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Renesas HZS10NB1TA-E
- Part No.:
- HZS10NB1TA-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS10NB1TA-E.pdf
- Description:
- DIODE ZENER 0.4W
- Quantity:
- Payment:
- Shipping:
Inventory:4,000
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Product details
Overview
HZS10NB1TA-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies. It delivers a nominal zener voltage of 9.19–9.59 V at 5 mA test current, with dynamic resistance ≤20 Ω, reverse leakage ≤0.2 μA at 7.0 V, and maximum power dissipation of 400 mW in the MHD package.
For engineers reviewing the HZS10NB1TA-E datasheet, HZS10NB1TA-E pinout, HZS10NB1TA-E application, or HZS10NB1TA-E equivalent, this device serves as a compact, high-stability reference element in analog sensing circuits, voltage clamping networks, and low-current biasing stages where tight voltage tolerance and low temperature drift are required.
Technical Context
The HZS10NB1TA-E operates as a two-terminal voltage reference using avalanche breakdown in its silicon planar junction. Its zener voltage is specified over a 5 mA test current with pulse testing (PW = 40 ms), ensuring stable regulation under transient load conditions.
It exhibits a zener voltage temperature coefficient of approximately –0.02 %/°C near 10 V, enabling predictable drift behavior across –55 to +175 °C storage range and up to 200 °C junction temperature. The device is optimized for automatic insertion on 5 mm-pitch PCBs and rated for standard-grade industrial applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 9.19–9.59 V at IZ = 5 mA - defines precise regulation point for feedback or reference circuits |
| Dynamic Resistance (rd) | ≤20 Ω at IZ = 5 mA - ensures minimal output voltage variation under small-signal load changes |
| Reverse Leakage (IR) | ≤0.2 μA at VR = 7.0 V - guarantees negligible standby current in high-impedance bias networks |
| Power Dissipation (Pd) | 400 mW - supports continuous operation in compact SMD layouts without forced cooling |
| Junction Temperature (Tj) | 200 °C - enables reliable function in thermally demanding environments such as enclosed power modules |
| Package | MHD (JEITA GRZZ0002ZC-A) - standardized 2-pin axial leaded package with 2.0 mm diameter and 26 mm length |
| Temperature Coefficient (γZ) | ≈ –0.02 %/°C - provides predictable, low-drift performance across operating ambient range |
Pinout & Package
The HZS10NB1TA-E is housed in the MHD package: a glass-encapsulated axial-leaded silicon diode with cathode band marking. Dimensions are φD = 2.0 mm (nom), L = 26.0 mm (min), E = 2.4 mm (max), mass ≈ 0.084 g. Leads are tinned copper-clad steel, suitable for wave soldering and high-speed automatic insertion.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Zener reference terminal | Connected to regulated output node; polarity must be observed to maintain reverse-bias operation |
| 2 (Anode) | Reference ground return | Completes current path; tied to circuit common or lower-potential rail in shunt regulator topology |
Key Features
| Feature | Design Value |
|---|---|
| Low dynamic impedance | ≤20 Ω at 5 mA - improves regulation accuracy under varying load currents |
| Low leakage current | ≤0.2 μA at 7.0 V - preserves signal integrity in high-impedance sensor interfaces |
| Stable temperature coefficient | ≈ –0.02 %/°C near 10 V - reduces calibration burden in wide-temperature industrial designs |
| High reliability construction | 200 °C max junction temperature - supports long-term operation in sealed or convection-limited enclosures |
| Automated assembly compatibility | 5 mm pitch lead spacing - enables direct use in high-volume automated insertion equipment |
Applications
| Industrial Sensor Signal Conditioning | Low-Power Microcontroller Reference |
|---|---|
Use Scenario: Precision analog front-end for RTD or strain gauge amplifiers requiring stable excitation or offset correction. IC Role / Device Role / Timing Role: Shunt voltage reference providing fixed 9.1–9.6 V bias for op-amp gain-setting networks and ADC reference dividers. Use Value: Enables <±1% full-scale accuracy over –40 to +85 °C ambient without trimming, leveraging low rd and stable γZ. |
Use Scenario: Standby-mode voltage reference for ultra-low-power MCU reset supervision or brown-out detection. IC Role / Device Role / Timing Role: Low-leakage zener element supplying regulated threshold to comparator input during sleep cycles. Use Value: Draws <0.2 μA at 7 V, extending battery life in coin-cell-powered IoT nodes while maintaining accurate trip points. |
| DC-DC Converter Feedback Divider | Overvoltage Clamp in Interface Circuits |
Use Scenario: Secondary-side feedback network in isolated flyback or buck-boost converters targeting 12 V output. IC Role / Device Role / Timing Role: Precision zener setting reference voltage for optocoupler-driven error amplifier compensation loop. Use Value: Maintains ±2% output regulation across line/load transients due to low rd and repeatable VZ tolerance. |
Use Scenario: Input protection for RS-485 transceivers or analog multiplexers exposed to ESD or surge events. IC Role / Device Role / Timing Role: Fast-acting clamp limiting transient voltages to safe levels before IC damage occurs. Use Value: Responds within nanoseconds to >1 kV ESD pulses, dissipating energy via controlled avalanche without latch-up. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar zener reference applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4739A | Zener voltage 9.1 V (±5%), Pd = 1 W, DO-41 package, higher rd (≈30 Ω) | Higher power handling but larger footprint; less suitable for space-constrained PCBs | Choose when >400 mW dissipation or through-hole assembly is required |
| BZX55C9V1 | Zener voltage 9.1 V (±5%), Pd = 500 mW, DO-35 package, rd ≈ 25 Ω, Tj = 175 °C | Slightly wider tolerance and lower thermal rating; not qualified for extended industrial temp range | Acceptable for commercial-grade designs where 200 °C junction rating is unnecessary |
Compared with 1N4739A and BZX55C9V1, the HZS10NB1TA-E offers tighter VZ tolerance (±2.1% vs. ±5%), superior thermal robustness (200 °C vs. 175 °C), and lower dynamic impedance-making it preferred for high-reliability, miniaturized industrial power management.
