Renesas HZM7A-JTR

Overview

HZM7A-JTR from Renesas Electronics (formerly Hitachi) is a silicon epitaxial planar Zener diode in MPAK package, rated for 7.5V nominal zener voltage (B-grade, 7.06–7.84V), 200mW power dissipation, and 30Ω dynamic resistance at 5mA test current - used for precision voltage stabilization in low-power analog reference and overvoltage protection circuits.

For engineers reviewing the HZM7A-JTR datasheet, HZM7A-JTR pinout, HZM7A-JTR application, or HZM7A-JTR equivalent, key selection criteria include zener voltage tolerance (±5% for B grade), low dynamic resistance for stable regulation under load variation, MPAK surface-mount compatibility with high-density PCB layouts, and junction temperature rating up to 150°C for industrial ambient operation.

Technical Context

The HZM7A-JTR operates as a two-terminal voltage reference device relying on controlled reverse-breakdown behavior in its silicon PN junction. Its zener voltage is specified at 5mA test current with pulse testing (PW = 40ms) to minimize self-heating effects during characterization.

It exhibits a positive temperature coefficient of +0.03%/°C near 7.5V, enabling predictable drift compensation in multi-diode reference networks. The MPAK package features three terminals - NC, anode, cathode - with internal die bonding optimized for thermal resistance and low-inductance reverse-bias operation.

Key Specifications

Pinout & Package

MPAK package (JEDEC SC-59A, EIAJ code: MPAK(1)), 3-terminal surface-mount outline with 0.011 g mass, 1.9 mm × 2.8 mm footprint, and 0.65 mm height. Terminal 1 is NC (no internal connection), Terminal 2 is anode, Terminal 3 is cathode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with BZX84-C7V5 and MMSZ5235B, the HZM7A-JTR offers identical voltage tolerance and r_d in a smaller MPAK footprint (1.9×2.8 mm vs. SOT-23's 2.9×1.3 mm), enabling denser routing in space-constrained IoT modules while maintaining industrial-grade thermal robustness up to 150°C junction temperature.

Availability

HZM7A-JTR is available at Aetrix Electronics and suitable for precision analog reference, overvoltage protection, current-source biasing, and temperature-stable regulator applications requiring stable component supply across extended product lifecycles.

Supply support for HZM7A-JTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader formed from the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions.

The HZM-N Series was developed by Hitachi (now Renesas) as a family of precision Zener diodes targeting high-density surface-mount voltage stabilization in industrial, automotive, and consumer electronics - emphasizing tight voltage tolerance, low dynamic resistance, and MPAK package compatibility.

FAQ

What is the exact zener voltage range for HZM7A-JTR at 5 mA test current?

The HZM7A-JTR has a guaranteed zener voltage range of 7.06 V to 7.84 V when tested at I_Z = 5 mA per Hitachi Rev. 3 datasheet (ADE-208-130C). This corresponds to Grade B tolerance (±5% around nominal 7.5 V) and is validated using 40 ms pulse testing to avoid thermal drift artifacts. The HZM7A-JTR maintains this specification across its qualified operating temperature range.

Does HZM7A-JTR have a no-connect (NC) pin, and how should it be handled on the PCB?

Yes, HZM7A-JTR Pin 1 is designated NC (no internal connection). It must remain electrically floating - neither connected to ground, power, nor signal traces - to prevent parasitic coupling or unintended current paths. PCB layout guidelines require isolation of this pad from all copper features, and solder mask should fully cover it unless thermal relief is explicitly needed per thermal simulation. The HZM7A-JTR datasheet confirms no internal bond wire connects to Terminal 1.

What is the maximum reverse current specification for HZM7A-JTR, and at what voltage is it measured?

The HZM7A-JTR specifies a maximum reverse current (I_R) of 2 µA at V_R = 4.0 V, per the Absolute Maximum Ratings table. This leakage value is measured under DC conditions at T_a = 25°C and defines the upper bound of off-state conduction before breakdown. For designs requiring ultra-low standby current, the HZM7A-JTR's 2 µA spec supports battery-life-critical applications such as wireless sensor nodes where quiescent drain must stay below 5 µA.

Can HZM7A-JTR be used in place of HZM7.5N, and what does the "-JTR" suffix indicate?

Yes, HZM7A-JTR is the tape-and-reel packaging variant of the HZM7.5N device - both share identical electrical specifications, MPAK package, and Grade B zener voltage range (7.06–7.84 V). The "-JTR" suffix denotes taping in embossed carrier tape per EIA-481 standard, intended for automated SMT placement. The HZM7A-JTR is functionally interchangeable with HZM7.5N-BTL/TR parts, differing only in packaging format and reel quantity.

What is the temperature coefficient of HZM7A-JTR, and how does it affect long-term stability?

The HZM7A-JTR exhibits a temperature coefficient of +0.03%/°C near its 7.5 V operating point, as shown in Figure 2 of the datasheet. This means its zener voltage increases by approximately 2.25 mV per °C rise in junction temperature. Over a –40°C to +125°C range, total drift is ~±15 mV - acceptable for non-critical references but requires compensation in metrology-grade systems. The HZM7A-JTR's predictable linear drift enables simple software or hardware correction in closed-loop analog designs.