at I_Z = 5 mA and T_a = 25°C. This 4.5% total span reflects Grade B1 tolerance per Renesas datasheet R07DS0358EJ0600 Rev.6.00, Page 3. The typical value is 19.3 V, and the device maintains this regulation within dynamic resistance limits up to its 200 mW power rating.

Does HZM18NB1JTL-E have a usable third pin, and how should Pin 1 be handled?

Yes - Pin 1 of the HZM18NB1JTL-E is explicitly designated as No Connect (NC) in the official pin arrangement diagram (R07DS0358EJ0600, Page 1). It is internally unconnected and must remain electrically floating: no trace routing, no soldering, and no connection to ground or any other net. This isolation prevents unintended parasitic paths that could affect regulation accuracy or thermal performance.

What is the maximum reverse leakage current for HZM18NB1JTL-E, and at what voltage is it measured?

The maximum reverse leakage current (I_R) for HZM18NB1JTL-E is 2 µA, measured at a reverse voltage (V_R) of 13.0 V, per Electrical Characteristics table on Page 3 of R07DS0358EJ0600 Rev.6.00. This low leakage ensures minimal quiescent current draw in bias networks and preserves accuracy in high-impedance reference nodes where even nanoamp-level currents impact performance.

Can HZM18NB1JTL-E be used in automotive applications, and what quality grade does it carry?

HZM18NB1JTL-E is rated as a "Standard" quality grade device per Renesas' classification (R07DS0358EJ0600, Page 6, Note 7), intended for computers, office equipment, communications gear, and industrial robots - not for automotive safety-critical or high-reliability transportation systems. While its 150°C junction rating permits under-hood use, Renesas does not certify it for AEC-Q101 or automotive qualification; designers must perform full system-level validation if deploying in automotive contexts.

What is the thermal derating behavior of HZM18NB1JTL-E above 25°C ambient temperature?

HZM18NB1JTL-E follows linear thermal derating above 25°C ambient, as shown in Fig.3 (Page 5 of R07DS0358EJ0600 Rev.6.00): power dissipation decreases from 200 mW at 25°C to zero at approximately 150°C. The derating slope is –1.67 mW/°C, meaning at 75°C ambient, maximum allowable P_d is 117 mW. This behavior assumes standard JEDEC 2-layer PCB mounting per the datasheet's thermal test condition.