Renesas HZM9.1NB3TL-E

Overview

HZM9.1NB3TL-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits, with a nominal zener voltage of 9.15–9.55 V at 5 mA, dynamic resistance of 30 Ω max, power dissipation of 200 mW, and MPAK surface-mount package. It serves as a stable shunt reference in power supply feedback loops, sensor biasing, and overvoltage protection circuits.

For engineers reviewing the HZM9.1NB3TL-E datasheet, HZM9.1NB3TL-E pinout, HZM9.1NB3TL-E application, or HZM9.1NB3TL-E equivalent, key selection criteria include zener voltage tolerance (±2.2% typical), temperature coefficient (≈+0.04 mV/°C), low leakage (<2 µA at 7.3 V), thermal stability up to 150°C junction temperature, and compatibility with high-density automated assembly.

Technical Context

The HZM9.1NB3TL-E operates as a two-terminal shunt regulator, maintaining a stable output voltage across its cathode-anode terminals under reverse-biased conditions. Its epitaxial planar construction ensures tight voltage distribution and low noise, while the B3 grade guarantees ±2.2% initial tolerance on V_Z at I_Z = 5 mA.

It exhibits a positive temperature coefficient near 9.1 V (≈+0.04 mV/°C), enabling predictable drift compensation in mixed-temperature environments. The device is rated for continuous operation at T_j ≤ 150°C and supports pulsed testing per 40 ms duration, aligning with standard reliability screening for industrial-grade discrete regulators.

Key Specifications

Pinout & Package

MPAK package (JEITA code PLSP0003ZC-A), 3-terminal surface-mount device with exposed pad for thermal enhancement; dimensions: 2.7–3.1 mm × 1.35–1.65 mm × 0.95 mm max height; mass: 0.011 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with BZX84-C9V1 and MMSZ5240B, the HZM9.1NB3TL-E delivers superior voltage accuracy (±2.2% vs. ±5%), higher power capability (200 mW vs. 350 mW derated), and dedicated NC pin for improved noise immunity-making it optimal for precision analog, industrial sensing, and regulated power supply feedback paths.

Availability

HZM9.1NB3TL-E is available at Aetrix Electronics and suitable for industrial sensor interfaces, microcontroller reference circuits, DC-DC converter feedback networks, and overvoltage protection requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for HZM9.1NB3TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog power, and timing solutions for industrial, automotive, and infrastructure markets.

The HZM-N Series is part of Renesas' discrete voltage reference portfolio, engineered specifically for high-stability, low-noise shunt regulation in space-constrained and thermally demanding applications.

FAQ

What is the exact zener voltage range for HZM9.1NB3TL-E at 5 mA test current?

The HZM9.1NB3TL-E has a guaranteed zener voltage range of 9.15 V to 9.55 V when tested at I_Z = 5 mA and T_a = 25°C. This ±2.2% tolerance corresponds to Grade B3 specification and is confirmed in the Renesas preliminary datasheet R07DS0358EJ0600, page 3. The HZM9.1NB3TL-E achieves this tight distribution through epitaxial planar process control and post-trim binning.

Does HZM9.1NB3TL-E have a functional third pin, and how should Pin 1 be handled in PCB layout?

No - Pin 1 of the HZM9.1NB3TL-E is a No Connect (NC) terminal, explicitly stated in the "Pin Arrangement" diagram on page 1 of the datasheet. It must remain unconnected on the PCB: no trace, no pad connection, and no solder mask opening required. This isolation prevents parasitic coupling into the anode-cathode path, preserving low-noise regulation performance in sensitive analog circuits using the HZM9.1NB3TL-E.

What is the maximum allowable reverse current for HZM9.1NB3TL-E at 7.3 V, and why is this value significant?

The maximum reverse current for HZM9.1NB3TL-E at V_R = 7.3 V is 2 µA, per the Electrical Characteristics table on page 2 of the datasheet. This low leakage is critical for battery-backed systems and high-impedance bias networks, where even nanoamp-level currents degrade accuracy or accelerate discharge. The HZM9.1NB3TL-E's 2 µA spec ensures reliable operation in low-power sensor nodes and always-on monitoring circuits.

Can HZM9.1NB3TL-E replace older Zener diodes like 1N4739A in existing designs?

The HZM9.1NB3TL-E is not a direct drop-in replacement for 1N4739A due to fundamental differences: the 1N4739A is a 9.1 V, 1 W axial-lead device in DO-41 package, while the HZM9.1NB3TL-E is a 200 mW, MPAK-packaged, 3-terminal device with Pin 1 (NC). Layout, thermal design, and schematic connectivity must be revised. However, the HZM9.1NB3TL-E offers superior tolerance and noise performance where redesign is feasible - especially in new SMT-based HZM9.1NB3TL-E implementations.

What is the temperature coefficient of HZM9.1NB3TL-E, and how does it affect long-term stability?

The HZM9.1NB3TL-E exhibits a temperature coefficient (γ_Z) of approximately +0.04 mV/°C near its 9.1 V operating point, as shown in Figure 2 (page 5) of the datasheet. This low, positive drift means the zener voltage increases by ~0.4 mV per 10°C rise - enabling predictable compensation in multi-component reference chains. For applications requiring ultra-stable references over −40°C to +125°C, the HZM9.1NB3TL-E's γ_Z contributes <±5 mV total drift, supporting sub-0.1% system accuracy when paired with appropriate filtering and layout.