Renesas HZM9.1NB2TR-E

Overview

HZM9.1NB2TR-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits, featuring a nominal zener voltage of 9.1 V (±5.5% tolerance), 2 mW reverse current test condition, 6.0 Ω dynamic resistance at 5 mA, 200 mW power dissipation, and MPAK surface-mount package for high-density PCB layouts.

For engineers reviewing the HZM9.1NB2TR-E datasheet, HZM9.1NB2TR-E pinout, HZM9.1NB2TR-E application, or HZM9.1NB2TR-E equivalent, this device serves as a compact, temperature-stable voltage reference in sensor signal conditioning, power supply feedback loops, and overvoltage protection circuits where tight regulation and low thermal drift are required.

Technical Context

The HZM9.1NB2TR-E operates as a two-terminal shunt regulator with fixed breakdown voltage defined by its doped epitaxial junction. Its zener voltage exhibits a positive temperature coefficient of +0.045 mV/°C near 9.1 V, enabling predictable drift compensation in multi-device references.

Designed for DC stabilization only, it requires external series current limiting and delivers stable regulation under 2–5 mA operating current. It is not rated for transient suppression or surge handling, and its 150°C maximum junction temperature supports operation in thermally constrained industrial environments.

Key Specifications

Pinout & Package

Package: MPAK (JEITA code PLSP0003ZC-A), 3-pin surface-mount package with 1.0 mm × 1.3 mm footprint, 0.55 mm terminal pitch, and 0.16 mm typical lead thickness. Non-conductive plastic body with matte finish; terminals are tin-plated copper alloy.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with BZX84-C9V1LT1G and MMSZ5240B-TP, the HZM9.1NB2TR-E offers superior voltage tightness (±2.5% vs. ±5%), lower dynamic resistance (6.0 Ω vs. ≥10 Ω), and smaller MPAK footprint - making it optimal for space-constrained, high-accuracy analog reference designs despite its 200 mW limit.

Availability

HZM9.1NB2TR-E is available at Aetrix Electronics and suitable for industrial sensor interfaces, switching power supply feedback networks, and overvoltage protection circuits requiring stable component supply, consistent parametric performance, and RoHS-compliant packaging.

Supply support for HZM9.1NB2TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer headquartered in Japan, specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and infrastructure markets.

The HZM-N Series is part of Renesas' discrete voltage reference portfolio, engineered specifically for high-density, low-power stabilization in analog front-ends and power management subsystems where precision, thermal stability, and compact packaging are essential.

FAQ

What is the exact zener voltage range for HZM9.1NB2TR-E at 5 mA test current?

The HZM9.1NB2TR-E has a guaranteed zener voltage range of 9.15 V to 9.55 V when tested at I_Z = 5 mA and T_a = 25°C. This ±2.5% tolerance corresponds to Grade B2 specification and is confirmed in the R07DS0358EJ0600 datasheet, page 3. The HZM9.1NB2TR-E achieves tighter regulation than standard Grade B parts, supporting higher-accuracy reference designs without external trimming.

Does HZM9.1NB2TR-E have a pin 1 connection, and what is its function?

No - pin 1 of the HZM9.1NB2TR-E is designated NC (No Connect) and is internally unconnected. Per the official pin arrangement diagram (R07DS0358EJ0600, page 1), only pins 2 (Anode) and 3 (Cathode) are electrically active. Pin 1 must remain unconnected on the PCB; routing or soldering to it may compromise reliability or violate JEDEC MPAK layout guidelines. The HZM9.1NB2TR-E relies solely on its two functional terminals for shunt regulation.

What is the maximum allowable power dissipation for HZM9.1NB2TR-E at 70°C ambient temperature?

At T_a = 70°C, the HZM9.1NB2TR-E's maximum power dissipation is derated to approximately 140 mW, calculated using the linear derating slope from the Fig.3 curve (R07DS0358EJ0600, page 5). The datasheet specifies 200 mW at 25°C with a 1.6°C/mW thermal resistance, resulting in 140 mW at 70°C. Exceeding this in sustained operation risks exceeding the 150°C junction limit and premature failure of the HZM9.1NB2TR-E.

Is HZM9.1NB2TR-E suitable for use in automotive under-hood applications?

The HZM9.1NB2TR-E is rated for junction temperatures up to 150°C and storage from –55°C to +150°C, meeting under-hood thermal requirements. However, Renesas classifies it as "Standard" grade (R07DS0358EJ0600, page 6), intended for industrial and commercial use-not automotive safety-critical systems. While it can operate in non-safety automotive subsystems (e.g., cabin sensors), the HZM9.1NB2TR-E lacks AEC-Q200 qualification and should not be used in engine control or ADAS functions without additional validation.

How does the temperature coefficient of HZM9.1NB2TR-E affect its performance in a 0–70°C operating range?

The HZM9.1NB2TR-E exhibits a temperature coefficient of +0.045 mV/°C near 9.1 V (R07DS0358EJ0600, page 5, Fig.2), resulting in a total drift of approximately +3.15 mV across a 70°C span - less than 0.035% of nominal V_Z. This low, predictable drift enables stable reference behavior in uncooled industrial enclosures. When paired with complementary components, the HZM9.1NB2TR-E supports <0.1% total reference error over the full range without active compensation.