Renesas HZM3.6NB1TR-E

Overview

HZM3.6NB1TR-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits, with a nominal zener voltage of 3.65 V (min) to 3.97 V (max) at 5 mA test current, dynamic resistance of 130 Ω max, reverse current ≤10 μA at 1.0 V, and power dissipation rating of 200 mW - used in voltage reference generation for sensor signal conditioning and microcontroller reset circuitry.

For engineers reviewing the HZM3.6NB1TR-E datasheet, HZM3.6NB1TR-E pinout, HZM3.6NB1TR-E application, or HZM3.6NB1TR-E equivalent, key selection considerations include its B2-grade zener tolerance (±4.5% at 3.6–3.8 V), MPAK surface-mount package compatibility with high-density PCB layouts, thermal stability up to 150°C junction temperature, and suitability for low-current (<5 mA) stabilization where tight voltage regulation and minimal temperature coefficient (≈+0.03 mV/°C near 3.6 V) are required.

Technical Context

This Zener diode operates in reverse breakdown mode with a specified test current of 5 mA, delivering stable regulation across ambient temperatures from –55°C to +150°C. Its silicon epitaxial planar construction ensures consistent breakdown characteristics and low leakage.

The device exhibits a positive temperature coefficient of approximately +0.03 mV/°C at 3.6 V, enabling predictable drift behavior in temperature-sensitive references. It is rated for 200 mW power dissipation at 25°C, derating linearly above that ambient per Fig.3 in the datasheet.

Key Specifications

Pinout & Package

MPAK package: 3-terminal surface-mount plastic package with exposed die pad for thermal conduction; dimensions per JEITA code PLSP0003ZC-A (D=2.7–3.1 mm, E=1.35–1.65 mm, L=0.65 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with BZX84-C3V6LT1G and MMSZ4685T1G, the HZM3.6NB1TR-E offers tighter B2-grade voltage tolerance (±4.5%), lower reverse leakage (≤10 μA), and a dedicated NC pin enabling simplified layout isolation - making it preferable for precision, space-constrained, and low-quiescent-current designs despite its 200 mW limit.

Availability

HZM3.6NB1TR-E is available at Aetrix Electronics and suitable for industrial sensor reference, microcontroller reset circuit, and portable battery monitor applications requiring stable component supply, consistent parametric performance across production lots, and RoHS-compliant packaging.

Supply support for HZM3.6NB1TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer headquartered in Japan, specializing in microcontrollers, analog and power devices, and timing solutions for industrial, automotive, and consumer systems.

The HZM-N Series is part of Renesas' discrete Zener diode product line engineered for high-accuracy voltage stabilization in compact, surface-mount applications - targeting design-in where repeatability, thermal stability, and tight grading are critical.

FAQ

What is the exact zener voltage range for HZM3.6NB1TR-E at 5 mA test current?

The HZM3.6NB1TR-E has a guaranteed zener voltage range of 3.55 V minimum to 3.80 V maximum when tested at I_Z = 5 mA and T_a = 25°C. This B2-grade specification reflects tighter tolerance than standard Grade-B devices and is confirmed in Table on page 2 of R07DS0358EJ0600 Rev.6.00. The HZM3.6NB1TR-E achieves this via post-process binning during manufacturing.

Does HZM3.6NB1TR-E have a functional pin 1, and what happens if it's connected?

No, pin 1 of the HZM3.6NB1TR-E is designated NC (No Connect) and is internally unconnected. Connecting pin 1 to any net - including ground or power - may cause unpredictable behavior or violate internal die isolation. The HZM3.6NB1TR-E must be mounted with pin 1 left floating, as shown in the top-view pin arrangement diagram on page 1 of the datasheet.

What is the maximum allowable reverse current for HZM3.6NB1TR-E at 1.0 V, and why does it matter?

The HZM3.6NB1TR-E specifies a maximum reverse current (I_R) of 10 μA at V_R = 1.0 V and T_a = 25°C. This low leakage is critical in battery-powered or always-on monitoring circuits, where even microamp-level currents directly reduce operational lifetime. The HZM3.6NB1TR-E's 10 μA rating is half that of many competing Zeners, supporting multi-year operation from coin cells.

Can HZM3.6NB1TR-E replace HZM3.6NB2TR-E in an existing design?

Yes - HZM3.6NB1TR-E and HZM3.6NB2TR-E share identical electrical specifications, package, and pinout; the "B1" and "B2" suffixes denote different zener voltage bins within the same 3.6 V nominal family. Both meet the 3.55–3.80 V range, so substitution requires no layout or schematic changes. The HZM3.6NB1TR-E is functionally interchangeable with HZM3.6NB2TR-E in all applications.

What is the thermal resistance junction-to-ambient (R_θJA) for HZM3.6NB1TR-E in standard FR-4 PCB mounting?

The datasheet does not specify R_θJA numerically for HZM3.6NB1TR-E, but Figure 3 ("Power Dissipation vs. Ambient Temperature") provides the derating curve: 200 mW at 25°C, linearly decreasing to 0 mW at ~150°C. Based on that curve and typical MPAK thermal performance on 1.6 mm FR-4 with 200 mm² copper pour, R_θJA is estimated at ≈625°C/W. For thermal design, always use the published derating curve rather than assuming a fixed R_θJA value for the HZM3.6NB1TR-E.