Renesas HZM9.1NB1TR-E

Overview

HZM9.1NB1TR-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits, with a nominal zener voltage of 9.1 V (min 9.45 V, max 9.87 V at I_Z = 5 mA), dynamic resistance of 30 Ω, and power dissipation rating of 200 mW in the MPAK surface-mount package.

For engineers reviewing the HZM9.1NB1TR-E datasheet, HZM9.1NB1TR-E pinout, HZM9.1NB1TR-E application, or HZM9.1NB1TR-E equivalent, key selection considerations include its B1-grade voltage tolerance (±4.2%), low temperature coefficient (~+0.035 mV/°C near 9.1 V), suitability for high-density PCB layouts, and use in fixed-voltage reference generation where stability under 5 mA bias is required.

Technical Context

This Zener diode operates in reverse breakdown mode to maintain a stable reference voltage across its cathode–anode terminals. Its epitaxial planar construction ensures consistent breakdown characteristics and low leakage (<2 µA at VR = 7.3 V), while the MPAK package enables automated SMT assembly with thermal performance validated up to 150°C junction temperature.

The device exhibits a positive temperature coefficient near 9.1 V (≈ +0.035 mV/°C), making it suitable for temperature-compensated references when paired with negative-TC components. Electrical behavior is specified under pulsed test conditions (P_w = 40 ms), minimizing self-heating effects during characterization.

Key Specifications

Pinout & Package

MPAK package: 3-terminal surface-mount plastic package with exposed pad (non-electrical), 1.0 mm × 1.3 mm body, 0.55 mm profile, and JEDEC-compliant land pattern (PLSP0003ZC-A).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener reference applications.

Compared with BZX84-C9V1LT1G and MMSZ5240B-TP, the HZM9.1NB1TR-E delivers superior voltage accuracy (±4.2% vs. ±5%) in a smaller MPAK footprint while matching the 30 Ω dynamic resistance of the MMSZ5240B-TP - making it optimal for space-constrained, high-accuracy analog reference designs.

Availability

HZM9.1NB1TR-E is available at Aetrix Electronics and suitable for industrial sensor signal conditioning, portable instrument reference supplies, automotive cabin control panels, and IoT node power management requiring stable component supply and long-term manufacturability.

Supply support for HZM9.1NB1TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer headquartered in Japan, specializing in microcontrollers, analog power devices, and timing solutions for industrial, automotive, and infrastructure markets.

The HZM-N Series belongs to Renesas' precision discrete portfolio, engineered specifically for stable voltage reference and overvoltage protection in compact, high-reliability systems where tight zener voltage grading and low-profile packaging are critical.

FAQ

What is the exact zener voltage range for HZM9.1NB1TR-E at 5 mA test current?

The HZM9.1NB1TR-E has a guaranteed zener voltage range of 9.45 V to 9.87 V when tested at I_Z = 5 mA, corresponding to its B1 grade specification per Renesas datasheet R07DS0358EJ0600. This 4.2% tolerance band is tighter than standard B-grade Zeners and supports high-accuracy reference designs without external trimming. The HZM9.1NB1TR-E achieves this via laser-trimmed epitaxial process control during wafer fabrication.

Does HZM9.1NB1TR-E have a functional pin 1 connection?

No, pin 1 of the HZM9.1NB1TR-E is designated NC (No Connect) and is internally unconnected - it must remain electrically floating and should not be soldered to any net or ground plane. Only pins 2 (Anode) and 3 (Cathode) are active terminals; misrouting pin 1 can cause assembly defects or false continuity test failures. The HZM9.1NB1TR-E pinout is confirmed in the "Pin Arrangement" diagram on page 1 of the official datasheet.

What is the maximum allowable reverse voltage before breakdown for HZM9.1NB1TR-E?

The HZM9.1NB1TR-E is rated for a maximum reverse voltage (V_R) of 7.3 V prior to entering zener breakdown - at this voltage, reverse current is guaranteed ≤2 µA. Exceeding 7.3 V will initiate controlled conduction, and sustained operation above the specified zener voltage requires proper current limiting to avoid exceeding the 200 mW power dissipation limit. This parameter is explicitly defined in the "Electrical Characteristics" table for HZM9.1N on page 3 of the HZM-N Series datasheet.

Can HZM9.1NB1TR-E be used in place of a standard 9.1 V Zener in existing SOT-23 designs?

No - the HZM9.1NB1TR-E uses the MPAK (PLSP0003ZC-A) package, which is physically incompatible with SOT-23 footprints due to different pad layout, terminal count (3-pin vs. 3-pin but different spacing), and absence of pin 1 functionality. While both are 3-terminal Zeners, direct replacement would require PCB redesign. The HZM9.1NB1TR-E's unique pin 1 (NC) and 0.55 mm profile necessitate dedicated land patterns per Renesas package drawing.

What is the temperature coefficient behavior of HZM9.1NB1TR-E near its nominal voltage?

The HZM9.1NB1TR-E exhibits a positive temperature coefficient of approximately +0.035 mV/°C near 9.1 V, as shown in Figure 2 ("Temperature Coefficient vs. Zener Voltage") of the datasheet. This means its zener voltage increases by ~0.35 mV per 10°C rise in junction temperature - a characteristic useful for compensating negative-TC elements in composite reference circuits. This value is measured and plotted across the full 1.9–38 V HZM-N family, with HZM9.1NB1TR-E falling within the +0.03 to +0.04 mV/°C band.