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Renesas HZM2.0NBTR-E
- Part No.:
- HZM2.0NBTR-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZM2.0NBTR-E.pdf
- Description:
- DIODE ZENER
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Product details
Overview
HZM2.0NBTR-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits, with a nominal zener voltage of 2.0 V (1.90–2.20 V), 200 mW power dissipation, and dynamic resistance of 120 Ω at 5 mA test current - used in voltage reference generation for sensor signal conditioning and microcontroller ADC biasing.
For engineers reviewing the HZM2.0NBTR-E datasheet, HZM2.0NBTR-E pinout, HZM2.0NBTR-E application, or HZM2.0NBTR-E equivalent, key selection criteria include its tight 1.90–2.20 V zener tolerance (Grade B), MPAK surface-mount package compatibility with high-density PCB layouts, low 120 Ω dynamic impedance, and −0.07 mV/°C temperature coefficient near 2 V - critical for stable references in battery-powered instrumentation.
Technical Context
This Zener diode operates in reverse breakdown mode with specified test conditions of IZ = 5 mA and pulse width = 40 ms. Its silicon epitaxial planar construction ensures reproducible breakdown characteristics and low leakage, supporting stable regulation across ambient temperatures from −55°C to +150°C.
The device exhibits a negative temperature coefficient of −0.07 mV/°C at ~2.0 V, typical for low-voltage Zeners, and is rated for 200 mW maximum power dissipation at Ta = 25°C - derating linearly above 25°C per Fig.3 in the datasheet. Junction-to-ambient thermal resistance is optimized by the MPAK package's copper leadframe and compact footprint.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 1.90–2.20 V at IZ = 5 mA - defines stable reference point for low-voltage analog circuits. |
| Power Dissipation (Pd) | 200 mW at Ta = 25°C - sets maximum continuous power handling before thermal derating applies. |
| Dynamic Resistance (rd) | 120 Ω max at IZ = 5 mA - determines output impedance and load regulation sensitivity. |
| Reverse Current (IR) | 120 µA max at VR = 0.5 V - quantifies leakage below breakdown, critical for low-power standby operation. |
| Junction Temperature (Tj) | 150°C maximum - constrains thermal design margin for PCB layout and power budgeting. |
| Temperature Coefficient (γZ) | −0.07 mV/°C - enables prediction of reference drift over operating temperature range. |
Pinout & Package
Package: MPAK (JEITA code PLSP0003ZC-A), surface-mount, 3-terminal, 1.0 mm × 1.3 mm × 0.55 mm profile, 0.011 g mass, compatible with automated pick-and-place and reflow soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | No Connect (NC) | Internally unconnected - must remain floating; no routing or grounding permitted. |
| 2 | Anode | Connected to lower-potential node in reverse-bias configuration; current enters here during regulation. |
| 3 | Cathode | Connected to higher-potential node; zener voltage develops between Cathode and Anode when reverse biased. |
Key Features
| Feature | Design Value |
|---|---|
| Low-Voltage Zener Stability | 1.90–2.20 V tolerance (Grade B) enables precise 2.0 V reference without external trimming. |
| High-Density Packaging | MPAK footprint (1.0 × 1.3 mm) supports miniaturized PCBs and high-speed SMT assembly. |
| Controlled Dynamic Impedance | 120 Ω max ensures <1% output deviation under ±1 mA load variation at 5 mA bias. |
| Wide Operating Temperature Range | −55°C to +150°C junction rating allows use in automotive under-hood and industrial environments. |
Applications
| Portable Sensor Reference | Microcontroller ADC Biasing |
|---|---|
Use Scenario: Low-power environmental sensor node powered by coin cell, requiring stable 2.0 V reference for analog front-end amplification and ADC conversion. IC Role / Device Role / Timing Role: Zener voltage reference providing fixed bias point for op-amp gain stages and ADC reference input. Use Value: Enables sub-1% measurement accuracy over −20°C to +70°C ambient without calibration, leveraging tight 1.90–2.20 V tolerance and −0.07 mV/°C TC. |
Use Scenario: 3.3 V MCU system where internal ADC requires external 2.0 V reference for improved resolution on low-amplitude signals. IC Role / Device Role / Timing Role: Precision shunt reference supplying clean, low-noise 2.0 V to ADC VREF pin. Use Value: Reduces ADC quantization error by stabilizing reference voltage against supply ripple and temperature drift, supported by 120 Ω rd and 200 mW Pd. |
| Industrial Signal Conditioning | Battery Voltage Monitoring |
Use Scenario: 4–20 mA transmitter loop with isolated analog output, needing stable 2.0 V reference for DAC scaling and current loop calibration. IC Role / Device Role / Timing Role: Primary voltage reference for 12-bit DAC and current-sense amplifier offset nulling. Use Value: Maintains loop accuracy within ±0.2% FS over full temperature range due to predictable γZ and low rd. |
Use Scenario: Li-ion battery management IC monitoring cell voltage via resistive divider, using HZM2.0NBTR-E as threshold reference for low-voltage warning. IC Role / Device Role / Timing Role: Shunt reference establishing 2.0 V trip point for comparator input in undervoltage detection circuit. Use Value: Ensures consistent 2.8 V–3.0 V cell undervoltage flag across production units, enabled by Grade B voltage binning and NC pin isolation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener reference applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBZ5221BS-7-F (Diodes Inc.) | Zener voltage 2.0 V (1.9–2.1 V), 200 mW, SOT-23 package, rd = 150 Ω @ 20 mA - higher test current, looser tolerance. | Higher IZ test condition shifts operating point; less suitable for ultra-low-current bias networks. | Select when SOT-23 footprint is required and 150 Ω rd is acceptable for target load regulation. |
| BZX84-C2V0 (Nexperia) | Zener voltage 2.0 V (1.8–2.2 V), 250 mW, SOT-23, rd = 100 Ω @ 5 mA - tighter VZ min/max but higher Pd and different thermal profile. | Higher power rating increases board-level thermal mass requirements; not drop-in due to different pinout (Anode/Cathode swapped vs. HZM2.0NBTR-E). | Prefer for higher-power reference designs where SOT-23 layout exists and pin 2/cathode orientation matches. |
Compared with MMBZ5221BS-7-F and BZX84-C2V0, the HZM2.0NBTR-E offers superior voltage tightness at low test current (5 mA), guaranteed NC pin for noise-sensitive layouts, and MPAK package compatibility with fine-pitch high-density routing - making it optimal for space-constrained, low-quiescent-current reference designs.
