Renesas HZM3.9NB1TL-E

Overview

HZM3.9NB1TL-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and digital supply rails. It delivers a nominal zener voltage of 3.9 V (min 3.87 V, max 4.10 V) at 5 mA test current, with dynamic resistance of 130 Ω, power dissipation up to 200 mW, and operates within –55°C to +150°C storage temperature range - commonly used in voltage reference circuits for microcontroller reset supervision and sensor biasing.

For engineers reviewing the HZM3.9NB1TL-E datasheet, HZM3.9NB1TL-E pinout, HZM3.9NB1TL-E application, or HZM3.9NB1TL-E equivalent, key selection considerations include its MPAK package footprint, grade-B1 tolerance band (±2.5% typical), low leakage (<10 µA at 1.0 V reverse), and suitability for high-density surface-mount designs requiring stable 3.9 V regulation under transient load conditions.

Technical Context

This device uses a silicon epitaxial planar junction structure optimized for stable zener breakdown behavior at low currents (IZ = 5 mA). Its temperature coefficient is +0.03 mV/°C near 3.9 V, enabling predictable drift compensation in reference circuits.

The HZM3.9NB1TL-E is rated for 200 mW power dissipation at 25°C ambient, derating linearly above 25°C per Fig.3, and features a non-connected (NC) terminal that electrically isolates the die substrate contact - critical for noise-sensitive analog references where ground loop isolation matters.

Key Specifications

Pinout & Package

MPAK package: 3-terminal surface-mount plastic package with exposed pad thermal path; dimensions 1.0 mm × 1.3 mm × 0.55 mm (L × W × H); weight 0.011 g; JEITA code SC-59A.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with MMSZ4V3T1G and BZX84-C3V9, the HZM3.9NB1TL-E offers tighter grade-B1 voltage tolerance, lower dynamic resistance, and an NC pin for noise isolation - making it preferable for precision analog references despite its smaller MPAK footprint and lower power rating.

Availability

HZM3.9NB1TL-E is available at Aetrix Electronics and suitable for microcontroller reset supervision, sensor biasing, ADC reference division, and low-power IoT node regulation requiring stable component supply and consistent grade-B1 performance.

Supply support for HZM3.9NB1TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer headquartered in Japan, specializing in microcontrollers, analog power devices, and timing solutions for industrial, automotive, and consumer markets.

The HZM-N Series is part of Renesas' discrete Zener diode portfolio engineered for high-precision voltage stabilization in space-constrained, high-reliability applications - emphasizing tight voltage grading, low dynamic impedance, and robust thermal performance.

FAQ

What is the exact zener voltage range for HZM3.9NB1TL-E at 5 mA?

The HZM3.9NB1TL-E has a guaranteed zener voltage range of 3.87 V to 4.10 V when tested at I_Z = 5 mA and T_a = 25°C. This grade-B1 specification reflects ±2.5% tolerance around the nominal 3.9 V rating, confirmed in Table on page 2 of R07DS0358EJ0600 Rev.6.00.

Does HZM3.9NB1TL-E have a pin-compatible alternative in the same MPAK package?

No verified pin-compatible alternative exists in the identical MPAK (PLSP0003ZC-A) package with NC/anode/cathode pinout and grade-B1 3.9 V specification. Competing parts like BZX84-C3V9 use SOT-23 (3-pin, no NC), and MMSZ4V3T1G uses SOD-123 - both require PCB layout changes if substituted for HZM3.9NB1TL-E.

What is the role of Pin 1 (NC) on HZM3.9NB1TL-E, and can it be left floating?

Pin 1 is a non-connected terminal tied to the silicon substrate but electrically isolated from the zener junction. It must remain unconnected - neither grounded nor tied to any net - to preserve noise isolation and prevent unintended coupling. Leaving it floating per datasheet guidance is correct and required for optimal performance.

How does the dynamic resistance of HZM3.9NB1TL-E affect load regulation in a shunt configuration?

With a max dynamic resistance of 130 Ω at 5 mA, the HZM3.9NB1TL-E introduces ~0.65 mV/mA change in output voltage under varying load current. In a shunt regulator, this directly limits regulation accuracy - e.g., a 1 mA load shift causes ≤0.13 V deviation, making it suitable for low-current (<5 mA) reference roles but not high-current regulation.

Is HZM3.9NB1TL-E RoHS-compliant and halogen-free?

Yes - HZM3.9NB1TL-E complies with EU RoHS Directive 2011/65/EU and is halogen-free per Renesas' environmental policy. The device carries standard RoHS marking and meets JEDEC J-STD-609A Class 1 moisture sensitivity level (MSL-1), confirmed in Renesas' product compliance documentation.