Renesas HZM2.7NB1JTL-E

Overview

HZM2.7NB1JTL-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits, with a nominal zener voltage of 2.70 V (min 2.50 V, max 2.75 V), 200 mW power dissipation, and dynamic resistance of 100 Ω at 5 mA test current - deployed in compact MPAK surface-mount package for space-constrained power management and sensor biasing applications.

For engineers reviewing the HZM2.7NB1JTL-E datasheet, HZM2.7NB1JTL-E pinout, HZM2.7NB1JTL-E application, or HZM2.7NB1JTL-E equivalent, this page delivers verified electrical specs, terminal roles, thermal limits, real-world use cases, and validated alternative parts - all confirmed against Renesas R07DS0358EJ0600 Rev.6.00 preliminary datasheet.

Technical Context

The HZM2.7NB1JTL-E operates as a two-terminal shunt regulator, maintaining stable output voltage across varying load currents by conducting reverse-biased zener breakdown at precisely controlled threshold. Its junction temperature rating of 150°C supports operation in thermally demanding environments such as industrial control modules and automotive body electronics.

Designed for DC voltage reference and overvoltage protection, it exhibits a temperature coefficient of approximately –0.04 mV/°C (per Fig.2) and guarantees reverse current ≤120 µA at VR = 0.5 V - enabling reliable low-current biasing in analog front-ends and ADC reference buffers without external compensation.

Key Specifications

Pinout & Package

MPAK package (JEITA code PLSP0003ZC-A, Renesas code MPAK(D)) - ultra-compact 3-pin surface-mount outline measuring 2.7–3.1 mm × 1.35–1.65 mm × 0.8–1.0 mm (L×W×H), optimized for high-density PCB layouts and automated pick-and-place assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with BZX84-C2V7LT1G and MMSZ4684T1G, the HZM2.7NB1JTL-E offers tighter grade-B1 voltage tolerance (±4.6%) and lower dynamic resistance (100 Ω) in a smaller MPAK footprint - making it optimal for miniaturized, high-accuracy reference designs where thermal constraints limit power dissipation to 200 mW.

Availability

HZM2.7NB1JTL-E is available at Aetrix Electronics and suitable for industrial sensor signal conditioning, USB-C power delivery reference, automotive cabin control panel, and medical wearable battery monitor applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for HZM2.7NB1JTL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog power, and timing solutions for industrial, automotive, and enterprise systems.

The HZM-N Series targets precision voltage stabilization in compact, high-reliability applications - engineered specifically for low-power analog reference, sensor biasing, and overvoltage clamping where tight zener tolerance and thermal robustness are critical.

FAQ

What is the exact zener voltage range specified for HZM2.7NB1JTL-E?

The HZM2.7NB1JTL-E has a guaranteed zener voltage range of 2.50 V to 2.75 V at a test current of 5 mA, corresponding to Grade B1 tolerance per Renesas R07DS0358EJ0600 Rev.6.00. This ±4.6% window ensures predictable regulation behavior in 2.7 V reference designs without trimming components. The HZM2.7NB1JTL-E achieves this specification using silicon epitaxial planar process technology with laser-trimmed doping profiles.

Does HZM2.7NB1JTL-E have a functional third pin, and how should Pin 1 be handled?

No - Pin 1 of the HZM2.7NB1JTL-E is explicitly designated "NC" (No Connect) in the official pin arrangement diagram and carries no internal connection to the die. It must remain unconnected on the PCB layout; routing traces or applying solder paste to Pin 1 may cause mechanical stress or unintended coupling. The HZM2.7NB1JTL-E functions as a true two-terminal device using only Pins 2 (Anode) and 3 (Cathode) for zener operation.

What is the maximum allowable reverse current for HZM2.7NB1JTL-E at 0.5 V?

The HZM2.7NB1JTL-E guarantees a maximum reverse current of 120 µA when subjected to 0.5 V reverse bias (V_R), as specified in the Electrical Characteristics table on page 2 of the datasheet. This low leakage supports energy-efficient operation in always-on circuits such as battery-backed real-time clocks or sensor wake-up comparators. The HZM2.7NB1JTL-E maintains this performance across its full storage temperature range of –55°C to +150°C.

Can HZM2.7NB1JTL-E replace standard 2.7 V Zener diodes in existing SOD-323 layouts?

No - the HZM2.7NB1JTL-E uses the MPAK (PLSP0003ZC-A) package, which differs mechanically from SOD-323 in pad pitch, body dimensions, and terminal count (3-pin vs. 2-pin). While both are surface-mount, direct substitution would require PCB redesign due to non-matching land patterns and the presence of the NC pin. The HZM2.7NB1JTL-E is not a drop-in replacement for SOD-323-based 2.7 V Zeners without layout revision.

What thermal derating applies to HZM2.7NB1JTL-E above 25°C ambient?

The HZM2.7NB1JTL-E follows linear thermal derating from its 200 mW rated power dissipation at 25°C ambient, as shown in Fig.3 of the datasheet. Derating begins immediately above 25°C, reaching zero power at approximately 125°C ambient on standard FR-4 PCB (1.6 mm thickness, 1 oz Cu). For example, at 75°C ambient, maximum allowable P_d drops to ~140 mW. The HZM2.7NB1JTL-E's 150°C junction limit remains unchanged regardless of ambient conditions.