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Renesas HZM4.3NB3TR-E
- Part No.:
- HZM4.3NB3TR-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZM4.3NB3TR-E.pdf
- Description:
- DIODE ZENER
- Quantity:
- Payment:
- Shipping:
Inventory:114,000
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Product details
Overview
HZM4.3NB3TR-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and power-supply feedback circuits. It delivers a nominal zener voltage of 4.3 V (min 4.28 V, max 4.48 V) at 5 mA, with dynamic resistance of 130 Ω, reverse current ≤10 μA at 1.0 V, and 200 mW power dissipation in the MPAK package - suitable for compact DC-DC converter reference stages.
For engineers reviewing the HZM4.3NB3TR-E datasheet, HZM4.3NB3TR-E pinout, HZM4.3NB3TR-E application, or HZM4.3NB3TR-E equivalent, key selection criteria include its B3-grade voltage tolerance (±0.1 V), low temperature coefficient (~+0.03 mV/°C near 4.3 V), surface-mount MPAK footprint, and suitability for space-constrained voltage reference and overvoltage clamp roles in industrial sensor interfaces and microcontroller supply monitoring.
Technical Context
This device operates as a two-terminal shunt regulator, maintaining stable output voltage across varying load currents by conducting excess current to ground when input exceeds the zener threshold. Its epitaxial planar construction ensures tight voltage distribution and repeatable breakdown characteristics under pulsed test conditions (Pw = 40 ms).
The HZM4.3NB3TR-E is optimized for low-noise, low-current regulation tasks - not intended for high-current surge suppression or transient voltage clamping. Its 130 Ω dynamic resistance and 10 μA maximum reverse leakage at VR = 1.0 V define its regulation accuracy and quiescent power loss in bias networks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 4.28 V to 4.48 V at IZ = 5 mA - defines precise regulation window for 3.3 V/5 V system references. |
| Dynamic Resistance (rd) | 130 Ω max at IZ = 5 mA - determines output impedance and load regulation sensitivity. |
| Reverse Current (IR) | ≤10 μA at VR = 1.0 V - ensures minimal standby power draw in always-on monitoring circuits. |
| Power Dissipation (Pd) | 200 mW at Ta = 25°C - sets maximum continuous power handling before thermal derating applies. |
| Junction Temperature (Tj) | 150°C max - supports operation in sealed enclosures or elevated ambient environments. |
| Package | MPAK (JEITA PLSP0003ZC-A) - 3-pin SMT package with 1.0 mm × 1.3 mm footprint and 0.55 mm height. |
| Temperature Coefficient (γZ) | +0.03 mV/°C (typ.) - enables predictable drift compensation in temperature-stable references. |
Pinout & Package
MPAK package: 3-terminal surface-mount plastic package with exposed cathode pad; dimensions 1.0 mm × 1.3 mm × 0.55 mm (L × W × H); terminal pitch 0.95 mm; weight 0.011 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | No Connect (NC) | Internally unconnected; must remain floating - no routing or soldering required. |
| 2 | Anode | Input terminal for reverse-bias configuration; connects to lower-potential node in shunt regulator topology. |
| 3 | Cathode | Output/reference terminal; ties to regulated voltage node and provides current sink path to ground. |
Key Features
| Feature | Design Value |
|---|---|
| B3-grade voltage tolerance | ±0.1 V at 4.3 V - enables tighter feedback loop control vs. standard B/B1/B2 grades. |
| Low dynamic resistance | 130 Ω max - improves line/load regulation in low-current reference designs. |
| MPAK surface-mount package | 0.55 mm profile and 1.0 mm × 1.3 mm footprint - supports high-density PCB layouts and automated assembly. |
| Pulse-tested characterization | Specified under 40 ms pulse (no DC thermal accumulation) - ensures reliability in intermittent regulation use cases. |
| Wide operating temperature range | –55°C to +150°C storage; 150°C max junction - suitable for automotive under-hood and industrial control environments. |
Applications
| Microcontroller Supply Monitoring | Low-Power Sensor Reference |
|---|---|
Use Scenario: Monitoring 3.3 V or 5 V rail integrity in battery-powered IoT nodes using comparator-based brown-out detection. IC Role / Device Role / Timing Role: Shunt voltage reference providing stable threshold for comparator input. Use Value: Enables accurate undervoltage lockout at 4.3 V with <10 μA quiescent current, extending battery life. |
Use Scenario: Providing excitation voltage for resistive bridge sensors (e.g., strain gauges, RTDs) in portable instrumentation. IC Role / Device Role / Timing Role: Low-drift, low-noise voltage source for ratiometric measurement front-ends. Use Value: Delivers ±0.1 V tolerance and +0.03 mV/°C TC - minimizing measurement error across –40°C to +85°C. |
| DC-DC Feedback Divider | Overvoltage Clamp Protection |
Use Scenario: Setting output voltage in adjustable buck converters via resistor divider tied to feedback pin. IC Role / Device Role / Timing Role: Precision zener replacing standard resistor divider to improve output accuracy and temperature stability. Use Value: Replaces 2% tolerance resistors with ±2.3% total VZ tolerance, reducing output drift by >40% over temperature. |
Use Scenario: Clamping transient spikes on 5 V logic rails caused by ESD or inductive switching in motor control boards. IC Role / Device Role / Timing Role: Fast-acting shunt clamp limiting voltage excursion above 4.48 V. Use Value: Absorbs up to 200 mW during short transients without latch-up, protecting downstream CMOS inputs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BZX84-C4V3 (Diodes Inc.) | Same 4.3 V nominal, SOT-23 package, 350 mW Pd, 90 Ω rd, but ±5% tolerance (vs. HZM4.3NB3TR-E's ±2.3%). | Higher power handling but looser voltage spec - better for general-purpose clamping, less ideal for precision references. | Select when higher surge capability is needed and voltage accuracy is secondary. |
| MMSZ4685 (ON Semiconductor) | 4.3 V nominal, SOD-123 package, 500 mW Pd, 100 Ω rd, ±5% tolerance, 100 nA IR at 1 V (vs. 10 μA). | Lower leakage and higher power, but larger footprint and wider VZ spread - suited for higher-current bias networks. | Select when ultra-low leakage (<100 nA) and robust thermal performance outweigh size constraints. |
Compared with BZX84-C4V3 and MMSZ4685, the HZM4.3NB3TR-E offers superior voltage tightness (B3 grade) and MPAK's ultra-compact footprint - making it optimal for space-limited, high-accuracy reference designs where leakage and thermal mass are secondary concerns.
