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Renesas HZS11A3TD-E
- Part No.:
- HZS11A3TD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS11A3TD-E.pdf
- Description:
- DIODE ZENER 0.4W
- Quantity:
- Payment:
- Shipping:
Inventory:12,500
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Product details
Overview
HZS11A3TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies, with a nominal zener voltage of 11.4–11.9 V at 5 mA test current, 7.5 Ω dynamic resistance, and 400 mW maximum power dissipation in the MHD package. It operates across −55°C to +175°C storage temperature range and supports high-speed automatic insertion on 5 mm-pitch PCBs.
For engineers reviewing the HZS11A3TD-E datasheet, HZS11A3TD-E pinout, HZS11A3TD-E application, or HZS11A3TD-E equivalent, this device serves as a low-leakage, low-impedance voltage reference for industrial control power rails, sensor biasing circuits, and overvoltage protection clamping where stable 11.6–12.1 V regulation under 1 mA to 5 mA conditions is required.
Technical Context
The HZS11A3TD-E implements a silicon planar junction structure optimized for tight zener voltage tolerance (±0.5 V at 11.6–12.1 V nominal), low dynamic impedance (7.5 Ω at IZ = 5 mA), and minimal temperature coefficient (−0.04 %/°C typical). Its design targets DC-stable reference generation rather than transient suppression.
It is rated for 400 mW total power dissipation at Ta = 25°C, with derating to zero at 150°C ambient per the published thermal curve. The device exhibits reverse leakage ≤1 µA at VR = 9.5 V and junction temperature up to 200°C - enabling use in thermally constrained embedded power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 11.4–11.9 V at IZ = 5 mA - defines precise regulation point for mid-range analog supply rails. |
| Dynamic Resistance (rd) | 7.5 Ω at IZ = 5 mA - ensures minimal output voltage shift under load current variation. |
| Power Dissipation (Pd) | 400 mW max at Ta = 25°C - supports compact PCB layout without forced cooling in low-current applications. |
| Reverse Leakage (IR) | ≤1 µA at VR = 9.5 V - maintains high impedance in off-state, critical for low-power bias networks. |
| Junction Temperature (Tj) | 200°C max - enables operation in high-ambient environments such as industrial motor drives or automotive under-hood modules. |
| Package | MHD (JEITA GRZZ0002ZC-A) - 2-pin axial lead, 2.0 mm diameter, 26 mm length; compatible with 5 mm-pitch auto-insertion equipment. |
Pinout & Package
MHD package: axial-leaded, hermetically sealed glass body with lake-blue cathode band. Dimensions: φD = 2.0 mm (nom), L = 26.0 mm (min), E = 2.4 mm (max), mass ≈ 0.084 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Banded End) | Cathode | Connected to regulated output node; polarity-sensitive for correct biasing in shunt regulator configuration. |
| 2 (Non-banded End) | Anode | Connected to ground or low-impedance return path; completes current path during zener conduction. |
Key Features
| Feature | Design Value |
|---|---|
| Low zener impedance | 7.5 Ω at 5 mA - reduces output voltage ripple under varying load, improving stability in feedback-sensing circuits. |
| Wide zener voltage range coverage | 1.6–38 V across HZS series - allows single-family selection for diverse rail voltages without redesigning regulator topology. |
| High-temperature capability | Tj = 200°C - supports deployment in engine-control units, power converters, and industrial PLCs with elevated ambient temperatures. |
| Automated assembly compatibility | 5 mm pitch, MHD form factor - enables high-throughput placement using standard axial component feeders and insertion machines. |
Applications
| Industrial Power Monitoring | Automotive Sensor Biasing |
|---|---|
|
Use Scenario: Monitoring 12 V battery-derived rails in programmable logic controllers with ±5% tolerance requirements. IC Role / Device Role / Timing Role: Shunt voltage reference providing stable 11.6–12.1 V reference for ADC input scaling and comparator thresholds. Use Value: Maintains measurement accuracy across −40°C to +85°C operating range due to low temperature coefficient and 1 µA leakage at 9.5 V. |
Use Scenario: Supplying precise bias voltage to Hall-effect position sensors in throttle-body assemblies. IC Role / Device Role / Timing Role: Low-noise, low-drift voltage clamp ensuring consistent sensor output amplitude despite battery voltage fluctuations. Use Value: 7.5 Ω dynamic resistance minimizes sensor gain drift caused by supply ripple, supporting ASIL-B functional safety compliance. |
| Consumer Audio DC-DC Feedback | Medical Diagnostic Instrumentation |
|
Use Scenario: Regulating auxiliary 12 V rail in Class-D amplifier power stages with switching noise immunity requirements. IC Role / Device Role / Timing Role: Zener-based feedback node in isolated flyback converter secondary-side regulation loop. Use Value: 400 mW power rating accommodates peak load transients without thermal runaway; glass package resists moisture-induced parameter shift. |
Use Scenario: Providing reference voltage for analog front-end circuitry in portable ultrasound probe signal conditioning. IC Role / Device Role / Timing Role: Precision shunt reference stabilizing op-amp bias points in low-power, battery-operated diagnostic subsystems. Use Value: ≤1 µA reverse leakage preserves battery life over multi-year deployments while maintaining 0.5 V zener tolerance at end-of-life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4742A (ON Semiconductor) | Zener voltage 12 V ±5%, rd = 9 Ω, Pd = 1 W, DO-41 package (larger footprint, higher thermal mass). | Higher power handling but less suitable for space-constrained 5 mm-pitch automated assembly. | Select when >400 mW continuous dissipation is required and board area permits DO-41 mounting. |
| BZX84-C12 (Diodes Inc.) | Zener voltage 12 V ±5%, rd = 25 Ω, Pd = 300 mW, SOT-23 surface-mount package. | Smaller size but higher impedance and lower power - unsuitable for high-accuracy analog references. | Select only for cost-sensitive, low-precision digital clamping where 25 Ω rd is acceptable. |
Compared with 1N4742A and BZX84-C12, the HZS11A3TD-E delivers tighter voltage tolerance (±0.5 V vs. ±5%), lower dynamic impedance (7.5 Ω vs. 9–25 Ω), and MHD packaging optimized for high-volume through-hole insertion - making it preferred for industrial-grade analog reference designs requiring long-term stability and automated manufacturability.
