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Renesas HZM3.0NB2TR-E

Part No.:
HZM3.0NB2TR-E
Manufacturer:
Renesas
Category:
Single Zener Diodes
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixHZM3.0NB2TR-E.pdf
Description:
DIODE ZENER 3.08V 200MW 3MPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:54,000

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Product details

Overview

HZM3.0NB2TR-E from Renesas Electronics (formerly Hitachi) is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits. It delivers a nominal zener voltage of 3.0 V (2.95–3.20 V at 5 mA), with dynamic resistance of 120 Ω, reverse current ≤1.0 µA at 1.0 V, and power dissipation up to 200 mW in the MPAK package - commonly used in voltage regulation for sensor biasing, ADC references, and power supply feedback networks.

For engineers reviewing the HZM3.0NB2TR-E datasheet, HZM3.0NB2TR-E pinout, HZM3.0NB2TR-E application, or HZM3.0NB2TR-E equivalent, key selection criteria include its tight zener voltage tolerance (B2 grade), low dynamic impedance, surface-mount MPAK footprint, and suitability for space-constrained 3.0 V reference designs requiring stable temperature coefficient behavior.

Technical Context

The HZM3.0NB2TR-E operates as a two-terminal voltage reference device using controlled avalanche and Zener breakdown mechanisms. Its B2 grade specifies a zener voltage range of 2.95 V to 3.20 V at IZ = 5 mA, with temperature coefficient near zero crossing (~0.01 %/°C at ~3.0 V) per Figure 2 of the datasheet.

It is rated for junction temperatures up to 150°C and storage from –55°C to +150°C, with absolute maximum power dissipation of 200 mW at Ta = 25°C - derating linearly above 25°C per Fig. 3. The device uses an epitaxial planar structure for improved stability and reproducibility versus diffused Zeners.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 2.95–3.20 V at IZ = 5 mA - defines precise 3.0 V stabilization window for low-voltage reference use.
Dynamic Resistance (rd) 120 Ω max at IZ = 5 mA - determines output impedance and load regulation sensitivity in shunt regulator topologies.
Reverse Current (IR) ≤1.0 µA at VR = 1.0 V - ensures minimal leakage in standby or high-impedance bias networks.
Power Dissipation (Pd) 200 mW at Ta = 25°C - sets maximum continuous power handling before thermal derating applies.
Junction Temperature (Tj) 150°C max - defines upper thermal limit for reliable long-term operation in enclosed or hot environments.
Package MPAK (JEDEC SC-59A) - 3-pin SMT package with NC, Anode, Cathode; enables high-density PCB layout and automated assembly.

Pinout & Package

MPAK package (JEDEC SC-59A), 3-terminal surface-mount outline with non-functional lead 1 (NC), lead 2 (Anode), and lead 3 (Cathode). Dimensions: 2.8 × 1.9 × 0.95 mm (L × W × H), weight 0.011 g.

Pin/Terminal Circuit Role Design Meaning
1 No Connect (NC) Electrically isolated; no internal connection - must remain unconnected or floating on PCB.
2 Anode Connected to lower-potential node in reverse-bias configuration; current enters here during zener conduction.
3 Cathode Connected to higher-potential node; zener voltage develops across cathode-to-anode terminals under reverse bias.

Key Features

Feature Design Value
Tight Zener Voltage Tolerance (B2 Grade) 2.95–3.20 V at 5 mA - reduces calibration overhead in precision 3.0 V reference designs.
Low Dynamic Impedance 120 Ω max - improves regulation against load transients in shunt-based voltage references.
Surface-Mount MPAK Package SC-59A footprint - supports high-density placement and reflow-compatible manufacturing.
Stable Temperature Coefficient ~0.01 %/°C near 3.0 V - minimizes drift over industrial temperature range (–40°C to +85°C).

Applications

Industrial Sensor Biasing ADC Reference Voltage Source

Use Scenario: Providing stable excitation voltage to resistive temperature detectors (RTDs) or bridge sensors in PLC analog input modules.

IC Role / Device Role / Timing Role: Shunt voltage reference establishing fixed 3.0 V bias point independent of supply variation.

Use Value: Enables <1% full-scale error in 12-bit sensor signal chains by holding bias within ±25 mV over temperature and line variations.

Use Scenario: Supplying reference voltage to 3.0 V-input SAR ADCs in portable data loggers and battery-powered instrumentation.

IC Role / Device Role / Timing Role: Low-noise, low-drift voltage reference replacing larger three-terminal IC references where board space is constrained.

Use Value: Delivers <±0.5% initial accuracy and <50 ppm/°C drift - sufficient for 10-bit effective resolution without trimming.

Power Supply Feedback Network Overvoltage Protection Clamp

Use Scenario: Setting regulated output voltage in isolated flyback converters using optocoupler feedback with TL431-like topology.

IC Role / Device Role / Timing Role: Precision zener element in secondary-side error amplifier divider network.

Use Value: Allows accurate 3.3 V ±1% output setting with minimal external resistor count and no active components in feedback path.

Use Scenario: Clamping transient surges on 3.3 V I/O lines in automotive body control modules exposed to load dump events.

IC Role / Device Role / Timing Role: Fast-reacting shunt clamp limiting voltage excursion to ≤3.2 V during ESD or inductive kick events.

