Renesas HZM8.2NB3JTL-E

Overview

HZM8.2NB3JTL-E from Renesas Electronics (formerly Hitachi) is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits. It delivers a nominal zener voltage of 8.28–8.64 V at 5 mA, with dynamic resistance ≤30 Ω, reverse current ≤2 µA at 5.0 V, and power dissipation up to 200 mW in the MPAK package - used in voltage reference supplies for sensor signal conditioning.

For engineers reviewing the HZM8.2NB3JTL-E datasheet, HZM8.2NB3JTL-E pinout, HZM8.2NB3JTL-E application, or HZM8.2NB3JTL-E equivalent, key selection criteria include zener voltage tolerance (Grade B3), low dynamic impedance for stable regulation under varying load, thermal coefficient behavior near 8.2 V, and compatibility with high-density SMT assembly on compact PCBs.

Technical Context

This device operates as a two-terminal shunt regulator, maintaining a stable output voltage across its cathode-anode terminals by conducting reverse current above its specified breakdown threshold. Its epitaxial planar construction ensures tight V_Z distribution and predictable temperature coefficient (≈+0.03 %/°C at 8.2 V), critical for reference stability in industrial sensors and power management IC feedback paths.

The MPAK (SC-59A) package features three terminals - NC, anode, and cathode - with the NC pin electrically isolated and unused. Thermal derating follows a linear 1.67 mW/°C reduction above 25°C ambient, validated per Fig.3 in the official datasheet, supporting reliable operation up to 150°C junction temperature.

Key Specifications

Pinout & Package

Package: MPAK (JEDEC SC-59A), surface-mount, 3-terminal plastic package with exposed pad thermal path; dimensions 2.8 × 1.9 × 0.95 mm (L × W × H), weight 0.011 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with HZM8.2NB3JTL-E, the BZX84-C8V2LT1G offers higher power but looser grading, while the MMSZ5238BT1G provides greater surge margin at the expense of board area and tighter production control - making HZM8.2NB3JTL-E optimal for miniaturized, high-accuracy industrial references.

Availability

HZM8.2NB3JTL-E is available at Aetrix Electronics and suitable for industrial sensor interfaces, medical calibration subsystems, and automotive signal conditioning requiring stable component supply, consistent grading (B3), and MPAK-compatible SMT logistics.

Supply support for HZM8.2NB3JTL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT applications.

The HZM-N Series was developed by Hitachi (now Renesas) specifically for high-reliability, low-power voltage stabilization in compact SMT systems - emphasizing tight V_Z grading, low dynamic impedance, and thermal stability across extended temperature ranges.

FAQ

What is the exact zener voltage range for HZM8.2NB3JTL-E at 5 mA test current?

HZM8.2NB3JTL-E has a guaranteed zener voltage range of 8.28 V to 8.64 V when tested at I_Z = 5 mA, per Grade B3 specification in the official Renesas datasheet ADE-208-130C (Rev. 3). This 4.3% tolerance band enables precise reference design without post-production trimming. The device achieves this performance using epitaxial planar process control and laser-trimmed grading during final test.

Does HZM8.2NB3JTL-E require external current limiting in series with its cathode?

Yes, HZM8.2NB3JTL-E requires an external series current-limiting resistor to ensure operating current stays within 1–10 mA for stable regulation and thermal safety. Without it, excessive current could exceed the 200 mW power limit or damage the junction. Typical designs use resistor values calculated from (V_IN − 8.4 V)/I_Z, where I_Z is selected between 2–5 mA for optimal r_d and noise performance in HZM8.2NB3JTL-E.

Can the NC pin (Pin 1) of HZM8.2NB3JTL-E be grounded or left floating?

The NC pin (Pin 1) of HZM8.2NB3JTL-E must remain unconnected - neither grounded nor tied to any net. It is electrically isolated within the MPAK package and serves only mechanical anchoring. Connecting it risks introducing parasitic capacitance, leakage paths, or mechanical stress that may degrade HZM8.2NB3JTL-E's regulation accuracy or long-term reliability, especially under thermal cycling.

How does the temperature coefficient of HZM8.2NB3JTL-E affect its use in precision references?

HZM8.2NB3JTL-E exhibits a positive temperature coefficient of approximately +0.03 %/°C near 8.2 V, meaning its zener voltage increases ~2.5 mV/°C. This behavior is well-documented in Fig.2 of the datasheet and allows predictable compensation when combined with negative-TC components (e.g., silicon diodes or resistors) in HZM8.2NB3JTL-E-based reference circuits, improving overall thermal stability to <±0.01%/°C in optimized designs.

Is HZM8.2NB3JTL-E compliant with RoHS and REACH requirements?

Yes, HZM8.2NB3JTL-E is RoHS-compliant (lead-free terminations, compliant with Directive 2011/65/EU) and REACH-conformant, as confirmed by Renesas' material declarations for the HZM-N Series. The MPAK package uses matte tin plating over copper leadframe, and all molding compounds meet halogen-free and heavy-metal restrictions. Full compliance documentation is available upon request for HZM8.2NB3JTL-E.