Availability
HZS11A3TD-E is available at Aetrix Electronics and suitable for industrial power monitoring, automotive sensor biasing, consumer audio DC-DC feedback, and medical diagnostic instrumentation requiring stable component supply with full traceability and lifecycle continuity.
Supply support for HZS11A3TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and enterprise systems.
The HZS Series belongs to Renesas' legacy discrete portfolio focused on high-reliability silicon planar Zener diodes for precision voltage stabilization in harsh-environment power management applications.
FAQ
What is the exact zener voltage range specified for HZS11A3TD-E at 5 mA test current?
The HZS11A3TD-E has a guaranteed zener voltage range of 11.4 V to 11.9 V when tested at IZ = 5 mA and Ta = 25°C, corresponding to Grade C3 within the HZS11 family. This 0.5 V window supports tight-tolerance regulation without external trimming, and the value is confirmed in Renesas document REJ03G0184-0500 Rev.5.00, Page 3.
Does HZS11A3TD-E support operation above 100°C ambient temperature?
Yes, the HZS11A3TD-E is rated for storage from −55°C to +175°C and junction temperature up to 200°C. Its power dissipation derates linearly from 400 mW at 25°C to zero at approximately 150°C ambient, enabling reliable operation in industrial enclosures or automotive under-dash locations where ambient reaches 105°C - provided board-level thermal design maintains Tj ≤ 200°C.
What is the reverse leakage current specification for HZS11A3TD-E, and at what voltage is it measured?
The HZS11A3TD-E specifies maximum reverse leakage current of 1 µA at VR = 9.5 V and Ta = 25°C. This low leakage ensures minimal quiescent current draw in battery-powered or energy-harvesting applications, and directly supports its use in high-impedance bias networks where even nanoamp-level errors degrade accuracy.
Is HZS11A3TD-E compatible with high-speed automatic insertion equipment?
Yes, the HZS11A3TD-E uses the MHD package (JEITA GRZZ0002ZC-A) explicitly designed for 5 mm-pitch high-speed automatic insertion. Its axial lead geometry, consistent 2.0 mm diameter, and lake-blue cathode band enable reliable orientation detection and placement - confirmed in the "Ordering Information" section of Renesas REJ03G0184-0500, Page 1.
What is the dynamic resistance of HZS11A3TD-E, and why does it matter for regulation performance?
The HZS11A3TD-E has a dynamic resistance of 7.5 Ω at IZ = 5 mA. This low value means the output voltage changes only ~37.5 mV for every 5 mA change in load current - critical for maintaining stable reference voltage in analog circuits like ADC drivers or op-amp bias networks where supply ripple rejection directly impacts measurement fidelity.
HZS11A3TD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS11A3TD-E FAQ
1.How can I place an order for HZS11A3TD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS11A3TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS11A3TD-E reliable?
The price and inventory of HZS11A3TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS11A3TD-E is usually 5 days.
3.What payment methods are accepted for HZS11A3TD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS11A3TD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS11A3TD-E?
HZS11A3TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS11A3TD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS11A3TD-E?
For technical support, including HZS11A3TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS11A3TD-E requirements.
6.How does Aetrix verify that HZS11A3TD-E is sourced from the original manufacturer or authorized distributors?
All HZS11A3TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS11A3TD-E meets industry standards.
7.What is the process for return or replacement of HZS11A3TD-E?
All HZS11A3TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS11A3TD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS11A3TD-E part is unused and in its original packaging.
Return procedure for HZS11A3TD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZS11A3TD-E Tags
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