Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas HZM18NB3TL-E

Part No.:
HZM18NB3TL-E
Manufacturer:
Renesas
Category:
Single Zener Diodes
Package:
-
Datasheet:
AetrixHZM18NB3TL-E.pdf
Description:
DIODE ZENER
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:36,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

HZM18NB3TL-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits. It delivers a nominal zener voltage of 18.21–19.03 V at 5 mA, with dynamic resistance of 45 Ω, power dissipation up to 200 mW, and operates within a junction temperature range of –55°C to +150°C - ideal for industrial sensor biasing and voltage reference applications.

For engineers reviewing the HZM18NB3TL-E datasheet, HZM18NB3TL-E pinout, HZM18NB3TL-E application, or HZM18NB3TL-E equivalent, key selection criteria include its B3-grade voltage tolerance (±0.82 V), MPAK surface-mount package compatibility, low temperature coefficient (≈+0.07 mV/°C near 18 V), and suitability for space-constrained DC bias networks requiring stable regulation under varying thermal conditions.

Technical Context

The HZM18NB3TL-E employs a silicon epitaxial planar structure optimized for tight zener voltage control and low dynamic impedance. Its electrical behavior is characterized under pulsed test conditions (Pw = 40 ms) to minimize self-heating effects during measurement.

This device functions exclusively as a two-terminal shunt regulator: cathode connects to higher potential, anode to lower potential, with no internal series resistance or temperature compensation circuitry. Its performance is defined by reverse-bias operation only - forward conduction is not specified beyond standard diode turn-on.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 18.21–19.03 V at IZ = 5 mA - defines stable regulation point for reference design
Dynamic Resistance (rd) 45 Ω max at IZ = 5 mA - determines output impedance and load regulation sensitivity
Power Dissipation (Pd) 200 mW at Ta = 25°C - sets maximum continuous DC power handling before thermal derating
Junction Temperature (Tj) –55°C to +150°C - enables operation in extended industrial environments without external heatsinking
Reverse Current (IR) 2 μA max at VR = 13.0 V - ensures minimal leakage in high-impedance bias networks
Temperature Coefficient (γZ) +0.07 mV/°C (typ.) near 18 V - quantifies drift per degree Celsius in precision references

Pinout & Package

Package: MPAK (JEITA code PLSP0003ZC-A), surface-mount, 3-pin, 1.0 mm × 1.3 mm footprint, 0.011 g mass. Designed for high-density PCB layouts and automated placement.

Pin/Terminal Circuit Role Design Meaning
1 No Connect (NC) Electrically isolated terminal - must remain unconnected; no internal bond or function
2 Anode Reference node for reverse-bias connection; ties to lower-potential rail in shunt regulator configuration
3 Cathode Input node for regulated voltage; connects to supply rail and current-limiting resistor

Key Features

Feature Design Value
B3-grade voltage tolerance ±0.82 V total spread (18.21–19.03 V) - supports tighter reference designs vs. B/B1/B2 grades
MPAK package 0.011 g mass, 1.0 × 1.3 mm footprint - enables miniaturized PCBs and high-speed SMT assembly
Pulsed test validation Specified under 40 ms pulse width - ensures parameter accuracy independent of steady-state thermal rise
Low leakage at rated VR 2 μA max at 13.0 V - preserves accuracy in high-impedance feedback or sensing paths

Applications

Industrial Sensor Biasing ADC Reference Stabilization

Use Scenario: Providing stable excitation voltage to resistive bridge sensors (e.g., strain gauges, RTDs) in PLC analog input modules.

IC Role / Device Role / Timing Role: Shunt voltage reference supplying fixed bias current through sensor network.

Use Value: Maintains <±0.5% full-scale error over –40°C to +85°C ambient due to low γZ and tight VZ tolerance.

Use Scenario: Generating precise 18 V reference for 16-bit SAR ADC front-end in data acquisition systems.

