Renesas HZS11A2LTD-E

Overview

HZS11A2LTD-E from Renesas Electronics is a silicon planar Zener diode optimized for low-noise voltage reference and stabilization in precision analog circuits, featuring a nominal zener voltage of 9.9 V, dynamic resistance of 8.0 Ω at 0.5 mA, and maximum power dissipation of 400 mW. It delivers low leakage current (≤1 μA at VR = 2.0 V), low zener impedance, and noise performance approximately 1/3–1/10 that of the legacy HZ series - making it suitable for high-stability power supplies and sensor biasing in industrial instrumentation.

For engineers reviewing the HZS11A2LTD-E datasheet, HZS11A2LTD-E pinout, HZS11A2LTD-E application, or HZS11A2LTD-E equivalent, key selection criteria include its 9.7–10.1 V zener voltage tolerance, 8.0 Ω dynamic resistance at 0.5 mA, −55 to +175 °C storage temperature range, and MHD package compatibility with 5 mm-pitch automated insertion.

Technical Context

This device operates as a two-terminal voltage reference using silicon planar junction technology, with zener breakdown engineered for stable regulation under DC test conditions (IZ = 0.5 mA). Its low-noise design targets applications where thermal drift and broadband noise degrade signal integrity - particularly in op-amp references and ADC front-ends.

The HZS11A2LTD-E exhibits a zener voltage temperature coefficient near zero (±0.02 %/°C typical in the 9–11 V range per Fig.2), enabling minimal drift over temperature. Its 200 °C maximum junction temperature and 400 mW power rating support operation in compact PCB layouts with moderate thermal derating.

Key Specifications

Pinout & Package

The HZS11A2LTD-E is housed in the MHD package (JEITA code GRZZ0002ZC-A), a radial-leaded, epoxy-molded device with 2.0 mm diameter leads and 26.0 mm body length, designed for 5 mm-pitch high-speed automatic insertion. Cathode identified by black band.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with 1N4740A and BZX84-C10, the HZS11A2LTD-E provides superior voltage accuracy (±2% vs. ±5%), lower noise, and lower dynamic resistance - making it optimal for high-fidelity analog references where stability and signal integrity are prioritized over package size or power headroom.

Availability

HZS11A2LTD-E is available at Aetrix Electronics and suitable for industrial power supply reference, high-precision sensor biasing, test equipment voltage standard, and analog front-end calibration requiring stable component supply and long-lifecycle continuity.

Supply support for HZS11A2LTD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog & power devices, and system-on-chip solutions for industrial, automotive, and infrastructure markets.

The HZS-L Series was developed by Renesas specifically for low-noise, high-stability voltage reference applications in industrial instrumentation and precision analog systems - emphasizing zener voltage tightness, thermal stability, and manufacturability in automated assembly lines.

FAQ

What is the exact zener voltage range for HZS11A2LTD-E at 0.5 mA test current?

The HZS11A2LTD-E has a guaranteed zener voltage range of 9.7 V minimum to 10.1 V maximum when tested at I_Z = 0.5 mA and T_a = 25 °C. This ±2% tolerance is tighter than standard Zener diodes and supports accurate voltage setting without external trimming in HZS11A2LTD-E-based reference designs.

Does HZS11A2LTD-E support automated PCB assembly?

Yes, the HZS11A2LTD-E uses the MHD package (JEITA code GRZZ0002ZC-A) with standardized 5 mm lead pitch and radial lead geometry, explicitly qualified for high-speed automatic insertion and compatible with wave soldering and selective solder processes - as confirmed in the Renesas HZS-L Series datasheet Rev.3.00.

What is the maximum allowable junction temperature for HZS11A2LTD-E?

The absolute maximum junction temperature for HZS11A2LTD-E is 200 °C, as specified in the Absolute Maximum Ratings table of the official Renesas datasheet (REJ03G0166-0300 Rev.3.00). This allows sustained operation in thermally demanding environments when combined with appropriate PCB copper area and ambient derating.

How does the noise performance of HZS11A2LTD-E compare to legacy Zener diodes?

The HZS11A2LTD-E achieves approximately 1/3 to 1/10 the noise level of the older HZ series Zener diodes, as stated in the Features section of the Renesas datasheet. This low-noise characteristic is intrinsic to its silicon planar construction and process optimization - directly improving signal-to-noise ratio in HZS11A2LTD-E-referenced analog circuits.

Is HZS11A2LTD-E suitable for automotive applications?

No - the HZS11A2LTD-E is rated as a "Standard" quality grade device per Renesas' classification, intended for industrial, office, and communications equipment. It is not qualified for automotive use (which requires "High Quality" grade), and Renesas explicitly excludes transportation equipment from the recommended applications for the HZS-L Series.