Renesas HZM8.2NB1TR-E

Overview

HZM8.2NB1TR-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits. It delivers a nominal zener voltage of 8.2 V (min 8.56 V, max 8.93 V at I_Z = 5 mA), with dynamic resistance of 30 Ω, reverse current ≤2 μA at V_R = 5.0 V, and power dissipation up to 200 mW in the MPAK package - commonly used in voltage regulation for sensor biasing, ADC reference conditioning, and power supply feedback networks.

For engineers reviewing the HZM8.2NB1TR-E datasheet, HZM8.2NB1TR-E pinout, HZM8.2NB1TR-E application, or HZM8.2NB1TR-E equivalent, key selection considerations include its B1-grade voltage tolerance (±2.2% at 25°C), low temperature coefficient (~+0.04 mV/°C near 8.2 V), SC-59A-compatible MPAK footprint, and suitability for high-density SMT designs requiring stable 8.2 V references under 5 mA operating current.

Technical Context

The HZM8.2NB1TR-E operates as a two-terminal shunt regulator, maintaining stable output voltage by conducting reverse current when input exceeds its specified V_Z. Its epitaxial planar construction ensures tight voltage distribution and low noise performance critical for precision analog signal chains.

Designed for surface-mount use in the MPAK (PLSP0003ZC-A) package, it features a three-terminal configuration with Pin 1 (NC), Pin 2 (Anode), and Pin 3 (Cathode), enabling compact layout while isolating unused terminals to minimize parasitic coupling in sensitive reference paths.

Key Specifications

Pinout & Package

The HZM8.2NB1TR-E is housed in the MPAK (JEITA code PLSP0003ZC-A, equivalent to SC-59A) surface-mount package - a 3-pin, lead-free, small-outline plastic package measuring 2.7 × 1.35 × 0.95 mm with 0.95 mm terminal pitch, optimized for automated placement and reflow soldering in space-constrained PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with MMSZ4702T1G and BZX84-C8V2, the HZM8.2NB1TR-E offers superior voltage accuracy (±2.2% vs. ±5%), lower dynamic resistance (30 Ω vs. ≥40 Ω), and an isolated NC pin that reduces stray capacitance - making it preferred for precision analog reference and low-noise sensor biasing where layout density permits MPAK.

Availability

HZM8.2NB1TR-E is available at Aetrix Electronics and suitable for industrial sensor interfaces, precision ADC references, and switching power supply feedback circuits requiring stable component supply with consistent B1-grade voltage matching and RoHS-compliant MPAK packaging.

Supply support for HZM8.2NB1TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer headquartered in Japan, specializing in microcontrollers, analog mixed-signal ICs, and power management solutions for industrial, automotive, and infrastructure markets.

The HZM-N Series belongs to Renesas' precision discrete portfolio, engineered specifically for high-stability voltage reference and regulation in space-constrained, high-reliability applications - emphasizing tight V_Z grading, low noise, and robust thermal performance.

FAQ

What is the exact zener voltage range for HZM8.2NB1TR-E at 5 mA test current?

The HZM8.2NB1TR-E has a guaranteed zener voltage range of 8.56 V to 8.93 V when tested at I_Z = 5 mA and T_a = 25°C. This B1-grade specification reflects ±2.2% tolerance around the nominal 8.2 V rating, confirmed in Renesas' R07DS0358EJ0600 datasheet, page 3. The HZM8.2NB1TR-E achieves this tight distribution through laser-trimmed epitaxial process control.

Does HZM8.2NB1TR-E have a functional pin 1, and what happens if it's connected?

No, Pin 1 of the HZM8.2NB1TR-E is a true No Connect (NC) terminal - internally unconnected and electrically isolated. If inadvertently soldered to ground or another net, it introduces no electrical effect on regulation performance but risks mechanical stress or solder bridging. The HZM8.2NB1TR-E datasheet explicitly states "1. NC" in the pin arrangement diagram (page 1), and Renesas recommends leaving it floating per standard practice.

Can HZM8.2NB1TR-E replace HZM8.2NB2TR-E or HZM8.2NB3TR-E in the same PCB layout?

Yes - all HZM8.2N variants (B1, B2, B3) share identical MPAK package dimensions, pinout, and thermal characteristics. The only difference is zener voltage grading: HZM8.2NB1TR-E (8.56–8.93 V), HZM8.2NB2TR-E (8.85–9.23 V), and HZM8.2NB3TR-E (9.15–9.55 V). Since the HZM8.2NB1TR-E uses the same PLSP0003ZC-A footprint and mounting profile, it can be substituted without PCB modification, provided the system design accommodates its specific V_Z window.

What is the maximum reverse current specification for HZM8.2NB1TR-E, and under what condition is it measured?

The HZM8.2NB1TR-E specifies a maximum reverse current (I_R) of 2 μA, measured at V_R = 5.0 V and T_a = 25°C (R07DS0358EJ0600, page 3). This low leakage ensures minimal loading on high-impedance nodes - critical when used in op-amp reference buffers or microcontroller reset thresholds. The value is verified using pulse testing (P_w = 40 ms) to avoid self-heating artifacts.

Is HZM8.2NB1TR-E suitable for automotive applications, and what quality grade does it carry?

The HZM8.2NB1TR-E is rated as a "Standard" quality grade device per Renesas' classification (R07DS0358EJ0600, page 6), intended for industrial, office, and consumer equipment - not automotive or safety-critical systems. It lacks AEC-Q200 qualification and is not recommended for under-hood automotive use. For automotive-grade alternatives, consult Renesas' "High Quality" Zener series or qualified equivalents like the Automotive MMBZ5231B.