Renesas HZM6.8NB2JTL-E

Overview

HZM6.8NB2JTL-E from Renesas Electronics (formerly Hitachi) is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and digital circuits. It delivers a nominal zener voltage of 6.8 V with ±3.5% tolerance (6.65–6.93 V), dynamic resistance of 30 Ω at 5 mA, and maximum power dissipation of 200 mW in the MPAK surface-mount package. It is commonly used in voltage reference, overvoltage protection, and biasing circuits for op-amps and microcontrollers.

For engineers reviewing the HZM6.8NB2JTL-E datasheet, HZM6.8NB2JTL-E pinout, HZM6.8NB2JTL-E application, or HZM6.8NB2JTL-E equivalent, key selection criteria include zener voltage tolerance grade (B2), pulse-tested dynamic impedance, thermal derating behavior, and MPAK footprint compatibility with high-density PCB layouts.

Technical Context

The HZM6.8NB2JTL-E operates as a two-terminal shunt regulator, maintaining stable output voltage across variable load and input conditions via controlled reverse breakdown. Its zener voltage exhibits a positive temperature coefficient near 0.04 %/°C at 6.8 V, enabling predictable drift compensation in reference designs.

It is rated for 2 µA maximum reverse leakage at VR = 3.5 V and supports 5 mA test current for specification compliance. The device uses silicon epitaxial planar construction to ensure tight voltage distribution and long-term stability under continuous DC or pulsed operation (PW = 40 ms).

Key Specifications

Pinout & Package

Package: MPAK (SC-59A), 3-terminal surface-mount plastic package with exposed pad thermal path; dimensions 2.8 × 1.9 × 0.95 mm (L × W × H); weight 0.011 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with BZX84-C6V8LT1G and MMSZ5236B-TP, the HZM6.8NB2JTL-E offers superior voltage accuracy (±1.8% vs. ±5%) and MPAK's smaller footprint, making it optimal for space-constrained, high-accuracy analog subsystems - though its 200 mW rating requires careful thermal design at elevated ambient temperatures.

Availability

HZM6.8NB2JTL-E is available at Aetrix Electronics and suitable for voltage reference, overvoltage protection, and precision biasing applications requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for HZM6.8NB2JTL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT markets.

The HZM-N Series was developed by Hitachi (now Renesas) specifically for high-reliability, low-power voltage stabilization in space-constrained surface-mount systems - emphasizing tight zener voltage grading, low dynamic impedance, and robust thermal performance in miniature packages.

FAQ

What is the exact zener voltage range for HZM6.8NB2JTL-E at 5 mA test current?

The HZM6.8NB2JTL-E has a guaranteed zener voltage range of 6.65 V to 6.93 V when tested at I_Z = 5 mA and T_a = 25°C. This B2-grade binning reflects ±1.8% tolerance around the nominal 6.8 V rating, confirmed in the official Hitachi ADE-208-130C Rev. 3 datasheet. The HZM6.8NB2JTL-E achieves this tight distribution through laser-trimmed epitaxial process control.

Does HZM6.8NB2JTL-E have a no-connect pin, and how should it be handled on the PCB?

Yes, Pin 1 of the HZM6.8NB2JTL-E is designated NC (No Connect) and must remain electrically unconnected on the PCB. It is not internally bonded and serves only as a mechanical alignment aid. Routing traces or placing solder paste on Pin 1 may cause mechanical stress or unintended coupling; the HZM6.8NB2JTL-E datasheet explicitly requires leaving Pin 1 floating and unconnected.

What is the maximum reverse leakage current for HZM6.8NB2JTL-E, and at what voltage is it specified?

The HZM6.8NB2JTL-E specifies a maximum reverse leakage current (I_R) of 2 µA at V_R = 3.5 V and T_a = 25°C. This value is measured under DC conditions and confirms low standby power draw - critical for battery-powered applications. The HZM6.8NB2JTL-E maintains this leakage performance across its qualified temperature range without degradation.

Can HZM6.8NB2JTL-E be used in place of a standard 6.8 V Zener diode like 1N4735A?

No - the HZM6.8NB2JTL-E is not a drop-in replacement for through-hole diodes such as the 1N4735A. It uses the MPAK (SC-59A) surface-mount package with three terminals (including NC), whereas the 1N4735A is DO-41 with two leads. Layout, thermal design, and assembly process differ fundamentally; the HZM6.8NB2JTL-E requires requalification for any legacy 1N4735A design.

What is the junction-to-ambient thermal resistance (θ_JA) for HZM6.8NB2JTL-E, and how does it affect power derating?

The HZM6.8NB2JTL-E does not specify θ_JA directly, but its Absolute Maximum Ratings show linear derating of power dissipation above 25°C ambient: P_d decreases by ~1.6 mW/°C beyond 25°C, reaching zero at ~145°C. This implies an effective θ_JA ≈ 62.5°C/W on standard FR-4 (1.6 mm thick, 25 mm² Cu). For reliable operation, keep ambient below 100°C or increase copper area to reduce thermal resistance - a key constraint for the HZM6.8NB2JTL-E in enclosed environments.