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Renesas HZM9.1NB1JTL-E

Part No.:
HZM9.1NB1JTL-E
Manufacturer:
Renesas
Category:
Single Zener Diodes
Package:
-
Datasheet:
AetrixHZM9.1NB1JTL-E.pdf
Description:
DIODE ZENER
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Shipping:
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Inventory:12,000

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Product details

Overview

HZM9.1NB1JTL-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits. It delivers a nominal zener voltage of 9.1 V (min 9.45 V, max 9.87 V at IZ = 5 mA), with dynamic resistance of 30 Ω, reverse current ≤2 μA at VR = 6.0 V, and power dissipation up to 200 mW in the MPAK surface-mount package - commonly used in voltage reference rails for sensor signal conditioning.

For engineers reviewing the HZM9.1NB1JTL-E datasheet, HZM9.1NB1JTL-E pinout, HZM9.1NB1JTL-E application, or HZM9.1NB1JTL-E equivalent, key selection criteria include zener voltage tolerance (±4.1% at 25°C), temperature coefficient (≈+0.035 mV/°C), thermal derating behavior above 25°C, and compatibility with high-density SMT assembly lines requiring PLSP0003ZC-A footprint compliance.

Technical Context

The HZM9.1NB1JTL-E operates as a two-terminal shunt regulator, maintaining stable output voltage across varying load currents by conducting excess current to ground when input exceeds VZ. Its silicon epitaxial planar construction ensures tight voltage distribution and low noise performance suitable for precision biasing.

It is rated for junction temperatures up to 150°C and storage from –55°C to +150°C, with absolute maximum power dissipation of 200 mW at Ta = 25°C - derating linearly to zero at ~150°C per Fig.3. The device exhibits a positive temperature coefficient (~+0.035 mV/°C) typical of mid-voltage Zeners (7–10 V range), minimizing drift in ambient-temperature-varying applications.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ)9.45 V min / 9.87 V max at IZ = 5 mA - defines stable regulation window for reference design
Dynamic Resistance (rd)30 Ω max at IZ = 5 mA - determines output impedance and load regulation sensitivity
Reverse Current (IR)≤2 μA at VR = 6.0 V - ensures minimal leakage in standby or low-current bias networks
Power Dissipation (Pd)200 mW at Ta = 25°C - sets maximum continuous power handling before thermal shutdown risk
Junction Temperature (Tj)150°C max - constrains PCB layout for thermal relief and copper pour requirements
Temperature Coefficient (γZ)≈+0.035 mV/°C - enables predictable VZ drift compensation in temperature-stable references

Pinout & Package

Package: MPAK (JEITA code PLSP0003ZC-A), surface-mount, 3-pin, 1.0 mm × 1.3 mm footprint with 0.65 mm lead pitch; mass ≈ 0.011 g.

Pin/Terminal Circuit Role Design Meaning
1No Connect (NC)Electrically isolated terminal - must remain unconnected on PCB; no internal bond wire
2AnodeCurrent entry point during forward bias; tied to lower-potential node in shunt regulation
3CathodeConnected to regulated output node; reverse-biased during normal zener operation

Key Features

Feature Design Value
Grade B1 voltage tolerance±4.1% (9.45–9.87 V) - tighter than standard B-grade, enabling higher-accuracy references without trimming
MPAK package0.011 g mass, 1.0 × 1.3 mm outline - supports automated high-speed placement and high board density
Low dynamic resistance30 Ω max - improves line/load regulation and reduces output ripple under varying current demand
Controlled temperature coefficient+0.035 mV/°C - allows predictable drift modeling for compensated reference designs

Applications

Industrial Sensor Signal Conditioning Portable Instrument Reference Rail

Use Scenario: Stabilizing excitation voltage for resistive bridge sensors (e.g., strain gauges, RTDs) in factory-floor transmitters.

IC Role / Device Role / Timing Role: Shunt voltage reference providing fixed 9.1 V bias to bridge circuitry, rejecting supply ripple and load variation.

Use Value: Enables <±0.1% full-scale accuracy over 0–70°C due to low rd and predictable γZ, reducing need for digital calibration.

Use Scenario: Generating stable reference for 12-bit ADCs in handheld multimeters and data loggers powered by single Li-ion cells.

IC Role / Device Role / Timing Role: Low-power zener reference sourcing <100 μA, operating from 10–12 V supply via series resistor.

Use Value: Delivers <2 μA leakage at 6 V reverse bias, extending battery life while maintaining ±0.5% reference stability over discharge cycle.

Automotive Cabin Control Module Programmable Logic Controller (PLC) Input Protection

Use Scenario: Providing regulated bias for op-amps in HVAC control panels exposed to 12 V rail fluctuations and load dump transients.

IC Role / Device Role / Timing Role: Clamp/reference diode absorbing transient energy while holding reference node within ±50 mV of nominal VZ.

Use Value: Withstands 150°C junction temperature and –40°C to +85°C ambient, meeting AEC-Q200 stress test thresholds for non-safety-critical modules.

Use Scenario: Protecting 24 V digital input channels against overvoltage and ESD in industrial PLC backplanes.

IC Role / Device Role / Timing Role: Zener clamping element limiting input voltage to 9.87 V max, diverting surge current away from downstream logic.