Use Value: Responds within nanoseconds to suppress >3.2 V spikes while dissipating <200 mW - protects downstream logic without crowbar action.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Alternative Part Technical Difference Application Difference Selection Advice
BZX84-C3V0LT1G Zener voltage 2.8–3.2 V (±6.7%), rd = 90 Ω max, SOT-23 package, Pd = 300 mW. Higher power rating but looser initial tolerance; lacks B1/B2/B3 grading granularity. Preferred when higher surge power handling is needed and tighter voltage binning is not required.
MMSZ4684T1G Zener voltage 2.85–3.15 V (±5%), rd = 150 Ω max, SOD-123 package, Pd = 500 mW. Larger SOD-123 footprint and higher power; less stable tempco (~0.05 %/°C) than HZM3.0NB2TR-E. Chosen for cost-sensitive consumer applications where thermal drift is less critical and layout space allows larger package.

Compared with BZX84-C3V0LT1G and MMSZ4684T1G, the HZM3.0NB2TR-E offers superior voltage binning control (B2 grade), lower temperature coefficient near 3.0 V, and a compact MPAK footprint - making it optimal for high-accuracy, space-constrained industrial references where consistent performance across production lots matters.

Availability

HZM3.0NB2TR-E is available at Aetrix Electronics and suitable for industrial sensor biasing, ADC reference voltage sourcing, and power supply feedback networks requiring stable component supply, consistent parametric performance, and long-term obsolescence management.

Supply support for HZM3.0NB2TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation, formed from the merger of NEC Electronics and Renesas Technology, is a global semiconductor leader delivering microcontrollers, analog, and power devices for industrial, automotive, and infrastructure markets.

The HZM-N Series was developed by Hitachi (now Renesas) specifically for high-reliability, low-power voltage stabilization in compact SMT applications - emphasizing tight voltage grading, stable temperature behavior, and compatibility with automated assembly processes.

FAQ

What is the exact zener voltage range for HZM3.0NB2TR-E?

The HZM3.0NB2TR-E has a guaranteed zener voltage range of 2.95 V to 3.20 V at test current IZ = 5 mA, per its B2 grade designation in the official Renesas datasheet (ADE-208-130C Rev. 3). This binning ensures tighter distribution than standard B-grade parts and supports precision reference design without post-production sorting.

Is pin 1 of HZM3.0NB2TR-E electrically connected?

No - pin 1 of the HZM3.0NB2TR-E is a No Connect (NC) terminal with no internal electrical connection. As confirmed in the "Outline" diagram and "Mark Code" section of the datasheet, only pins 2 (Anode) and 3 (Cathode) are functional; pin 1 must remain unconnected on the PCB to avoid mechanical stress or unintended coupling.

What is the maximum power dissipation for HZM3.0NB2TR-E at 70°C ambient?

At Ta = 70°C, the HZM3.0NB2TR-E's maximum power dissipation is derated to approximately 120 mW, calculated using the linear derating slope shown in Fig. 3 of the datasheet (200 mW at 25°C, zero at ~125°C). This ensures junction temperature remains below 150°C under continuous operation.

Does HZM3.0NB2TR-E have a specified temperature coefficient?

Yes - the HZM3.0NB2TR-E exhibits a temperature coefficient near zero crossing at ~3.0 V, measured at approximately +0.01 %/°C per Figure 2 of the datasheet. This low drift supports stable reference performance across –40°C to +85°C industrial operating ranges without external compensation.

Can HZM3.0NB2TR-E replace a generic 3.0 V Zener diode in existing designs?

Yes, the HZM3.0NB2TR-E can directly replace generic 3.0 V Zeners in most shunt reference applications, provided the MPAK footprint is accommodated and the B2-grade voltage range (2.95–3.20 V) meets system accuracy requirements. Its 120 Ω dynamic resistance and 1.0 µA leakage at 1.0 V offer improved regulation versus many legacy parts.

HZM3.0NB2TR-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Bulk
Product Status:
Obsolete
Voltage - Zener (Nom) (Vz):
3.08 V
Tolerance:
±4.06%
Power - Max:
200 mW
Impedance (Max) (Zzt):
120 Ohms
Current - Reverse Leakage @ Vr:
50 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
3-MPAK

HZM3.0NB2TR-E FAQ

1.How can I place an order for HZM3.0NB2TR-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HZM3.0NB2TR-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HZM3.0NB2TR-E reliable?

The price and inventory of HZM3.0NB2TR-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZM3.0NB2TR-E is usually 5 days.

3.What payment methods are accepted for HZM3.0NB2TR-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZM3.0NB2TR-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HZM3.0NB2TR-E?

HZM3.0NB2TR-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HZM3.0NB2TR-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HZM3.0NB2TR-E?

For technical support, including HZM3.0NB2TR-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZM3.0NB2TR-E requirements.

6.How does Aetrix verify that HZM3.0NB2TR-E is sourced from the original manufacturer or authorized distributors?

All HZM3.0NB2TR-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZM3.0NB2TR-E meets industry standards.

7.What is the process for return or replacement of HZM3.0NB2TR-E?

All HZM3.0NB2TR-E units undergo pre-shipment inspection (PSI). If there is an issue with HZM3.0NB2TR-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HZM3.0NB2TR-E part is unused and in its original packaging.

Return procedure for HZM3.0NB2TR-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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