Renesas HZM30NBTR-E

Overview

HZM30NBTR-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits, with a nominal zener voltage of 30 V (min 28.0 V, max 32.0 V), 2 mW reverse current test condition, 23 Ω dynamic resistance at 2 mA, 200 mW power dissipation, and MPAK surface-mount package.

For engineers reviewing the HZM30NBTR-E datasheet, HZM30NBTR-E pinout, HZM30NBTR-E application, or HZM30NBTR-E equivalent, this device serves as a compact, temperature-stable voltage reference in power supply feedback loops, sensor biasing networks, and overvoltage protection clamps where tight V_Z tolerance and low dynamic impedance are required.

Technical Context

The HZM30NBTR-E operates as a two-terminal shunt regulator, maintaining stable output voltage across its cathode-anode terminals under varying load and input conditions. Its zener breakdown mechanism relies on controlled avalanche conduction, with temperature coefficient γ_Z ≈ +0.05 mV/°C (per Fig.2 at ~30 V), enabling predictable drift behavior in ambient ranges from –55°C to +150°C.

Designed for high-density PCB assembly, it uses a three-terminal MPAK package with Pin 1 (NC), Pin 2 (Anode), and Pin 3 (Cathode) - the NC terminal provides mechanical stability without electrical function. Absolute maximum ratings include 150°C junction temperature and 200 mW power dissipation derated linearly above 25°C ambient (Fig.3).

Key Specifications

Pinout & Package

MPAK package (JEITA code PLSP0003ZC-A) features a compact 3-pin SMT outline with 1.0 mm lead pitch, 0.35–0.5 mm pin width, and 0.65 mm terminal length. Pin 1 is unconnected (NC) for mechanical reinforcement; Pins 2 and 3 carry functional anode and cathode terminals respectively.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with BZX84-C30LT1G and MMBZ5257BLT1G, the HZM30NBTR-E offers tighter V_Z grading (28.0–32.0 V vs. ±5%), lower leakage (2 μA vs. 100 nA–1 μA), and MPAK's smaller footprint - making it optimal for space-constrained, low-bias, high-stability applications where absolute regulation accuracy matters more than peak power handling.

Availability

HZM30NBTR-E is available at Aetrix Electronics and suitable for switch-mode power supply feedback, sensor signal conditioning, overvoltage clamp protection, and ADC reference stabilization requiring stable component supply, consistent lot-to-lot parametric performance, and RoHS-compliant packaging.

Supply support for HZM30NBTR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog mixed-signal devices, and power management ICs, with headquarters in Tokyo and design centers worldwide.

The HZM-N Series belongs to Renesas' discrete Zener diode product line, engineered specifically for high-accuracy voltage stabilization in compact, thermally demanding, and high-reliability industrial and consumer electronics applications.

FAQ

What is the zener voltage tolerance of HZM30NBTR-E?

The HZM30NBTR-E has a zener voltage range of 28.0 V to 32.0 V at I_Z = 2 mA, corresponding to a ±6.7% tolerance about the nominal 30 V rating. This grade-B specification is confirmed in the Electrical Characteristics table on page 2 of R07DS0358EJ0600 Rev.6.00, and applies across the full operating temperature range.

Does HZM30NBTR-E have a functional third pin?

No - Pin 1 of the HZM30NBTR-E is designated NC (No Connect) and serves only as a mechanical anchor in the MPAK package. It must remain electrically unconnected in PCB layout and schematic; only Pins 2 (Anode) and 3 (Cathode) perform active circuit functions per the Pin Arrangement diagram on page 1.

What is the maximum power dissipation for HZM30NBTR-E at 75°C ambient?

Per Fig.3 in the datasheet, the HZM30NBTR-E's power dissipation derates linearly from 200 mW at 25°C to zero at 150°C. At 75°C ambient, the allowable P_d is 133 mW - calculated as 200 mW × (1 − (75−25)/125) = 133 mW. This must be respected to avoid exceeding the 150°C junction limit.

Is HZM30NBTR-E suitable for use as an ADC reference in battery-powered systems?

Yes - the HZM30NBTR-E draws only 2 μA reverse leakage at 23 V and exhibits low dynamic resistance (80 Ω), making it viable for low-power ADC reference buffering when paired with an op-amp follower. Its +0.05 mV/°C tempco also supports stable operation across typical battery-operated temperature ranges without external compensation.

How does the temperature coefficient of HZM30NBTR-E compare to lower-voltage Zeners in the same series?

At ~30 V, the HZM30NBTR-E exhibits a positive temperature coefficient of approximately +0.05 mV/°C (per Fig.2), which is typical for mid-range Zener voltages. In contrast, lower-voltage types like HZM5.1N show negative tempcos (≈ –0.02 mV/°C), while higher-voltage variants (e.g., HZM36N) trend toward +0.09 mV/°C - confirming the HZM30NBTR-E's stable, predictable drift behavior in precision references.