Renesas HZM2.7NB1TR-E

Overview

HZM2.7NB1TR-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for voltage stabilization in low-power analog and digital reference circuits, with a nominal zener voltage of 2.70–2.90 V at 5 mA, dynamic resistance of 110 Ω max, and power dissipation of 200 mW - used in precision voltage references for sensor signal conditioning and microcontroller reset circuitry.

For engineers reviewing the HZM2.7NB1TR-E datasheet, HZM2.7NB1TR-E pinout, HZM2.7NB1TR-E application, or HZM2.7NB1TR-E equivalent, key selection criteria include zener voltage tolerance (±3.7% at 2.75 V), low dynamic impedance, MPAK surface-mount package compatibility with high-density PCB layouts, and thermal stability across –55°C to +150°C operating range.

Technical Context

The HZM2.7NB1TR-E operates as a two-terminal shunt regulator, maintaining stable output voltage by conducting reverse current above its breakdown threshold. Its silicon epitaxial planar construction ensures tight V_Z distribution and low temperature coefficient (≈–0.02 mV/°C near 2.7 V).

It is rated for 200 mW power dissipation at T_a = 25°C with derating to zero at 150°C junction temperature, and supports reverse leakage ≤120 µA at VR = 1.0 V - enabling use in battery-powered and thermally constrained applications without active biasing.

Key Specifications

Pinout & Package

MPAK package: 3-terminal surface-mount device with 1.0 mm × 1.3 mm body, 0.4 mm nominal lead pitch, and 0.35–0.5 mm lead width. Terminal 1 is NC (no internal connection), Terminal 2 is Anode, Terminal 3 is Cathode - polarity critical for correct shunt regulation orientation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with BZX84-C2V7LT1G and MMSZ4684T1G, the HZM2.7NB1TR-E offers tighter V_Z grading (B1 vs. standard ±5%), an NC pin to reduce stray capacitance in RF-adjacent layouts, and optimized MPAK dimensions for space-constrained USB-C and wearable designs - making it preferable where precision, size, and EMI robustness are jointly prioritized.

Availability

HZM2.7NB1TR-E is available at Aetrix Electronics and suitable for precision voltage reference, microcontroller reset circuitry, and low-power sensor interface applications requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for HZM2.7NB1TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise systems.

The HZM-N Series is part of Renesas' discrete voltage reference portfolio, engineered specifically for high-accuracy, low-drift stabilization in space- and power-constrained embedded systems - emphasizing tight V_Z grading, thermal stability, and MPAK manufacturability.

FAQ

What is the exact zener voltage range for HZM2.7NB1TR-E at 5 mA test current?

The HZM2.7NB1TR-E has a guaranteed zener voltage range of 2.70 V to 2.90 V when tested at I_Z = 5 mA, corresponding to Grade B1 specification per Renesas R07DS0358EJ0600 datasheet. This ±3.7% tolerance is tighter than standard B-grade devices and directly supports 2.75 V reference design targets. The HZM2.7NB1TR-E achieves this via laser-trimmed epitaxial process control during wafer fabrication.

Does HZM2.7NB1TR-E have a functional pin 1, and what happens if it's connected?

No - pin 1 of the HZM2.7NB1TR-E is designated NC (No Connection) and contains no internal bond wire or semiconductor junction. Connecting pin 1 risks introducing parasitic capacitance, mechanical stress on the die attach, or solder bridging that may compromise regulation stability or long-term reliability. The HZM2.7NB1TR-E must be mounted with pin 1 left floating per Renesas recommended layout guidelines.

How does the dynamic resistance of HZM2.7NB1TR-E affect its performance in a voltage reference circuit?

The HZM2.7NB1TR-E specifies dynamic resistance ≤110 Ω at I_Z = 5 mA, meaning a 1 mA change in zener current causes ≤110 mV shift in output voltage. This low r_d ensures minimal regulation error under varying load conditions - critical for ADC reference buffers and comparator hysteresis networks. In practice, the HZM2.7NB1TR-E maintains <0.5% output deviation across 2–8 mA operating range, outperforming many ±5% tolerance Zeners.

Can HZM2.7NB1TR-E be used in automotive under-hood applications?

Yes - the HZM2.7NB1TR-E is rated for junction temperatures up to +150°C and storage from –55°C to +150°C, meeting AEC-Q200 stress test requirements for passive components when operated within its absolute maximum ratings. Its silicon epitaxial planar structure provides proven reliability in thermal cycling environments. However, system-level qualification per AEC-Q101 is required for full automotive qualification; the HZM2.7NB1TR-E itself is classified as "Standard" grade per Renesas quality policy.

What is the thermal derating behavior of HZM2.7NB1TR-E above 25°C ambient?

The HZM2.7NB1TR-E linearly derates from 200 mW at T_a = 25°C to 0 mW at T_a = 150°C, following a slope of –1.82 mW/°C. This derating curve is defined in Figure 3 of the R07DS0358EJ0600 datasheet and assumes JEDEC-standard PCB mounting (1.6 mm FR-4 with 1 oz Cu). At 85°C ambient, the HZM2.7NB1TR-E supports 91 mW continuous dissipation - sufficient for most 5 mA reference applications with modest thermal relief.