Renesas HZM5.1NB1TL-E

Overview

HZM5.1NB1TL-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and power supply reference circuits. It delivers a nominal zener voltage of 5.31–5.55 V at 5 mA test current, with dynamic resistance ≤130 Ω, maximum power dissipation of 200 mW, and operates within a junction temperature range of –55°C to +150°C. It is commonly used in voltage regulation for microcontroller reset circuits and sensor biasing.

For engineers reviewing the HZM5.1NB1TL-E datasheet, HZM5.1NB1TL-E pinout, HZM5.1NB1TL-E application, or HZM5.1NB1TL-E equivalent, key selection considerations include its B1-grade zener voltage tolerance (±2.3% at 5 mA), MPAK surface-mount package compatibility with high-density PCB layouts, thermal stability up to 150°C junction temperature, and suitability for low-current (<5 mA) stabilization roles where tight voltage accuracy and low dynamic impedance are required.

Technical Context

The HZM5.1NB1TL-E employs a silicon epitaxial planar structure optimized for stable reverse-breakdown behavior under DC and pulsed conditions (40 ms pulse width). Its zener voltage is specified at 5 mA, with reverse current limited to 5 µA at 1.5 V below V_Z, ensuring low leakage in standby modes.

Thermal coefficient data shows γ_Z ≈ +0.02 mV/°C near 5.1 V (per Fig.2), indicating minimal positive drift over temperature-critical for stable references in industrial ambient ranges. The device is rated for continuous operation up to 150°C junction temperature, supported by its 200 mW power dissipation derated linearly above 25°C ambient (Fig.3).

Key Specifications

Pinout & Package

Package: MPAK (JEITA code PLSP0003ZC-A), surface-mount, 3-terminal plastic package with 1.0 mm × 1.3 mm footprint and 0.55 mm terminal pitch. Mass: 0.011 g (typ.).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with BZX84-C5V1LT1G and MMSZ5231B-TP, the HZM5.1NB1TL-E trades higher power and lower r_d for superior voltage accuracy (±2.3%) and compact MPAK packaging-making it optimal for space-constrained, precision-regulation designs where thermal headroom is limited.

Availability

HZM5.1NB1TL-E is available at Aetrix Electronics and suitable for microcontroller reset circuits, sensor bias references, low-power LDO feedback networks, and overvoltage clamp protection requiring stable component supply with consistent B1-grade electrical binning and MPAK tape-and-reel delivery.

Supply support for HZM5.1NB1TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog and power devices, and advanced SoCs for industrial, automotive, and infrastructure markets.

The HZM-N Series is part of Renesas' discrete Zener diode portfolio engineered for high-accuracy voltage stabilization in space-constrained, thermally demanding applications-emphasizing tight grading, low dynamic impedance, and robust surface-mount packaging.

FAQ

What is the exact zener voltage range for HZM5.1NB1TL-E at 5 mA?

The HZM5.1NB1TL-E has a guaranteed zener voltage range of 5.31 V to 5.55 V when tested at I_Z = 5 mA and T_a = 25°C. This B1-grade specification reflects ±2.3% tolerance around the nominal 5.1 V designation, confirmed in the Electrical Characteristics table on page 2 of R07DS0358EJ0600 Rev.6.00. The HZM5.1NB1TL-E is binned to this range during final test.

Does HZM5.1NB1TL-E have a functional pin 1 connection?

No-pin 1 of the HZM5.1NB1TL-E is designated NC (No Connect) and is electrically isolated from the internal die. As shown in the Pin Arrangement diagram on page 1, only pins 2 (Anode) and 3 (Cathode) are active terminals. Pin 1 must remain unconnected on the PCB to prevent mechanical stress or unintended coupling; soldering or routing to it is not permitted.

What is the maximum allowable reverse current for HZM5.1NB1TL-E below its zener voltage?

The HZM5.1NB1TL-E specifies a maximum reverse current (I_R) of 5 µA when reverse-biased at V_R = 1.5 V - i.e., at 1.5 V below its minimum zener voltage (5.31 V – 1.5 V = 3.81 V). This value is measured at T_a = 25°C and ensures minimal leakage in undervoltage monitoring or high-impedance bias networks where standby current matters.

Can HZM5.1NB1TL-E be used in place of a standard 5.1 V Zener like 1N4733A?

No-HZM5.1NB1TL-E is not a drop-in replacement for through-hole Zeners such as 1N4733A. It uses a 3-pin MPAK package with pin 1 NC, whereas 1N4733A is DO-41 with two terminals. Additionally, the HZM5.1NB1TL-E's B1-grade voltage (5.31–5.55 V) differs from 1N4733A's 4.8–5.4 V range, and its 200 mW rating is lower than 1N4733A's 1 W. Board redesign and validation are required for substitution.

What is the thermal resistance junction-to-ambient for HZM5.1NB1TL-E?

The datasheet does not specify a numerical θ_JA value for HZM5.1NB1TL-E. Instead, Figure 3 ("Power Dissipation vs. Ambient Temperature") provides the derating curve: full 200 mW is allowed only at T_a ≤ 25°C, decreasing linearly to zero at ~150°C. This implies an effective θ_JA ≈ 625°C/W under the JEDEC-standard 1.6 mm × 1.6 mm copper pad layout described in Figure 2, consistent with typical MPAK thermal performance.