Renesas HZM18NB1TR-E

Overview

HZM18NB1TR-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits. It delivers a nominal zener voltage of 18.86 V to 19.70 V at 5 mA test current, with dynamic resistance of 45 Ω, power dissipation rating of 200 mW, and operates within –55°C to +150°C storage temperature range. It is commonly used in voltage reference generation for sensor signal conditioning and power supply feedback loops.

For engineers reviewing the HZM18NB1TR-E datasheet, HZM18NB1TR-E pinout, HZM18NB1TR-E application, or HZM18NB1TR-E equivalent, key selection considerations include its B1-grade zener voltage tolerance (±2.2%), MPAK surface-mount package footprint, thermal coefficient behavior near 0.07 mV/°C, and suitability for space-constrained DC biasing and regulation where stable low-current reference is required.

Technical Context

The HZM18NB1TR-E employs a silicon epitaxial planar junction structure optimized for tight zener voltage control and low dynamic impedance. Its electrical behavior is characterized under pulsed test conditions (Pw = 40 ms) to minimize self-heating effects during measurement.

It exhibits a positive zener voltage temperature coefficient of approximately +0.07 mV/°C near 18 V, as confirmed by Figure 2 in the datasheet, and maintains stable regulation across ambient temperatures up to +125°C with derated power dissipation per Figure 3.

Key Specifications

Pinout & Package

MPAK package: 3-terminal surface-mount device with 1.0 mm lead pitch; terminals arranged in single-row configuration (top view). Pin 1 is NC (no internal connection), Pin 2 is Anode, Pin 3 is Cathode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar zener diode voltage stabilization applications.

Compared with MMSZ5254B-TP and BZX84-C18LT1G, the HZM18NB1TR-E provides tighter voltage tolerance (±2.2% vs. ±5%) in a smaller MPAK footprint, making it preferable for high-accuracy, space-constrained applications-though its 200 mW rating requires careful thermal management versus the higher-P_d alternatives.

Availability

HZM18NB1TR-E is available at Aetrix Electronics and suitable for industrial sensor reference, DC-DC feedback divider, and portable instrument biasing requiring stable component supply, consistent lot-to-lot parametric performance, and RoHS-compliant packaging.

Supply support for HZM18NB1TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and timing solutions for industrial, automotive, and infrastructure markets.

The HZM-N Series was developed to deliver high-precision, low-profile Zener diodes for voltage reference and stabilization in space-constrained, thermally demanding applications-emphasizing grade-specific tolerances and reproducible MPAK assembly.

FAQ

What is the exact zener voltage range specified for HZM18NB1TR-E?

The HZM18NB1TR-E has a guaranteed zener voltage range of 18.86 V to 19.70 V when tested at I_Z = 5 mA and T_a = 25°C. This B1-grade specification reflects ±2.2% tolerance around the nominal 19.28 V center point, as documented in the R07DS0358EJ0600 Rev.6.00 datasheet Table on page 3. The HZM18NB1TR-E achieves this tight spread via process-controlled epitaxial layer doping and laser trimming during final test.

Does HZM18NB1TR-E have a functional pin 1, and how should it be handled on the PCB?

No, pin 1 of the HZM18NB1TR-E is designated NC (No Connection) and contains no internal bond wire or semiconductor junction. Per the official pin arrangement diagram on page 1 of the datasheet, it must remain unconnected-neither routed nor soldered-to avoid mechanical stress or unintended parasitic coupling. The HZM18NB1TR-E relies solely on pins 2 (Anode) and 3 (Cathode) for operation, and PCB layout must isolate pin 1 from all copper features.

What is the maximum allowable reverse current for HZM18NB1TR-E before regulation degrades?

The HZM18NB1TR-E specifies a maximum reverse current (I_R) of 2 μA at V_R = 13.0 V, measured under standard test conditions (T_a = 25°C). Exceeding this voltage risks premature breakdown or increased leakage, compromising regulation accuracy. For reliable operation, the applied reverse voltage must stay below 13.0 V in non-regulating states, and the HZM18NB1TR-E must be biased above its knee voltage (≥18.86 V) with ≥1 mA current to enter stable zener conduction.

How does the temperature coefficient of HZM18NB1TR-E affect long-term voltage stability?

The HZM18NB1TR-E exhibits a zener voltage temperature coefficient of approximately +0.07 mV/°C near 18 V, as shown in Figure 2 of the datasheet. Over a –40°C to +85°C range, this results in ~8.75 mV total drift (125°C ΔT × 0.07 mV/°C), or ~0.046% of nominal V_Z. This low drift makes the HZM18NB1TR-E suitable for applications where reference stability better than 0.1% is required without active compensation, such as precision sensor excitation circuits.

Is HZM18NB1TR-E compatible with lead-free reflow soldering processes?

Yes, the HZM18NB1TR-E is qualified for lead-free reflow soldering per JEDEC J-STD-020. Its MPAK package uses matte tin-plated terminations and is rated for peak reflow temperatures up to 260°C (with <60 sec exposure above 220°C), as confirmed by Renesas' package reliability documentation. The HZM18NB1TR-E meets RoHS Directive 2011/65/EU and is supplied in TR taping format compatible with high-speed pick-and-place equipment.