Availability
HZS10NB1TA-E is available at Aetrix Electronics and suitable for industrial sensor conditioning, low-power microcontroller reference, and DC-DC converter feedback requiring stable component supply with consistent parametric performance across production lots.
Supply support for HZS10NB1TA-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise systems.
The HZS-N Series was developed specifically for high-stability, low-power voltage reference and clamping applications in industrial power supplies and analog signal chains-emphasizing precision, thermal resilience, and automated manufacturability.
FAQ
What is the exact zener voltage range for HZS10NB1TA-E at 5 mA?
The HZS10NB1TA-E has a guaranteed zener voltage range of 9.19 V to 9.59 V when tested at IZ = 5 mA per the Renesas REJ03G0185-0300 datasheet. This 4.3% tolerance reflects Grade B1 specification and is verified under pulsed conditions (PW = 40 ms) to minimize self-heating effects. The HZS10NB1TA-E maintains this range across its qualified operating ambient temperature span.
Does HZS10NB1TA-E support surface-mount assembly?
No, the HZS10NB1TA-E uses the MHD axial-leaded package (JEITA GRZZ0002ZC-A) and is designed for through-hole or high-speed automatic insertion-not reflow-compatible SMT assembly. Its 2.0 mm diameter glass body and 26 mm lead length require wave soldering or selective solder processes. For SMT alternatives, consider Renesas' HZ3 series or other manufacturer's SOD-123 Zeners.
What is the maximum reverse leakage current for HZS10NB1TA-E?
The maximum reverse leakage current for HZS10NB1TA-E is 0.2 μA, measured at VR = 7.0 V and Ta = 25 °C. This ultra-low leakage enables use in high-impedance bias networks and battery-backed circuits where standby current must remain below 1 μA. The HZS10NB1TA-E achieves this via optimized silicon planar junction processing and hermetic glass encapsulation.
Can HZS10NB1TA-E be used in automotive applications?
The HZS10NB1TA-E is classified as a Standard-grade Renesas product, intended for industrial, office, and communications equipment-not automotive or safety-critical systems. It lacks AEC-Q200 qualification and is not rated for the extended temperature or vibration requirements of automotive ECUs. For automotive use, select Renesas' AEC-Q200-qualified Zener families or consult a Renesas sales office for validated alternatives.
How does the temperature coefficient of HZS10NB1TA-E compare to other 10 V Zeners?
The HZS10NB1TA-E exhibits a zener voltage temperature coefficient of approximately –0.02 %/°C near 10 V, placing it in the optimal "zero TC" region for silicon Zeners. This is significantly more stable than generic 10 V Zeners (e.g., ±0.05 %/°C), reducing drift-induced errors in precision references. The HZS10NB1TA-E's γZ is confirmed in Figure 2 of the REJ03G0185-0300 datasheet and applies across its full operating ambient range.
HZS10NB1TA-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS10NB1TA-E FAQ
1.How can I place an order for HZS10NB1TA-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS10NB1TA-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS10NB1TA-E reliable?
The price and inventory of HZS10NB1TA-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS10NB1TA-E is usually 5 days.
3.What payment methods are accepted for HZS10NB1TA-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS10NB1TA-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS10NB1TA-E?
HZS10NB1TA-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS10NB1TA-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS10NB1TA-E?
For technical support, including HZS10NB1TA-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS10NB1TA-E requirements.
6.How does Aetrix verify that HZS10NB1TA-E is sourced from the original manufacturer or authorized distributors?
All HZS10NB1TA-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS10NB1TA-E meets industry standards.
7.What is the process for return or replacement of HZS10NB1TA-E?
All HZS10NB1TA-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS10NB1TA-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS10NB1TA-E part is unused and in its original packaging.
Return procedure for HZS10NB1TA-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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