Availability
HZM2.0NBTR-E is available at Aetrix Electronics and suitable for portable sensor reference, microcontroller ADC biasing, and industrial signal conditioning requiring stable component supply, RoHS-compliant sourcing, and traceable lot documentation.
Supply support for HZM2.0NBTR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog, and power devices, with headquarters in Tokyo and design centers worldwide.
The HZM-N Series is part of Renesas' discrete Zener portfolio engineered for precision voltage stabilization in space-constrained, low-power industrial and consumer systems - emphasizing tight voltage tolerance, thermal stability, and high-reliability packaging.
FAQ
What is the exact zener voltage range for HZM2.0NBTR-E at 5 mA test current?
The HZM2.0NBTR-E has a guaranteed zener voltage range of 1.90 V to 2.20 V when tested at IZ = 5 mA and Ta = 25°C, per Grade B specification in the Renesas R07DS0358EJ0600 datasheet. This 300 mV window reflects factory binning for 2.0 V nominal stabilization, and the value remains stable under pulse testing (Pw = 40 ms) to minimize self-heating effects during characterization. The HZM2.0NBTR-E achieves this tolerance without external trimming.
Does HZM2.0NBTR-E have a functional third pin, and how should Pin 1 be handled?
Pin 1 of the HZM2.0NBTR-E is explicitly designated "NC" (No Connect) in the official pin arrangement diagram and must remain electrically unconnected - neither grounded nor routed. It is an unused terminal within the MPAK package, included for mechanical symmetry and mold alignment. Connecting Pin 1 risks compromising device reliability or altering thermal behavior, as confirmed in the Renesas datasheet Figure "Pin Arrangement (Top View)". The HZM2.0NBTR-E functions correctly using only Pins 2 (Anode) and 3 (Cathode).
What is the maximum reverse current specification for HZM2.0NBTR-E, and under what condition is it measured?
The HZM2.0NBTR-E specifies a maximum reverse current (IR) of 120 µA, measured at a reverse voltage (VR) of 0.5 V and ambient temperature of 25°C. This parameter quantifies leakage below the zener knee and directly impacts quiescent current in battery-powered applications. The value is verified per the Electrical Characteristics table in the Renesas datasheet R07DS0358EJ0600, and applies strictly to the stated test condition - not at higher VR or elevated temperature.
How does the temperature coefficient of HZM2.0NBTR-E affect its performance in a 0°C to 70°C operating range?
The HZM2.0NBTR-E exhibits a temperature coefficient (γZ) of −0.07 mV/°C near 2.0 V, meaning its zener voltage decreases by approximately 4.9 mV across a 70°C span (70 × 0.07). Over 0°C to 70°C, the total drift is bounded within ±2.5 mV relative to 25°C nominal, enabling sub-0.15% reference stability without compensation. This behavior is documented in Figure 2 ("Temperature Coefficient vs. Zener Voltage") of the R07DS0358EJ0600 datasheet and is intrinsic to the device's silicon epitaxial structure.
Is HZM2.0NBTR-E suitable for use in automotive under-hood applications?
The HZM2.0NBTR-E is rated for junction temperatures up to 150°C and storage temperatures from −55°C to +150°C, satisfying under-hood thermal requirements. However, Renesas classifies the HZM-N Series as "Standard" quality grade - intended for computers, office equipment, and industrial robots, not automotive safety-critical or high-reliability transportation systems per their quality grade notice (Section 7 of R07DS0358EJ0600). For automotive use, formal qualification per AEC-Q101 and manufacturer written consent would be required; the HZM2.0NBTR-E alone does not meet automotive-grade compliance out-of-box.
HZM2.0NBTR-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZM2.0NBTR-E FAQ
1.How can I place an order for HZM2.0NBTR-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZM2.0NBTR-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZM2.0NBTR-E reliable?
The price and inventory of HZM2.0NBTR-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZM2.0NBTR-E is usually 5 days.
3.What payment methods are accepted for HZM2.0NBTR-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZM2.0NBTR-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZM2.0NBTR-E?
HZM2.0NBTR-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZM2.0NBTR-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZM2.0NBTR-E?
For technical support, including HZM2.0NBTR-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZM2.0NBTR-E requirements.
6.How does Aetrix verify that HZM2.0NBTR-E is sourced from the original manufacturer or authorized distributors?
All HZM2.0NBTR-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZM2.0NBTR-E meets industry standards.
7.What is the process for return or replacement of HZM2.0NBTR-E?
All HZM2.0NBTR-E units undergo pre-shipment inspection (PSI). If there is an issue with HZM2.0NBTR-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZM2.0NBTR-E part is unused and in its original packaging.
Return procedure for HZM2.0NBTR-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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