Renesas HZM8.2NB2JTR-E

Overview

HZM8.2NB2JTR-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits, with a nominal zener voltage of 8.2 V (B2 grade: 8.85–9.23 V), 2 mW reverse current test condition, 5.0 Ω dynamic resistance at 5 mA, and 200 mW power dissipation in MPAK package - used in voltage reference supplies for sensor signal conditioning and MCU ADC references.

For engineers reviewing the HZM8.2NB2JTR-E datasheet, HZM8.2NB2JTR-E pinout, HZM8.2NB2JTR-E application, or HZM8.2NB2JTR-E equivalent, key selection considerations include zener voltage tolerance (±2.5% for B2 grade), thermal coefficient (≈+0.045 mV/°C at 8.2 V), low dynamic impedance, surface-mount MPAK footprint compatibility, and compliance with industrial ambient temperature range (–55°C to +150°C).

Technical Context

This device operates as a two-terminal shunt regulator, maintaining stable output voltage across variable load currents by conducting excess current through its cathode-to-anode path when reverse-biased above V_Z. Its epitaxial planar construction ensures tight voltage distribution and repeatable breakdown characteristics.

Designed for DC voltage reference and overvoltage protection, it features graded zener voltage tolerances (B, B1, B2, B3), pulse-tested electrical parameters (40 ms pulse width), and junction temperature-limited operation up to 150°C - enabling reliable use in thermally constrained PCB layouts without active cooling.

Key Specifications

Pinout & Package

MPAK package (JEITA code PLSP0003ZC-A, Renesas code MPAK(D)V) - ultra-compact 3-pin surface-mount outline measuring 2.7–3.1 mm × 1.35–1.65 mm × 0.95 mm height, optimized for high-density PCB assembly and automated pick-and-place.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with BZX84-C8V2LT1G and MMSZ5236BT1G, the HZM8.2NB2JTR-E delivers superior voltage accuracy (±2.5% vs. ±5%), lower dynamic impedance (5.0 Ω vs. ≥10 Ω), and a compact MPAK footprint - making it optimal for space-constrained, high-stability reference designs where leakage and thermal drift must be minimized.

Availability

HZM8.2NB2JTR-E is available at Aetrix Electronics and suitable for industrial sensor reference, MCU ADC voltage reference, and low-power bias supply applications requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for HZM8.2NB2JTR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog power, and timing solutions for industrial, automotive, and infrastructure markets.

The HZM-N Series belongs to Renesas' discrete Zener diode product line, engineered specifically for high-accuracy voltage stabilization in space- and power-constrained analog systems - emphasizing tight grading, low dynamic impedance, and robust thermal performance.

FAQ

What is the exact zener voltage range specified for HZM8.2NB2JTR-E?

The HZM8.2NB2JTR-E has a guaranteed zener voltage range of 8.85 V to 9.23 V at 5 mA test current, corresponding to its B2 grade designation per Renesas R07DS0358EJ0600 datasheet. This ±2.5% tolerance enables precise voltage referencing where standard ±5% Zeners would introduce unacceptable error in analog signal chains.

Does HZM8.2NB2JTR-E require all three pins to be connected in circuit?

No - pin 1 is No Connect (NC) and must remain unconnected in PCB layout. Only pins 2 (anode) and 3 (cathode) are electrically active. The NC pin is a structural feature of the MPAK package and serves no functional role in the HZM8.2NB2JTR-E's operation as a two-terminal shunt regulator.

What is the maximum power dissipation of HZM8.2NB2JTR-E at room temperature?

The HZM8.2NB2JTR-E has a maximum power dissipation (P_d) of 200 mW at ambient temperature (T_a) = 25°C, as defined in the Absolute Maximum Ratings table. Derating is required above 25°C per the curve in Figure 3 of the datasheet, reaching zero dissipation at approximately 150°C ambient.

How does the dynamic resistance of HZM8.2NB2JTR-E affect voltage reference stability?

The HZM8.2NB2JTR-E specifies a maximum dynamic resistance (r_d) of 5.0 Ω at 5 mA, meaning output voltage changes by ≤5 mV per 1 mA change in load current. This low value directly improves reference stability in varying-load conditions - critical for high-resolution ADC references and precision op-amp biasing where even small ΔV causes measurable error.

Is HZM8.2NB2JTR-E suitable for automotive under-hood applications?

Yes - the HZM8.2NB2JTR-E supports junction temperatures up to 150°C and storage temperatures from –55°C to +150°C, meeting requirements for non-safety-critical automotive under-hood environments (e.g., engine control sensor interfaces). It is classified as "Standard" quality grade per Renesas, appropriate for industrial and automotive non-safety systems.