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Renesas HZM8.2NB3TR-E
- Part No.:
- HZM8.2NB3TR-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZM8.2NB3TR-E.pdf
- Description:
- DIODE ZENER
- Quantity:
- Payment:
- Shipping:
Inventory:81,000
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Product details
Overview
HZM8.2NB3TR-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits. It delivers a nominal zener voltage of 8.2 V (min 8.28 V, max 8.64 V at IZ = 5 mA), with dynamic resistance of 30 Ω, reverse current ≤2 μA at VR = 5.0 V, and power dissipation up to 200 mW in the MPAK surface-mount package - commonly used in voltage regulation for sensor signal conditioning and microcontroller reference rails.
For engineers reviewing the HZM8.2NB3TR-E datasheet, HZM8.2NB3TR-E pinout, HZM8.2NB3TR-E application, or HZM8.2NB3TR-E equivalent, this page provides verified electrical specifications, terminal roles, thermal behavior, real-world use cases, and validated alternative parts for design-in flexibility and supply continuity.
Technical Context
The HZM8.2NB3TR-E operates as a two-terminal shunt regulator, maintaining stable output voltage across varying load currents by conducting excess current to ground when input exceeds its zener threshold. Its graded B3 tolerance (±2.2% VZ) ensures tight regulation for feedback networks requiring predictable clamping.
Thermally, it supports junction temperatures up to 150°C and exhibits a positive zener voltage temperature coefficient (~+0.04 mV/°C at 8.2 V), enabling predictable drift compensation in temperature-sensitive references. The device is rated for storage between –55°C and +150°C and tested with 40-ms pulse conditions to avoid self-heating artifacts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 8.28 V to 8.64 V at IZ = 5 mA - defines precise clamping point for 8.2 V nominal reference designs. |
| Dynamic Resistance (rd) | 30 Ω max at IZ = 5 mA - determines output impedance and regulation sensitivity to current changes. |
| Reverse Current (IR) | ≤2 μA at VR = 5.0 V - ensures minimal leakage in standby or high-impedance bias networks. |
| Power Dissipation (Pd) | 200 mW maximum at Ta = 25°C - sets upper limit for continuous power handling before thermal derating applies. |
| Junction Temperature (Tj) | 150°C maximum - constrains PCB layout and ambient operating range for reliability-critical applications. |
| Package | MPAK (JEITA PLSP0003ZC-A) - 3-pin SMT package optimized for high-density assembly and thermal performance on standard FR-4 boards. |
| Temperature Coefficient (γZ) | +0.04 mV/°C - enables predictable VZ drift modeling over temperature for compensated references. |
Pinout & Package
MPAK package (PLSP0003ZC-A) features a compact 2.7 mm × 1.35 mm footprint with 0.95 mm height, optimized for automated placement and reflow soldering on space-constrained PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | No Connect (NC) | Internally unconnected terminal - must remain floating; no routing or grounding required. |
| 2 | Anode | Current entry point during forward bias; tied to lower-potential node in zener operation (reverse-biased mode). |
| 3 | Cathode | Current exit point during reverse breakdown; connected to regulated output node or voltage reference rail. |
Key Features
| Feature | Design Value |
|---|---|
| Graded B3 tolerance | ±2.2% VZ accuracy (8.28–8.64 V) - supports tighter reference stability than standard-grade Zeners. |
| Low dynamic resistance | 30 Ω max - improves load regulation and reduces output ripple in feedback paths. |
| MPAK surface-mount package | 0.011 g mass, JEITA-compliant footprint - enables high-density layout and compatibility with standard pick-and-place equipment. |
| Controlled temperature coefficient | +0.04 mV/°C - allows predictable thermal drift modeling for compensated voltage references. |
| Pulse-tested characterization | 40 ms test pulses - ensures published VZ and rd values reflect true small-signal behavior without self-heating error. |
Applications
| Industrial Sensor Signal Conditioning | Microcontroller Reference Voltage Stabilization |
|---|---|
|
Use Scenario: Stabilizing excitation voltage for resistive bridge sensors (e.g., strain gauges, RTDs) in PLC analog input modules. IC Role / Device Role / Timing Role: Shunt voltage reference providing fixed 8.2 V bias to sensor bridges, rejecting supply ripple and noise. Use Value: Enables <±0.5% full-scale measurement accuracy by holding bridge voltage constant despite ±10% input rail variation. |
Use Scenario: Supplying stable reference to ADCs or internal bandgap comparators in industrial microcontrollers (e.g., Renesas RA series). IC Role / Device Role / Timing Role: External precision shunt reference replacing less accurate internal references for high-resolution data acquisition. Use Value: Improves 12-bit ADC effective resolution by reducing reference drift-induced INL error from ±4 LSB to ±1 LSB over 0–70°C. |
| Low-Power Battery Monitor Threshold | Overvoltage Protection Clamp |
|
Use Scenario: Detecting end-of-charge voltage in Li-ion battery packs using discrete comparator-based cutoff circuitry. IC Role / Device Role / Timing Role: Zener clamp defining 8.2 V trip point for comparator input, independent of supply rail fluctuations. Use Value: Ensures consistent 4.15 V/cell cutoff accuracy across battery pack voltages from 3.0 V to 4.2 V per cell under varying load conditions. |
Use Scenario: Protecting downstream analog front-end ICs from transient overvoltage events on 9 V supply rails in instrumentation amplifiers. IC Role / Device Role / Timing Role: Fast-acting shunt clamp limiting rail voltage to ≤8.64 V during ESD or surge events. Use Value: Prevents latch-up in op-amps rated for 9 V absolute max by clamping transients within 100 ns, with <200 mW peak dissipation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BZX84-C8V2LT1G (onsemi) | Same nominal VZ (8.2 V), SOT-23 package, 350 mW Pd, ±5% tolerance (C-grade), rd = 30 Ω typical. | Higher power rating but looser tolerance; requires larger PCB area due to SOT-23 vs. MPAK footprint. | Select when higher surge power handling is needed and board space permits larger package. |
| MMSZ5236B-TP (Micro Commercial Components) | 8.2 V nominal, SOD-123 package, 500 mW Pd, ±5% tolerance, rd = 35 Ω typical, Tj = 150°C. | Higher power and same thermal rating, but wider VZ spread and larger package - less suitable for high-density layouts. | Choose for cost-sensitive, non-precision applications where tighter VZ tolerance is not required. |
Compared with BZX84-C8V2LT1G and MMSZ5236B-TP, the HZM8.2NB3TR-E offers superior VZ accuracy (±2.2% vs. ±5%) and a smaller MPAK footprint - making it optimal for space-constrained, high-stability reference designs where regulation precision outweighs raw power handling.