IC Role / Device Role / Timing Role: Two-terminal passive voltage reference replacing bulkier IC-based solutions.

Use Value: Enables ±0.01% linearity retention by limiting reference drift to <0.15 mV across 50°C operating range.

Power Supply Overvoltage Clamp Microcontroller Reset Circuit

Use Scenario: Clamping transient surges on 24 V industrial bus lines using series resistor and HZM18NB3TL-E.

IC Role / Device Role / Timing Role: Passive crowbar element absorbing energy above 19.03 V threshold.

Use Value: Limits peak voltage to ≤19.5 V during 100 ns transients, protecting downstream LDOs and logic.

Use Scenario: Generating clean reset signal for ARM Cortex-M microcontrollers powered from 20 V rails.

IC Role / Device Role / Timing Role: Zener-based brown-out detector feeding RC delay into MCU reset pin.

Use Value: Triggers reset at 18.2 V with <10 μs response time, ensuring deterministic boot under undervoltage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Alternative Part Technical Difference Application Difference Selection Advice
BZX84-C18LT1G 18 V nominal, ±5% tolerance (17.1–18.9 V), SOT-23 package, 350 mW Pd Wider VZ tolerance, higher power rating, smaller thermal mass Preferred where board space allows SOT-23 and looser regulation is acceptable
MMSZ5246B-TP 18 V nominal, ±5% tolerance (17.1–18.9 V), SOD-123 package, 500 mW Pd Higher power capability but larger footprint and ±5% grade vs. HZM18NB3TL-E's ±0.82 V spread Chosen when >200 mW dissipation or legacy SOD-123 layout compatibility is required

Compared with BZX84-C18LT1G and MMSZ5246B-TP, the HZM18NB3TL-E offers superior voltage precision (±0.82 V vs. ±5%) and compact MPAK packaging, making it optimal for high-accuracy, space-constrained industrial references - though its 200 mW limit requires careful current limiting in clamp roles.

Availability

HZM18NB3TL-E is available at Aetrix Electronics and suitable for industrial sensor biasing, ADC reference stabilization, power supply overvoltage clamping, and microcontroller reset circuit design requiring stable component supply and consistent B3-grade voltage matching.

Supply support for HZM18NB3TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer headquartered in Japan, specializing in microcontrollers, analog power devices, and precision discrete components for industrial and automotive markets.

The HZM-N Series is part of Renesas' silicon Zener diode portfolio engineered specifically for high-stability voltage reference and shunt regulation in industrial automation, test equipment, and sensor interface applications.

FAQ

What is the exact zener voltage range for HZM18NB3TL-E?

The HZM18NB3TL-E has a guaranteed zener voltage range of 18.21 V to 19.03 V when tested at IZ = 5 mA and Ta = 25°C. This B3-grade specification reflects a tighter tolerance than B1/B2 variants and is validated using pulsed measurement (Pw = 40 ms) to avoid thermal self-heating artifacts. The HZM18NB3TL-E datasheet confirms this range on page 3 of R07DS0358EJ0600 Rev.6.00.

Is Pin 1 of HZM18NB3TL-E electrically connected?

No - Pin 1 of the HZM18NB3TL-E is designated "NC" (No Connect) and is electrically isolated with no internal bond wire or semiconductor connection. The device operates as a two-terminal device using only Pins 2 (Anode) and 3 (Cathode). This NC pin serves mechanical alignment and package integrity purposes only and must remain unconnected in PCB layout. Confirmed in the "Pin Arrangement" diagram on page 1 of the HZM-N Series datasheet.

What is the maximum reverse current specification for HZM18NB3TL-E?

The HZM18NB3TL-E specifies a maximum reverse current (IR) of 2 μA at VR = 13.0 V and Ta = 25°C. This low leakage value ensures minimal error contribution in high-impedance reference divider networks and supports accurate biasing in precision analog stages. The parameter is explicitly listed in the Electrical Characteristics table on page 3 of R07DS0358EJ0600 Rev.6.00 for the HZM18N type with B3 grade.

