Renesas HZM2.0NBTL-E

Overview

HZM2.0NBTL-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits, with a nominal zener voltage of 2.0 V (1.90–2.20 V), 200 mW power dissipation, and dynamic resistance of 120 Ω at 5 mA test current - used in voltage reference generation for sensor signal conditioning and portable battery-powered instrumentation.

For engineers reviewing the HZM2.0NBTL-E datasheet, HZM2.0NBTL-E pinout, HZM2.0NBTL-E application, or HZM2.0NBTL-E equivalent, key selection criteria include its tight 1.90–2.20 V zener tolerance (Grade B), MPAK surface-mount package compatibility with high-density PCB layouts, low 0.5 V reverse leakage threshold, and suitability for stable biasing in low-current (<5 mA) regulation paths.

Technical Context

This Zener diode operates in reverse breakdown mode to maintain a stable reference voltage across varying load and temperature conditions. Its epitaxial planar construction ensures consistent junction characteristics and low noise performance critical for analog front-ends.

The device exhibits a negative temperature coefficient of approximately –0.06 mV/°C near 2.0 V, as confirmed by Figure 2 of the datasheet, and is rated for junction temperatures up to 150°C with storage range from –55°C to +150°C - supporting industrial-grade reliability without derating below 25°C ambient.

Key Specifications

Pinout & Package

MPAK package (JEITA code PLSP0003ZC-A) is a compact 3-terminal surface-mount device with 1.0 mm × 1.3 mm footprint, 0.55 mm height, and gull-wing leads suitable for IPC Class 2/3 assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with BZX55C2V0 and MMSZ4678, HZM2.0NBTL-E offers tighter Grade-B voltage tolerance (±0.15 V), smaller MPAK footprint for high-density layouts, and lower dynamic resistance - making it optimal for space-constrained, low-current precision reference applications where thermal mass and board area are critical.

Availability

HZM2.0NBTL-E is available at Aetrix Electronics and suitable for portable sensor reference, low-voltage bias generation, ADC reference buffering, and microcontroller reset threshold applications requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for HZM2.0NBTL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and consumer markets.

HZM2.0NBTL-E belongs to the HZM-N Series of silicon epitaxial planar Zener diodes engineered specifically for stable, low-noise voltage reference and regulation in space-constrained, low-power electronic systems.

FAQ

What is the zener voltage range specified for HZM2.0NBTL-E at 5 mA test current?

The HZM2.0NBTL-E has a zener voltage range of 1.90 V to 2.20 V when tested at I_Z = 5 mA, per Grade B specification in the R07DS0358EJ0600 datasheet. This 0.3 V total spread reflects tight process control for low-voltage reference applications, and the device is marked with "2 0 –" laser code to indicate Grade B tolerance. The HZM2.0NBTL-E maintains this specification across its qualified operating temperature range without recalibration.

Does HZM2.0NBTL-E have a functional third pin, and how should Pin 1 be handled on the PCB?

No - Pin 1 of the HZM2.0NBTL-E is designated NC (No Connect) and contains no internal connection. It must remain unconnected on the PCB layout; soldering or routing to Pin 1 may cause mechanical stress or unintended coupling. The active terminals are Pin 2 (Anode) and Pin 3 (Cathode), with cathode being the regulated output node in standard reverse-bias configuration. This NC pin structure is consistent across all HZM-N Series devices in MPAK packaging.

What is the maximum reverse leakage current for HZM2.0NBTL-E, and at what voltage is it measured?

The maximum reverse leakage current for HZM2.0NBTL-E is 120 µA, measured at V_R = 0.5 V, as specified in the Electrical Characteristics table on page 2 of the datasheet. This parameter defines the upper bound of off-state conduction prior to reaching the zener knee, directly impacting standby power consumption in always-on sensor nodes. The HZM2.0NBTL-E achieves this low leakage while maintaining Grade-B voltage accuracy - a key differentiator versus generic 2.0 V Zeners with higher IR specs.

Can HZM2.0NBTL-E be used in place of a 2.0 V shunt reference IC like the TL431?

No - the HZM2.0NBTL-E is a passive two-terminal Zener diode, not a three-terminal adjustable shunt regulator like the TL431. It lacks internal amplification, temperature compensation, or programmability. While both regulate voltage in shunt configuration, the HZM2.0NBTL-E requires external current limiting and provides only fixed 2.0 V reference with inherent temperature drift (~–0.06 mV/°C). The HZM2.0NBTL-E suits simple, low-cost, low-current (<5 mA) references where ±0.15 V tolerance is acceptable; TL431 is preferred for precision, adjustable, or higher-current applications.

What is the thermal derating behavior of HZM2.0NBTL-E above 25°C ambient temperature?

HZM2.0NBTL-E follows linear thermal derating per Figure 3 in the datasheet: power dissipation decreases from 200 mW at 25°C ambient to zero at approximately 150°C case temperature. The derating slope is ~2.22 mW/°C above 25°C, meaning at 75°C ambient, maximum allowable P_d is ~90 mW. This behavior assumes standard JEDEC 2-layer PCB mounting (1.6 mm FR-4 with 1 oz Cu). Derating must be applied in enclosed or high-temperature environments to prevent junction exceedance - the HZM2.0NBTL-E's 150°C T_j rating enables reliable operation where thermal margins are constrained.