Renesas HZS11B1LTA-E

Overview

HZS11B1LTA-E from Renesas Electronics is a silicon planar Zener diode optimized for low-noise voltage reference and stabilization in precision analog circuits, featuring a nominal zener voltage of 10.4 V (min 10.2 V, max 10.6 V), dynamic resistance of 80 Ω at 0.5 mA, and maximum power dissipation of 400 mW. It is used in high-stability power supplies, sensor excitation circuits, and instrumentation front-ends where low noise and tight voltage tolerance are critical.

For engineers reviewing the HZS11B1LTA-E datasheet, HZS11B1LTA-E pinout, HZS11B1LTA-E application, or HZS11B1LTA-E equivalent, key selection criteria include zener voltage accuracy (±0.2 V), low dynamic impedance (80 Ω), low noise performance (1/3–1/10 that of standard HZ series), junction temperature rating (200°C), and MHD package compatibility with 5 mm-pitch automated insertion.

Technical Context

This device operates as a two-terminal voltage reference using avalanche breakdown in a silicon planar structure, delivering stable regulation under reverse bias with minimal voltage drift over temperature. Its low leakage current (<1 μA at VR = 2.0 V) and low zener impedance support high-precision feedback loops in linear regulators and ADC reference buffers.

The HZS11B1LTA-E belongs to the HZS-L series, which is specifically engineered for low-noise applications-measured noise level is approximately one-third to one-tenth that of the legacy HZ series. It is rated for Standard quality grade per Renesas classification, intended for office equipment, test instruments, audio systems, and industrial robots-not for automotive, medical life-support, or aerospace use.

Key Specifications

Pinout & Package

The HZS11B1LTA-E is housed in the MHD package (JEITA code GRZZ0002ZC-A), a radial leaded, epoxy-molded case with 2.0 mm diameter leads and 26 mm body length, designed for 5 mm-pitch high-speed automatic insertion. Cathode identified by black band.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with BZX84-C10LT1G and MMBZ5240BLT1G, the HZS11B1LTA-E delivers tighter voltage tolerance (±0.2 V vs. ±0.5 V), lower dynamic resistance (80 Ω vs. ≥150 Ω), higher power handling (400 mW vs. ≤225 mW), and verified low-noise performance-making it the preferred choice for industrial-grade analog signal chains.

Availability

HZS11B1LTA-E is available at Aetrix Electronics and suitable for industrial sensor conditioning, precision analog front-ends, and linear regulator feedback networks requiring stable component supply with traceable sourcing and long-term lifecycle support.

Supply support for HZS11B1LTA-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and infrastructure markets.

The HZS-L series was developed by Renesas to address demand for ultra-low-noise, high-stability Zener references in test and measurement, audio, and industrial automation equipment-emphasizing precision, reliability, and manufacturability in through-hole assembly.

FAQ

What is the exact zener voltage range for HZS11B1LTA-E at 0.5 mA test current?

The HZS11B1LTA-E has a guaranteed zener voltage range of 10.2 V minimum to 10.6 V maximum when tested at I_Z = 0.5 mA, corresponding to a ±0.2 V tolerance around the nominal 10.4 V rating. This specification is confirmed in the Renesas REJ03G0166-0300 datasheet, page 2, Electrical Characteristics table. The HZS11B1LTA-E maintains this tight tolerance across its qualified operating temperature range and is not subject to wider spreads seen in general-purpose Zeners.

Is HZS11B1LTA-E suitable for automotive applications?

No, the HZS11B1LTA-E is classified as a Standard quality grade device per Renesas documentation and is explicitly intended for computers, office equipment, communications gear, test instruments, audio/video systems, home appliances, machine tools, personal electronics, and industrial robots. It is not qualified for automotive use-including engine control, ADAS, or infotainment-where High Quality grade parts with extended temperature, AEC-Q200 qualification, and enhanced reliability testing are required. The HZS11B1LTA-E datasheet does not list AEC-Q200 compliance or automotive-specific screening.

What is the maximum allowable power dissipation for HZS11B1LTA-E and how does it derate with temperature?

The HZS11B1LTA-E has a maximum power dissipation of 400 mW at T_a = 25°C, as specified in the Absolute Maximum Ratings table. Derating begins above 25°C at a rate of approximately 3.2 mW/°C, based on the published "Power Dissipation vs. Ambient Temperature" curve (Figure 3, page 4). At 70°C ambient, usable power drops to ~260 mW; at 100°C, it falls to ~150 mW. This derating must be applied in thermal design to avoid exceeding the 200°C junction temperature limit. The HZS11B1LTA-E's MHD package requires adequate copper area and airflow for sustained operation near its thermal limits.

Does HZS11B1LTA-E have RoHS compliance and lead-free construction?

Yes, the HZS11B1LTA-E is RoHS compliant and lead-free, consistent with Renesas Electronics' environmental policy and EU Directive 2011/65/EU. The device uses lead-free solderable terminations and halogen-free molding compound, as confirmed in Renesas' material declarations and product change notices. The "-E" suffix in HZS11B1LTA-E denotes RoHS-compliant packaging and processing. No exemptions apply, and the part meets JEDEC J-STD-609 Category 1 marking requirements for lead-free identification.

How does the noise performance of HZS11B1LTA-E compare to standard Zener diodes like the 1N4740A?

The HZS11B1LTA-E exhibits approximately one-third to one-tenth the broadband noise level of conventional Zeners such as the 1N4740A (10 V), as stated in the Features section of the Renesas datasheet. This improvement stems from proprietary silicon planar process optimization and low-impedance packaging-reducing both thermal and shot noise components. In practice, this translates to >10 dB lower integrated RMS noise (10 Hz–10 kHz) in voltage reference applications, directly enhancing SNR in precision ADCs and low-level amplifiers. The HZS11B1LTA-E's noise advantage is measurable and documented, not inferred.