Availability
HZM8.2NB3TR-E is available at Aetrix Electronics and suitable for industrial sensor interfaces, microcontroller reference rails, battery monitoring circuits, and overvoltage protection clamps requiring stable component supply with traceable sourcing and long-term lifecycle support.
Supply support for HZM8.2NB3TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.
The HZM-N Series belongs to Renesas' precision discrete portfolio, engineered specifically for stable voltage reference and clamping in space- and accuracy-constrained embedded systems.
FAQ
What is the exact zener voltage range for HZM8.2NB3TR-E at 5 mA test current?
The HZM8.2NB3TR-E has a guaranteed zener voltage range of 8.28 V to 8.64 V when tested at IZ = 5 mA, corresponding to its B3 grade specification. This 360 mV span reflects ±2.2% tolerance around the nominal 8.2 V rating, confirmed in the Renesas R07DS0358EJ0600 datasheet, Page 3. The HZM8.2NB3TR-E maintains this specification under pulse-test conditions (40 ms) to eliminate thermal self-heating effects.
Is Pin 1 of HZM8.2NB3TR-E electrically connected internally?
No, Pin 1 of the HZM8.2NB3TR-E is designated NC (No Connect) and is not bonded to any internal die structure. As shown in the "Pin Arrangement" diagram on Page 1 of the Renesas datasheet, only Pins 2 (Anode) and 3 (Cathode) are functional. Pin 1 must remain unconnected on the PCB - neither routed nor grounded - to avoid unintended parasitic coupling or mechanical stress on the package.
What is the maximum allowable reverse current for HZM8.2NB3TR-E at 5.0 V applied voltage?
The maximum reverse current (IR) for HZM8.2NB3TR-E is 2 μA when VR = 5.0 V, as specified in the Electrical Characteristics table on Page 3 of the Renesas datasheet. This low leakage ensures minimal loading on high-impedance bias networks and preserves accuracy in precision reference applications where even nanoamp-level errors affect system gain or offset calibration.
Can HZM8.2NB3TR-E be used in place of a 5.1 V Zener diode for overvoltage protection?
No - the HZM8.2NB3TR-E is rated for 8.2 V nominal zener voltage and is not a functional substitute for a 5.1 V Zener like HZM5.1NB3TR-E. Using it in a 5.1 V protection circuit would result in clamping only above ~8.28 V, leaving the protected circuit exposed to damaging overvoltage between 5.1 V and 8.28 V. Always match the HZM8.2NB3TR-E to applications requiring an 8.2 V stabilization point.
What is the thermal resistance from junction to ambient for HZM8.2NB3TR-E in standard FR-4 PCB mounting?
The datasheet does not specify a numerical junction-to-ambient thermal resistance (θJA) for HZM8.2NB3TR-E. Instead, Figure 3 (Page 5) provides the derating curve: power dissipation drops linearly from 200 mW at 25°C ambient to zero at ~150°C. For design purposes, assume θJA ≈ 625°C/W based on typical MPAK-mounted Zener behavior on 1.6 mm FR-4 with 1.0 mm × 0.8 mm copper pads - but verify via thermal simulation or testing for critical applications. The HZM8.2NB3TR-E's 150°C max Tj remains the hard thermal limit.
HZM8.2NB3TR-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZM8.2NB3TR-E FAQ
1.How can I place an order for HZM8.2NB3TR-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZM8.2NB3TR-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZM8.2NB3TR-E reliable?
The price and inventory of HZM8.2NB3TR-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZM8.2NB3TR-E is usually 5 days.
3.What payment methods are accepted for HZM8.2NB3TR-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZM8.2NB3TR-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZM8.2NB3TR-E?
HZM8.2NB3TR-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZM8.2NB3TR-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZM8.2NB3TR-E?
For technical support, including HZM8.2NB3TR-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZM8.2NB3TR-E requirements.
6.How does Aetrix verify that HZM8.2NB3TR-E is sourced from the original manufacturer or authorized distributors?
All HZM8.2NB3TR-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZM8.2NB3TR-E meets industry standards.
7.What is the process for return or replacement of HZM8.2NB3TR-E?
All HZM8.2NB3TR-E units undergo pre-shipment inspection (PSI). If there is an issue with HZM8.2NB3TR-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZM8.2NB3TR-E part is unused and in its original packaging.
Return procedure for HZM8.2NB3TR-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZM8.2NB3TR-E Tags
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