Renesas HZM4.3NB1TL-E

Overview

HZM4.3NB1TL-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits, with a nominal zener voltage of 4.3 V (min 4.42 V, max 4.61 V at 5 mA), dynamic resistance of 130 Ω, and power dissipation rating of 200 mW in the MPAK surface-mount package.

For engineers reviewing the HZM4.3NB1TL-E datasheet, HZM4.3NB1TL-E pinout, HZM4.3NB1TL-E application, or HZM4.3NB1TL-E equivalent, this device serves as a compact, temperature-stable voltage reference for sensor biasing, ADC/DAC reference buffering, and overvoltage protection in space-constrained industrial and consumer electronics.

Technical Context

The HZM4.3NB1TL-E operates as a two-terminal shunt regulator, maintaining stable output voltage across varying load currents by conducting reverse current above its specified zener breakdown threshold. Its design relies on epitaxial planar junction technology to achieve tight voltage tolerance and low dynamic impedance.

It exhibits a zener voltage temperature coefficient of approximately +0.03 mV/°C (per Fig.2), enabling predictable drift behavior in ambient temperature ranges from –55°C to +150°C. The device is rated for junction temperatures up to 150°C and tested using 40 ms pulse conditions to minimize self-heating effects during characterization.

Key Specifications

Pinout & Package

The HZM4.3NB1TL-E is housed in the MPAK (JEITA code PLSP0003ZC-A, Renesas code MPAK(D)V) surface-mount package - a 3-pin, SC-59A-compatible leadframe structure measuring 2.7–3.1 mm × 1.35–1.65 mm × 0.95 mm max height, optimized for high-density PCB assembly and automated pick-and-place.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with BZX84-C4V3LT1G and MMSZ4V3ET1G, the HZM4.3NB1TL-E offers tighter Grade-B1 voltage tolerance (±2.2% vs. ±5%), a dedicated NC pin for routing isolation, and the smallest footprint in the 4.3 V class - making it optimal for miniaturized, high-accuracy reference designs where layout density and regulation precision are prioritized over raw power handling.

Availability

HZM4.3NB1TL-E is available at Aetrix Electronics and suitable for industrial sensor signal conditioning, portable device power monitoring, ADC reference buffering, and overvoltage protection clamping requiring stable component supply and consistent parametric performance across production lots.

Supply support for HZM4.3NB1TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer headquartered in Japan, specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and infrastructure markets.

The HZM-N Series is part of Renesas' discrete voltage reference portfolio, engineered specifically for high-density, high-reliability shunt regulation in space-constrained analog subsystems across consumer, industrial, and computing applications.

FAQ

What is the exact zener voltage range for HZM4.3NB1TL-E at 5 mA test current?

The HZM4.3NB1TL-E has a guaranteed zener voltage range of 4.42 V to 4.61 V when tested at I_Z = 5 mA, corresponding to Grade B1 specification per R07DS0358EJ0600 Rev.6.00. This ±2.2% tolerance is tighter than B/B2 grades in the same series and reflects Renesas' binning for enhanced reference accuracy in precision analog circuits.

Does HZM4.3NB1TL-E require external current limiting, and what is the recommended value?

Yes, HZM4.3NB1TL-E requires an external series current-limiting resistor to prevent exceeding its 200 mW power rating. For operation at 5 mA, a resistor value of (V_IN − 4.5 V)/5 mA is typical; e.g., with V_IN = 12 V, a 1.5 kΩ resistor delivers ~5.0 mA and dissipates ~37.5 mW, keeping total HZM4.3NB1TL-E dissipation safely below derated limits at elevated ambient temperatures.

Is Pin 1 of HZM4.3NB1TL-E electrically connected, and how should it be handled on the PCB?

No - Pin 1 of HZM4.3NB1TL-E is designated "NC" (No Connect) and is internally unconnected. It must remain electrically floating: no trace routing, no solder mask opening, and no connection to ground or any net. This design allows flexible PCB layout while maintaining mechanical stability in the MPAK package's 3-pin leadframe structure.

How does the temperature coefficient of HZM4.3NB1TL-E affect long-term reference stability?

HZM4.3NB1TL-E exhibits a positive temperature coefficient of approximately +0.03 mV/°C near 4.3 V (per Fig.2 of R07DS0358EJ0600), resulting in ~±0.3 mV drift over a 10°C change. In a 0–70°C operating range, this yields <±2.1 mV total shift - acceptable for 10-bit systems but may require trimming or compensation in 12-bit+ precision applications relying on HZM4.3NB1TL-E as primary reference.

Can HZM4.3NB1TL-E be used in place of older HZM4.3N variants, and what changes are needed?

Yes - HZM4.3NB1TL-E replaces earlier HZM4.3N grade-B versions with improved voltage tolerance (B1 vs. B) and identical MPAK packaging and pinout. No PCB layout or schematic changes are required; however, designers should verify that the tighter 4.42–4.61 V range meets system-level reference margin requirements, especially in legacy designs originally qualified with the wider 4.28–4.48 V B-grade spec.