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Renesas HZS11B2TD-E
- Part No.:
- HZS11B2TD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS11B2TD-E.pdf
- Description:
- DIODE ZENER 0.4W
- Quantity:
- Payment:
- Shipping:
Inventory:5,000
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Product details
Overview
HZS11B2TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies, with a nominal zener voltage of 11.6–11.9 V at 5 mA, 7.5 Ω dynamic resistance, 400 mW power dissipation, and −55 to +175 °C storage temperature range - deployed in office equipment and industrial control power rails.
For engineers reviewing the HZS11B2TD-E datasheet, HZS11B2TD-E pinout, HZS11B2TD-E application, or HZS11B2TD-E equivalent, key selection criteria include zener voltage tolerance (±0.3 V), low dynamic impedance for ripple suppression, MHD package compatibility with 5 mm-pitch auto-insertion, and suitability for non-safety-critical Standard-grade applications per Renesas quality classification.
Technical Context
The HZS11B2TD-E operates as a two-terminal shunt regulator, maintaining stable output voltage by conducting reverse current above its breakdown threshold. Its silicon planar construction ensures consistent VZ across production lots and low leakage (<25 µA at 0.5 V below VZ).
It exhibits a negative zener voltage temperature coefficient (~−0.04 %/°C at 11.6–11.9 V), requiring thermal derating above 25 °C ambient per the published Pd vs. Ta curve. The device is rated for junction temperatures up to 200 °C but must be operated within absolute maximum ratings to avoid parametric shift or failure.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 11.6 V min / 11.9 V max at IZ = 5 mA - defines regulated output voltage window under nominal bias. |
| Dynamic Resistance (rd) | 7.5 Ω max at IZ = 5 mA - determines AC ripple rejection capability; lower rd improves load/line regulation. |
| Power Dissipation (Pd) | 400 mW at Ta = 25 °C - sets maximum continuous DC power handling before thermal derating applies. |
| Reverse Current (IR) | 25 µA max at VR = 0.5 V below VZ - indicates low leakage, critical for standby power integrity. |
| Junction Temperature (Tj) | 200 °C max - enables operation in high-ambient industrial environments when properly heatsinked or PCB-trace cooled. |
| Storage Temperature | −55 to +175 °C - supports extended environmental qualification for industrial storage and reflow assembly. |
Pinout & Package
Package: MHD (JEITA code GRZZ0002ZC-A), molded plastic, 2-pin axial leaded, 2.0 mm diameter × 26.0 mm length, 5 mm pitch compatible, mass ≈ 0.084 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Zener cathode terminal | Connected to regulated positive rail; reverse-biased during regulation; marked with lake-blue band. |
| 2 (Anode) | Zener anode terminal | Connected to circuit ground or lower potential; completes shunt path for excess current dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| Low zener impedance | 7.5 Ω max ensures minimal output voltage variation under dynamic load changes. |
| Wide VZ spectrum (1.6–38 V) | Enables single-family sourcing across diverse supply rails without redesigning regulation topology. |
| 400 mW power rating | Supports direct shunt regulation in sub-100 mA auxiliary supplies without external pass devices. |
| Lake-blue cathode band marking | Provides unambiguous polarity identification for automated optical inspection and manual assembly verification. |
| MHD package with 5 mm pitch | Optimized for high-speed automatic insertion in legacy through-hole manufacturing lines. |
Applications
| Industrial Sensor Signal Conditioning | Office Equipment Power Sequencing |
|---|---|
Use Scenario: Providing reference voltage for analog front-ends in 4–20 mA loop-powered sensors operating in factory-floor environments. IC Role / Device Role / Timing Role: Shunt voltage reference stabilizing local LDO input or op-amp bias network. Use Value: Maintains ±0.3 V regulation accuracy over temperature and line variations, ensuring sensor output linearity remains within 0.1% FS. |
Use Scenario: Generating clean 12 V standby rail for microcontroller reset supervision and EEPROM backup in multifunction printers. IC Role / Device Role / Timing Role: Low-power zener clamp regulating VREF for voltage monitor ICs. Use Value: Delivers stable 11.75 V nominal reference with <25 µA leakage, minimizing quiescent current in always-on subsystems. |
| Test & Measurement Instrumentation | Audio Equipment Power Filtering |
Use Scenario: Biasing precision DAC buffers in portable multimeters where board space limits use of active references. IC Role / Device Role / Timing Role: Passive voltage reference establishing mid-rail for single-supply op-amp stages. Use Value: Achieves 7.5 Ω dynamic impedance to suppress switching noise from shared SMPS rails, preserving measurement SNR > 85 dB. |
Use Scenario: Post-regulation ripple suppression on 12 V analog audio supply rails in active speaker amplifiers. IC Role / Device Role / Timing Role: Shunt filter absorbing high-frequency noise above 100 kHz from adjacent digital sections. Use Value: Reduces 500 kHz switching artifacts by >20 dB via low-impedance path to ground without adding active components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4742A (ON Semiconductor) | VZ = 12 V ±5%, rd = 9 Ω, Pd = 1 W, DO-41 package | Higher power and looser tolerance; requires PCB layout change due to larger DO-41 footprint | Select when higher surge energy handling is required and 12 V ±5% is acceptable. |
| BZX55C12 (Vishay) | VZ = 12 V ±5%, rd = 15 Ω, Pd = 500 mW, DO-35 package | Higher dynamic resistance degrades ripple rejection; smaller DO-35 leads require retooling for auto-insertion | Choose only if cost sensitivity outweighs regulation precision and MHD compatibility. |
Compared with HZS11B2TD-E, the 1N4742A offers higher power margin but sacrifices voltage accuracy and package compatibility, while the BZX55C12 trades off regulation stability and manufacturability for lower unit cost - making HZS11B2TD-E optimal for precision, volume-through-hole, and Standard-grade industrial designs.
