Renesas HZM6.2NB2JTL-E

Overview

HZM6.2NB2JTL-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits. It delivers a nominal zener voltage of 6.26–6.53 V at 5 mA, with dynamic resistance of 50 Ω, power dissipation up to 200 mW, and operates within –55°C to +150°C storage temperature range - deployed in voltage regulation for sensor signal conditioning and microcontroller reference supplies.

For engineers reviewing the HZM6.2NB2JTL-E datasheet, HZM6.2NB2JTL-E pinout, HZM6.2NB2JTL-E application, or HZM6.2NB2JTL-E equivalent, key selection criteria include zener voltage tolerance (±2.2% at grade B2), low dynamic impedance for stable regulation under load variation, MPAK package compatibility with high-density SMT assembly, and thermal performance validated to 150°C junction temperature.

Technical Context

The HZM6.2NB2JTL-E employs a silicon epitaxial planar structure optimized for tight zener voltage control and low noise in DC bias applications. Its graded doping profile ensures predictable breakdown behavior at 5 mA test current, with temperature coefficient of approximately +0.04 mV/°C near 6.2 V - enabling stable reference generation across industrial ambient ranges.

This device functions exclusively as a two-terminal shunt regulator, requiring external series current limiting. It does not integrate transient suppression, ESD protection, or temperature compensation circuitry; its performance relies on proper external bias design and PCB thermal management per Fig.3 derating curves.

Key Specifications

Pinout & Package

MPAK package: 3-terminal surface-mount plastic package with exposed die pad (non-electrical), 1.0 mm × 1.3 mm body, 0.65 mm pin pitch, and 0.55 mm terminal width. Pin 1 is NC (no internal connection), Pin 2 is Anode, Pin 3 is Cathode - top-view orientation as shown in datasheet Figure "Pin Arrangement".

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar zener diode voltage stabilization applications.

Compared with BZX84-C6V2 and MMSZ5234B, the HZM6.2NB2JTL-E offers superior voltage tolerance (±1.9% vs. ±5%) and compact MPAK footprint (1.0 × 1.3 mm), making it optimal for space-constrained, high-accuracy analog references - though its 200 mW limit requires careful current-limiting resistor sizing.

Availability

HZM6.2NB2JTL-E is available at Aetrix Electronics and suitable for industrial sensor interfaces, microcontroller reference supplies, and low-power analog front-end biasing requiring stable component supply with full traceability and lifecycle continuity.

Supply support for HZM6.2NB2JTL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog power, and timing solutions for industrial, automotive, and enterprise systems - founded from the merger of NEC Electronics and Renesas Technology.

The HZM-N Series targets precision voltage reference needs in cost-sensitive, high-volume applications - engineered for tight zener tolerance, low dynamic impedance, and robust thermal performance in compact MPAK packaging.

FAQ

What is the exact zener voltage range for HZM6.2NB2JTL-E at 5 mA test current?

The HZM6.2NB2JTL-E has a guaranteed zener voltage range of 6.26 V to 6.53 V when tested at I_Z = 5 mA and T_a = 25°C, corresponding to grade B2 tolerance per R07DS0358EJ0600 Rev.6.00 datasheet page 2. This 4.3% total span reflects ±1.9% deviation from nominal 6.2 V, confirmed in the Electrical Characteristics table for HZM6.2N type.

Does HZM6.2NB2JTL-E have a functional pin 1, and what is its purpose?

No - pin 1 of the HZM6.2NB2JTL-E is designated NC (No Connection) and has no internal electrical connection, as explicitly stated in the "Pin Arrangement" diagram on page 1 of the datasheet. It must be left unconnected or optionally grounded for mechanical stability, but it contributes zero electrical functionality to the zener regulation operation of HZM6.2NB2JTL-E.

What is the maximum allowable reverse current for HZM6.2NB2JTL-E below its zener knee voltage?

The maximum reverse current (I_R) for HZM6.2NB2JTL-E is 2 μA at V_R = 3.0 V, as specified in the Electrical Characteristics table on page 2 of the datasheet. This leakage value is measured well below the zener breakdown region and defines the upper bound of off-state conduction when used as a voltage clamp or reference in low-power sleep modes.

Can HZM6.2NB2JTL-E be used in place of a 6.2 V Zener in an existing SOT-23 design?

No direct substitution is supported - HZM6.2NB2JTL-E uses the MPAK (PLSP0003ZC-A) package with 0.65 mm pin pitch and 1.0 × 1.3 mm body, while SOT-23 has 1.3 × 1.75 mm dimensions and 0.95 mm pitch. The pinout also differs: HZM6.2NB2JTL-E has NC/Anode/Cathode versus SOT-23's Anode/Cathode/NC or Cathode/Anode/NC configurations. Layout redesign is required for HZM6.2NB2JTL-E integration.

What is the thermal resistance characteristic of HZM6.2NB2JTL-E, and how does it affect PCB layout?

The HZM6.2NB2JTL-E datasheet does not specify junction-to-ambient thermal resistance (R_θJA) as a standalone parameter, but Fig.3 ("Power Dissipation vs. Ambient Temperature") provides derating guidance: full 200 mW is allowed only at T_a ≤ 50°C, decreasing linearly to zero at ~125°C. To maintain reliability, PCB layout must provide ≥10 mm² of 1-oz copper connected to pins 2 and 3 (anode/cathode) per the JEDEC-standard thermal pad recommendations for PLSP0003ZC-A packages.