Renesas HZM22NB3TL-E

Overview

HZM22NB3TL-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits. It delivers a nominal zener voltage of 22.23 V to 23.17 V at 5 mA test current, with dynamic resistance of 55 Ω, power dissipation rating of 200 mW, and junction temperature limit of 150 °C - suitable for voltage regulation in sensor signal conditioning and microcontroller reference supplies.

For engineers reviewing the HZM22NB3TL-E datasheet, HZM22NB3TL-E pinout, HZM22NB3TL-E application, or HZM22NB3TL-E equivalent, key selection criteria include zener voltage tolerance (±2.1% typical), low temperature coefficient (≈+0.04 mV/°C near 22 V), MPAK surface-mount package compatibility, and stable reverse current performance below 2 µA at 17 V.

Technical Context

The HZM22NB3TL-E operates as a two-terminal shunt regulator, maintaining stable output voltage across varying load currents by conducting excess current to ground when input exceeds its zener threshold. Its epitaxial planar structure ensures tight voltage distribution and repeatable breakdown characteristics.

Designed for DC biasing and voltage reference use, it exhibits a positive temperature coefficient (~+0.04 mV/°C) in the 22 V range, enabling predictable drift compensation in temperature-sensitive designs. The device is rated for 2 µA maximum reverse current at VR = 17 V and supports pulse-tested operation with 40 ms pulse width per JEDEC standards.

Key Specifications

Pinout & Package

Package: MPAK (JEITA code PLSP0003ZC-A), surface-mount, 3-pin configuration with exposed pad thermal path; dimensions 2.7 × 1.35 × 0.95 mm (L × W × H), mass 0.011 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with BZX84-C22LT1G and MMSZ5247B-TP, the HZM22NB3TL-E offers tighter voltage tolerance, lower dynamic resistance, and optimized thermal profile in a compact MPAK package - making it preferable for space-constrained, high-accuracy analog reference designs where long-term stability is prioritized over raw power handling.

Availability

HZM22NB3TL-E is available at Aetrix Electronics and suitable for industrial sensor reference, microcontroller ADC reference rail, and low-power analog front-end biasing requiring stable component supply, consistent grading, and RoHS-compliant packaging.

Supply support for HZM22NB3TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, and power devices for industrial, automotive, and infrastructure markets.

The HZM-N Series was developed specifically for high-accuracy, low-drift voltage stabilization in space-constrained analog systems - emphasizing tight grading, stable temperature coefficients, and robust surface-mount packaging for automated manufacturing.

FAQ

What is the exact zener voltage range for HZM22NB3TL-E at 5 mA test current?

The HZM22NB3TL-E has a guaranteed zener voltage range of 22.23 V to 23.17 V when tested at I_Z = 5 mA and T_a = 25 °C. This corresponds to Grade B3 specification per Renesas datasheet R07DS0358EJ0600, providing ±2.1% tolerance around the nominal 22.6 V center point. The value is validated using pulse testing (40 ms pulse width) to ensure repeatability under real-world bias conditions.

Does HZM22NB3TL-E have a connected pin 1, and what is its function?

No, pin 1 of the HZM22NB3TL-E is designated NC (No Connect) and is internally unconnected. Per the official Renesas pin arrangement diagram, only pins 2 (Anode) and 3 (Cathode) are electrically active. Pin 1 must remain unconnected on the PCB - neither routed nor soldered - to avoid mechanical stress or unintended parasitic coupling that could affect voltage regulation stability.

What is the maximum reverse current specification for HZM22NB3TL-E, and at what voltage is it measured?

The HZM22NB3TL-E specifies a maximum reverse current (I_R) of 2 µA, measured at V_R = 17 V and T_a = 25 °C. This low leakage ensures minimal loading on high-impedance nodes, such as op-amp bias networks or ADC reference dividers. The value is confirmed in the Electrical Characteristics table on page 3 of the Renesas datasheet R07DS0358EJ0600.

Can HZM22NB3TL-E be used in place of older HZM22N variants, and what changes are required?

The HZM22NB3TL-E replaces earlier HZM22N versions with tighter Grade B3 voltage tolerance (22.23–23.17 V vs. broader B-grade 22.0–24.0 V), identical MPAK package, and same pinout. No PCB layout or schematic changes are needed - it is a direct drop-in upgrade for improved accuracy and reduced binning overhead in production calibration. Renesas confirms backward compatibility in ordering documentation.

What is the temperature coefficient of HZM22NB3TL-E, and how does it impact circuit design?

The HZM22NB3TL-E exhibits a typical temperature coefficient (γ_Z) of +0.04 mV/°C near 22 V, as shown in Figure 2 of the Renesas datasheet. This low, positive drift allows predictable voltage increase with temperature - enabling simple first-order compensation in reference designs. For example, over a –40 °C to +85 °C range, total drift remains within ±5.0 mV, supporting 12-bit system accuracy without active compensation circuitry.