Availability
HZS11B2TD-E is available at Aetrix Electronics and suitable for industrial sensor signal conditioning, office equipment power sequencing, and test & measurement instrumentation requiring stable component supply, long-term obsolescence management, and JEDEC-compliant traceability.
Supply support for HZS11B2TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and enterprise applications.
The HZS Series is part of Renesas' discrete diode portfolio, engineered specifically for reliable, low-drift voltage stabilization in Standard-grade commercial and industrial power systems - emphasizing consistency, manufacturability, and long-lifecycle support.
FAQ
What is the exact zener voltage range for HZS11B2TD-E at 5 mA test current?
The HZS11B2TD-E has a guaranteed zener voltage range of 11.6 V minimum to 11.9 V maximum when tested at IZ = 5 mA and Ta = 25 °C, per Renesas datasheet REJ03G0184-0500 Rev.5.00. This 0.3 V tolerance reflects tight binning for precision regulation applications, and the "B2" grade designation confirms this specific range within the HZS11 family.
Is HZS11B2TD-E suitable for automotive applications?
No, HZS11B2TD-E is classified as a Standard-grade Renesas product, intended for computers, office equipment, communications gear, and industrial robots - not for automotive or safety-critical systems. It lacks AEC-Q101 qualification and is not rated for the temperature cycling, vibration, or lifetime reliability requirements of vehicle ECUs or ADAS modules.
What does the "TD-E" suffix indicate in HZS11B2TD-E?
The "TD-E" suffix in HZS11B2TD-E denotes Renesas' internal tape-and-reel packaging variant compliant with EIA-481-D standards: "T" = tape, "D" = embossed carrier tape, "E" = 3,000 units per reel. This format supports automated SMT placement equipment, though the MHD package itself is axial-leaded and intended for through-hole insertion.
Can HZS11B2TD-E replace a 12 V zener diode in an existing design?
Replacing a 12 V zener with HZS11B2TD-E requires validation: its 11.6–11.9 V range is ~0.1–0.4 V lower than nominal 12 V parts like 1N4742A. System-level testing must confirm that downstream LDOs, supervisors, or references remain within their input voltage specifications under all operating conditions including temperature drift and line/load transients.
What is the maximum allowable ambient temperature for full 400 mW operation of HZS11B2TD-E?
HZS11B2TD-E delivers its full 400 mW power dissipation rating only at Ta = 25 °C. Above this, derating is required per Figure 3 in the datasheet: at 70 °C ambient, maximum dissipation drops to ~250 mW; at 100 °C, it falls to ~120 mW. Thermal design must account for PCB copper area, airflow, and proximity to heat sources to avoid exceeding Tj = 200 °C.
HZS11B2TD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS11B2TD-E FAQ
1.How can I place an order for HZS11B2TD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS11B2TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS11B2TD-E reliable?
The price and inventory of HZS11B2TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS11B2TD-E is usually 5 days.
3.What payment methods are accepted for HZS11B2TD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS11B2TD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS11B2TD-E?
HZS11B2TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS11B2TD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS11B2TD-E?
For technical support, including HZS11B2TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS11B2TD-E requirements.
6.How does Aetrix verify that HZS11B2TD-E is sourced from the original manufacturer or authorized distributors?
All HZS11B2TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS11B2TD-E meets industry standards.
7.What is the process for return or replacement of HZS11B2TD-E?
All HZS11B2TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS11B2TD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS11B2TD-E part is unused and in its original packaging.
Return procedure for HZS11B2TD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZS11B2TD-E Tags
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