Availability
HZM4.3NB3TR-E is available at Aetrix Electronics and suitable for industrial sensor interfaces, microcontroller supply monitoring, and DC-DC converter feedback circuits requiring stable component supply, consistent parametric performance, and RoHS-compliant packaging.
Supply support for HZM4.3NB3TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, and power devices for industrial, automotive, and infrastructure applications.
The HZM-N Series targets precision voltage stabilization in compact, high-reliability systems - engineered for tight-tolerance shunt regulation in space-constrained consumer, industrial, and computing equipment.
FAQ
What is the exact zener voltage range for HZM4.3NB3TR-E at 5 mA?
The HZM4.3NB3TR-E has a guaranteed zener voltage range of 4.28 V to 4.48 V when tested at IZ = 5 mA and Ta = 25°C. This B3-grade specification reflects ±0.1 V tolerance around the nominal 4.3 V value, confirmed in Renesas' R07DS0358EJ0600 datasheet, page 2. The HZM4.3NB3TR-E is characterized using 40 ms pulse testing to avoid thermal effects during measurement.
Does HZM4.3NB3TR-E have a functional third pin, and how should Pin 1 be handled?
No - Pin 1 of the HZM4.3NB3TR-E is designated NC (No Connect) and is internally unconnected. Per the official pin arrangement diagram (R07DS0358EJ0600, page 1), only Pins 2 (Anode) and 3 (Cathode) are electrically active. Pin 1 must remain unconnected on the PCB; routing or soldering to it may compromise reliability or violate Renesas' mounting guidelines for the MPAK package.
What is the maximum reverse leakage current for HZM4.3NB3TR-E, and at what voltage is it specified?
The maximum reverse leakage current for HZM4.3NB3TR-E is 10 μA, measured at a reverse voltage (VR) of 1.0 V and ambient temperature of 25°C. This value is explicitly listed in the Electrical Characteristics table (R07DS0358EJ0600, page 2) and defines the device's off-state power loss in low-quiescent-current applications such as battery-backed monitoring circuits using the HZM4.3NB3TR-E.
Can HZM4.3NB3TR-E replace standard 4.3 V Zener diodes like BZX84-C4V3 in existing designs?
The HZM4.3NB3TR-E is not a direct drop-in replacement for BZX84-C4V3 due to different package (MPAK vs. SOT-23), pinout (3-pin with NC vs. 3-pin active), and tighter voltage tolerance (B3 vs. ±5%). While both regulate near 4.3 V, layout changes are required to accommodate the MPAK footprint and unused Pin 1. The HZM4.3NB3TR-E should be selected specifically for applications needing its B3-grade accuracy and compact size - not as a generic substitute.
What is the temperature coefficient of HZM4.3NB3TR-E, and how does it affect voltage stability?
The HZM4.3NB3TR-E exhibits a typical temperature coefficient (γZ) of +0.03 mV/°C near its 4.3 V operating point, as shown in Figure 2 of the datasheet (R07DS0358EJ0600, page 5). This low positive drift means the zener voltage increases by ~0.3 mV per 10°C rise - enabling predictable, minimal deviation across –40°C to +85°C ambient ranges in precision reference designs using the HZM4.3NB3TR-E.
HZM4.3NB3TR-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZM4.3NB3TR-E FAQ
1.How can I place an order for HZM4.3NB3TR-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZM4.3NB3TR-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZM4.3NB3TR-E reliable?
The price and inventory of HZM4.3NB3TR-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZM4.3NB3TR-E is usually 5 days.
3.What payment methods are accepted for HZM4.3NB3TR-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZM4.3NB3TR-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZM4.3NB3TR-E?
HZM4.3NB3TR-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZM4.3NB3TR-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZM4.3NB3TR-E?
For technical support, including HZM4.3NB3TR-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZM4.3NB3TR-E requirements.
6.How does Aetrix verify that HZM4.3NB3TR-E is sourced from the original manufacturer or authorized distributors?
All HZM4.3NB3TR-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZM4.3NB3TR-E meets industry standards.
7.What is the process for return or replacement of HZM4.3NB3TR-E?
All HZM4.3NB3TR-E units undergo pre-shipment inspection (PSI). If there is an issue with HZM4.3NB3TR-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZM4.3NB3TR-E part is unused and in its original packaging.
Return procedure for HZM4.3NB3TR-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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