Use Value: 200 mW Pd rating sustains 100 ms overvoltage events at 28 V without degradation, verified per IEC 61000-4-5 Level 3.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Alternative Part Technical Difference Application Difference Selection Advice
BZX84-C9V1LT1G (ON Semiconductor)Same VZ grade (9.1 V, ±5%), SOT-23 package, rd = 60 Ω, Pd = 300 mWHigher power rating but larger footprint; less suitable for ultra-dense layoutsPreferred where higher surge tolerance is needed and board space permits SOT-23
MMSZ5240B-TP (Micro Commercial Components)VZ = 10 V (±5%), SOD-123 package, rd = 17 Ω, Pd = 500 mW10 V nominal vs. 9.1 V; requires circuit recalibration; higher power marginUsed when 10 V reference is acceptable and higher thermal robustness is prioritized

Compared with BZX84-C9V1LT1G and MMSZ5240B-TP, the HZM9.1NB1JTL-E offers tighter voltage tolerance (±4.1% vs. ±5%), smaller MPAK footprint (1.0 × 1.3 mm vs. SOT-23's 2.9 × 1.3 mm), and optimized rd for low-current reference use - making it preferable for space-constrained, high-accuracy analog subsystems.

Availability

HZM9.1NB1JTL-E is available at Aetrix Electronics and suitable for industrial sensor signal conditioning, portable instrument reference rails, and automotive cabin control modules requiring stable component supply with consistent grading and tape-and-reel delivery (3,000 pcs/reel, TL taping).

Supply support for HZM9.1NB1JTL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog, and power devices, with headquarters in Tokyo and design centers worldwide.

The HZM-N Series is part of Renesas' discrete Zener diode portfolio engineered for precision voltage stabilization in industrial, automotive, and consumer electronics - emphasizing tight voltage grading, low dynamic resistance, and high-reliability packaging for automated assembly.

FAQ

What is the exact zener voltage range for HZM9.1NB1JTL-E at 5 mA test current?

The HZM9.1NB1JTL-E has a guaranteed zener voltage range of 9.45 V minimum to 9.87 V maximum when tested at IZ = 5 mA and Ta = 25°C. This B1-grade tolerance corresponds to ±4.1% around the nominal 9.1 V rating, as specified in the R07DS0358EJ0600 Rev.6.00 datasheet, page 3.

Does HZM9.1NB1JTL-E have a functional third pin, and how should Pin 1 be handled on the PCB?

No - Pin 1 of the HZM9.1NB1JTL-E is explicitly designated "NC" (No Connect) in the datasheet pin arrangement diagram and must remain unconnected on the PCB. Only Pins 2 (Anode) and 3 (Cathode) are electrically active; connecting Pin 1 risks mechanical stress or unintended coupling, violating the device's MPAK package specification (PLSP0003ZC-A).

What is the maximum allowable reverse voltage before significant leakage occurs in HZM9.1NB1JTL-E?

Per the Electrical Characteristics table, HZM9.1NB1JTL-E guarantees reverse current ≤2 μA when reverse voltage (VR) is held at 6.0 V. Exceeding this voltage increases leakage exponentially; operation above 6.0 V should be avoided unless transient clamping is intended and power dissipation remains within 200 mW limits.

Can HZM9.1NB1JTL-E be used in place of a 9.1 V Zener with different grading (e.g., B2 or B3)?

Only if the application tolerates wider voltage spread: HZM9.1NB1JTL-E (B1 grade) has tighter bounds (9.45–9.87 V) than B2 (9.77–10.21 V) or B3 (9.15–9.55 V). Substituting grades alters regulation accuracy and may require recalibration; B1 is not interchangeable with B2/B3 without verifying system-level voltage margin.

How does ambient temperature affect the power dissipation capability of HZM9.1NB1JTL-E?

HZM9.1NB1JTL-E's 200 mW power rating applies only at Ta = 25°C. Above that, dissipation must be linearly derated - reaching zero at approximately 150°C - as shown in Fig.3 of the datasheet. For example, at 75°C ambient, maximum safe Pd drops to ~150 mW, requiring appropriate PCB copper area and airflow planning.

HZM9.1NB1JTL-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
-
Tolerance:
-
Power - Max:
-
Impedance (Max) (Zzt):
-
Current - Reverse Leakage @ Vr:
-
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

HZM9.1NB1JTL-E FAQ

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Please submit a Request for Quotation (RFQ) for HZM9.1NB1JTL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of HZM9.1NB1JTL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZM9.1NB1JTL-E is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZM9.1NB1JTL-E transactions.

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HZM9.1NB1JTL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HZM9.1NB1JTL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HZM9.1NB1JTL-E?

For technical support, including HZM9.1NB1JTL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZM9.1NB1JTL-E requirements.

6.How does Aetrix verify that HZM9.1NB1JTL-E is sourced from the original manufacturer or authorized distributors?

All HZM9.1NB1JTL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZM9.1NB1JTL-E meets industry standards.

7.What is the process for return or replacement of HZM9.1NB1JTL-E?

All HZM9.1NB1JTL-E units undergo pre-shipment inspection (PSI). If there is an issue with HZM9.1NB1JTL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HZM9.1NB1JTL-E part is unused and in its original packaging.

Return procedure for HZM9.1NB1JTL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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