Renesas HZS11A1TD-E

Overview

HZS11A1TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies, with a nominal zener voltage of 11.6–12.1 V at 5 mA, 400 mW power dissipation, and dynamic resistance of 9.5 Ω, commonly used in reference voltage generation for analog sensor interfaces and microcontroller reset circuits.

For engineers reviewing the HZS11A1TD-E datasheet, HZS11A1TD-E pinout, HZS11A1TD-E application, or HZS11A1TD-E equivalent, this device serves as a discrete voltage reference component requiring accurate reverse-bias characterization, thermal derating awareness, and compatibility with 5 mm-pitch automated insertion processes in industrial control and consumer power management designs.

Technical Context

The HZS11A1TD-E operates as a two-terminal, DC-stabilized voltage reference using silicon planar junction technology. Its zener breakdown mechanism delivers stable reverse conduction above 11.6 V with low leakage (≤1 µA at VR = 9.5 V) and tightly controlled voltage tolerance (±0.5 V at 5 mA).

It exhibits a negative temperature coefficient of approximately −0.04 %/°C near 12 V, necessitating thermal compensation in high-accuracy applications. The device is rated for junction temperatures up to 200°C and storage from −55°C to +175°C, supporting operation in extended industrial environments.

Key Specifications

Pinout & Package

MHD package: axial-lead, glass-encapsulated, cathode band marked, dimensions L = 26.0 mm, φD = 2.0 mm, mass ≈ 0.084 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with 1N4742A and BZX55C12, the HZS11A1TD-E offers tighter voltage tolerance (±0.5 V vs. ±0.6 V), optimized MHD packaging for automated insertion, and lower leakage-making it preferable for compact, high-reliability industrial references where thermal and layout constraints govern selection.

Availability

HZS11A1TD-E is available at Aetrix Electronics and suitable for industrial sensor interfaces, microcontroller reset circuits, and consumer power supply feedback loops requiring stable component supply with consistent parametric performance across production batches.

Supply support for HZS11A1TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and enterprise applications.

The HZS Series was developed by Renesas as a family of precision silicon planar Zener diodes targeting stabilized DC power supply regulation, offering graded voltage options and MHD packaging for high-volume manufacturing reliability.

FAQ

What is the exact zener voltage range specified for HZS11A1TD-E?

The HZS11A1TD-E has a guaranteed zener voltage range of 11.6 V to 12.1 V when tested at I_Z = 5 mA and T_a = 25°C, per Renesas datasheet REJ03G0184-0500 Rev.5.00. This grade (A1) reflects the tightest tolerance bin within the HZS11 family, making HZS11A1TD-E suitable for applications demanding higher initial accuracy without post-production trimming.

Does HZS11A1TD-E support surface-mount assembly?

No, HZS11A1TD-E uses the MHD axial-lead package with 26 mm body length and 2.0 mm diameter, designed specifically for through-hole mounting and 5 mm-pitch high-speed automatic insertion. It is not a surface-mount device; no SMD variant (e.g., SOD-123 or DO-214AC) exists for this exact part number. Engineers selecting HZS11A1TD-E must allocate axial footprint and wave-solder or selective solder process capability.

What is the maximum allowable reverse current before breakdown in HZS11A1TD-E?

The HZS11A1TD-E specifies a maximum reverse leakage current (I_R) of 1 µA at V_R = 9.5 V, well below its nominal zener voltage. This low leakage ensures minimal parasitic loading on upstream sources in battery-critical or high-impedance reference circuits. Operation below 9.5 V guarantees non-conductive behavior, preserving signal integrity in standby or undervoltage monitoring paths involving HZS11A1TD-E.

How does the temperature coefficient affect HZS11A1TD-E in precision applications?

HZS11A1TD-E exhibits a zener voltage temperature coefficient (γ_Z) of approximately −0.04 %/°C near 12 V, meaning its regulated voltage decreases by ~4.8 mV/°C rise. In precision applications such as ADC references or sensor excitation, this drift must be compensated via circuit-level techniques (e.g., complementary tempcos or digital calibration). The datasheet's Fig.2 confirms this value is typical for the 11–12 V range, and HZS11A1TD-E's behavior aligns with that curve.

Is HZS11A1TD-E compliant with RoHS and lead-free assembly requirements?

Yes, HZS11A1TD-E complies with the EU RoHS Directive and is lead-free compatible. Renesas confirms environmental compliance for the HZS Series in accordance with applicable regulations, including restriction of hazardous substances. The MHD package uses lead-free glass-to-metal sealing, and the device supports standard Pb-free reflow profiles when used in hybrid through-hole/reflow processes-though wave solder remains the primary recommended method for HZS11A1TD-E.