Can HZM18NB3TL-E be used in place of a standard 18 V Zener diode like 1N4744A?

The HZM18NB3TL-E is not a direct replacement for 1N4744A due to fundamental differences: it uses an MPAK package (vs. DO-41), has B3-grade voltage tolerance (±0.82 V vs. ±5% for 1N4744A), and is rated for only 200 mW (vs. 1 W). While both regulate near 18 V, the HZM18NB3TL-E requires PCB redesign for MPAK footprint and current-limiting resistor recalculation. Its use case targets precision, not power handling.

What is the temperature coefficient behavior of HZM18NB3TL-E?

The HZM18NB3TL-E exhibits a positive temperature coefficient of approximately +0.07 mV/°C near its 18 V operating point, as shown in Figure 2 ("Temperature Coefficient vs. Zener Voltage") on page 5 of the datasheet. This means its zener voltage increases by ~0.07 mV per °C rise in junction temperature - a critical factor when designing temperature-stable references across –40°C to +85°C industrial ranges. The coefficient is measured and plotted across the full HZM-N series, including HZM18NB3TL-E.

HZM18NB3TL-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
-
Tolerance:
-
Power - Max:
-
Impedance (Max) (Zzt):
-
Current - Reverse Leakage @ Vr:
-
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

HZM18NB3TL-E FAQ

1.How can I place an order for HZM18NB3TL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HZM18NB3TL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HZM18NB3TL-E reliable?

The price and inventory of HZM18NB3TL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZM18NB3TL-E is usually 5 days.

3.What payment methods are accepted for HZM18NB3TL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZM18NB3TL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HZM18NB3TL-E?

HZM18NB3TL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HZM18NB3TL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HZM18NB3TL-E?

For technical support, including HZM18NB3TL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZM18NB3TL-E requirements.

6.How does Aetrix verify that HZM18NB3TL-E is sourced from the original manufacturer or authorized distributors?

All HZM18NB3TL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZM18NB3TL-E meets industry standards.

7.What is the process for return or replacement of HZM18NB3TL-E?

All HZM18NB3TL-E units undergo pre-shipment inspection (PSI). If there is an issue with HZM18NB3TL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HZM18NB3TL-E part is unused and in its original packaging.

Return procedure for HZM18NB3TL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

HZM18NB3TL-E Tags

  • HZM18NB3TL-E
  • HZM18NB3TL-E PDF
  • HZM18NB3TL-E Datasheet
  • HZM18NB3TL-E Specifications
  • HZM18NB3TL-E Images
  • Renesas
  • Renesas HZM18NB3TL-E
  • Buy HZM18NB3TL-E
  • HZM18NB3TL-E Price
  • HZM18NB3TL-E Distributor
  • HZM18NB3TL-E Supplier
  • HZM18NB3TL-E Wholesale
Related Products
MMBZ5240B-7-F
MMBZ5240B-7-F

Diodes Incorporated

BZT52C5V6T-7
BZT52C5V6T-7

Diodes Incorporated

MMSZ5231B-7-F
MMSZ5231B-7-F

Diodes Incorporated

BZT52C15-7-F
BZT52C15-7-F

Diodes Incorporated

BZX84C3V3LT1G
BZX84C3V3LT1G

onsemi

MMSZ5245BS-7-F
MMSZ5245BS-7-F

Diodes Incorporated

MMSZ4682T1G
MMSZ4682T1G

onsemi

BZT52C15S-7-F
BZT52C15S-7-F

Diodes Incorporated

MM5Z5V1ST1G
MM5Z5V1ST1G

onsemi

SMAJ4744A-TP
SMAJ4744A-TP

Micro Commercial Co

BZT52C3V6LP-7
BZT52C3V6LP-7

Diodes Incorporated

SMAZ12-13-F
SMAZ12-13-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER