My Inquiry
My Account
Renesas HZS11C3TD-E
- Part No.:
- HZS11C3TD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS11C3TD-E.pdf
- Description:
- DIODE ZENER 0.4W
- Quantity:
- Payment:
- Shipping:
Inventory:2,500
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
HZS11C3TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies, with a nominal zener voltage of 11.4–11.9 V at 5 mA, 7.5 Ω dynamic resistance, and 400 mW power dissipation in the MHD package. It operates across −55°C to +175°C storage temperature and supports high-speed automatic insertion on 5 mm-pitch PCBs.
For engineers reviewing the HZS11C3TD-E datasheet, HZS11C3TD-E pinout, HZS11C3TD-E application, or HZS11C3TD-E equivalent, this device serves as a stable reference or clamp in analog front-ends, sensor biasing circuits, and overvoltage protection stages where tight voltage tolerance (±0.5 V), low leakage (<5 µA at VR = 9.5 V), and predictable temperature coefficient are critical.
Technical Context
This Zener diode employs a silicon planar junction structure optimized for low dynamic impedance and minimal voltage drift over temperature. Its zener voltage is specified at IZ = 5 mA with test condition VR = 9.5 V, ensuring consistent clamping behavior under defined reverse-bias conditions.
The device exhibits a negative temperature coefficient of approximately −0.04 %/°C near 11.7 V, enabling predictable thermal compensation when paired with positive-TC components. It is rated for junction temperatures up to 200°C and conforms to Renesas' Standard quality grade for industrial and consumer applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 11.4–11.9 V at IZ = 5 mA - defines precise clamping threshold for overvoltage protection or reference generation |
| Dynamic Resistance (rd) | 7.5 Ω max at IZ = 5 mA - ensures minimal output voltage variation under load current changes |
| Power Dissipation (Pd) | 400 mW - sets maximum continuous reverse power handling without thermal runaway |
| Reverse Current (IR) | <5 µA at VR = 9.5 V - guarantees low standby leakage in battery-powered or high-impedance bias networks |
| Junction Temperature (Tj) | 200°C max - enables reliable operation in thermally demanding environments such as enclosed industrial enclosures |
| Storage Temperature | −55°C to +175°C - supports wide-range logistics, reflow soldering, and extended field deployment |
| Zener Test Current | 5 mA - standard operating point for specification compliance and design margin verification |
Pinout & Package
Package: MHD (JEITA code GRZZ0002ZC-A), molded plastic, 2-pin axial lead, 2.0 mm diameter × 26.0 mm length, 0.084 g typical mass, cathode band marked on body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Reverse-biased terminal | Connected to higher potential node; carries regulated output or clamped voltage in shunt configuration |
| 2 (Anode) | Forward-biased terminal | Connected to ground or lower potential; completes current path during zener conduction |
Key Features
| Feature | Design Value |
|---|---|
| Low dynamic impedance | 7.5 Ω max ensures stable regulation under varying load currents in feedback or reference paths |
| Wide zener voltage range coverage | Part of HZS Series spanning 1.6–38 V - allows selection of exact voltage grade (C3) without redesign |
| High-speed auto-insertion compatibility | 5 mm pitch and standardized MHD dimensions support automated through-hole assembly with zero orientation ambiguity |
| Low leakage current | <5 µA at 9.5 V enables use in ultra-low-power sensor biasing and battery-backed circuits |
| Robust thermal rating | 200°C junction temperature supports operation in sealed enclosures or near heat-generating components |
Applications
| Industrial Power Monitoring | Automotive Sensor Biasing |
|---|---|
|
Use Scenario: Monitoring 12 V rail voltage in PLC I/O modules using resistive divider + comparator. IC Role / Device Role / Timing Role: Zener reference for comparator threshold setting. Use Value: Tight 11.4–11.9 V tolerance ensures accurate detection of undervoltage (e.g., <11.0 V) without calibration drift. |
Use Scenario: Providing stable 11.7 V bias to Hall-effect position sensors in engine control units. IC Role / Device Role / Timing Role: Voltage clamp and reference source for analog signal conditioning. Use Value: Low 7.5 Ω rd maintains bias stability despite EMI-induced current transients on supply lines. |
| Consumer Audio DC-DC Feedback | Medical Instrumentation Reference |
|
Use Scenario: Secondary-side voltage sensing in isolated flyback converters powering headphone amplifiers. IC Role / Device Role / Timing Role: Shunt regulator in optocoupler feedback loop. Use Value: 400 mW Pd accommodates transient surges while maintaining ±1% regulation over line/load variations. |
Use Scenario: Precision reference for ADC input scaling in portable blood glucose meters. IC Role / Device Role / Timing Role: Stable voltage reference for ratiometric sensor excitation. Use Value: −55°C to +175°C storage rating supports reflow soldering and long-term shelf life without parameter shift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4742A (ON Semiconductor) | Zener voltage 12 V ±5%, rd = 9 Ω, Pd = 1 W, DO-41 package | Higher power and looser tolerance; requires layout change for axial lead spacing | Select when higher surge energy handling is needed and 12 V nominal is acceptable |
| BZX55-C12 (Vishay) | Zener voltage 12 V ±5%, rd = 15 Ω, Pd = 500 mW, DO-35 package | Higher dynamic impedance and different package footprint; not drop-in compatible | Choose for cost-sensitive designs where tighter regulation is non-critical and DO-35 is preferred |
Compared with 1N4742A and BZX55-C12, HZS11C3TD-E offers tighter voltage tolerance (±0.5 V vs. ±5%), lower dynamic impedance (7.5 Ω vs. ≥9 Ω), and MHD packaging optimized for high-speed insertion-making it preferable for space-constrained, precision-regulated industrial and automotive subsystems.
Availability
HZS11C3TD-E is available at Aetrix Electronics and suitable for industrial power monitoring, automotive sensor biasing, consumer audio DC-DC feedback, and medical instrumentation reference applications requiring stable component supply, long-lifecycle continuity, and RoHS-compliant sourcing.
Supply support for HZS11C3TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT markets.
HZS11C3TD-E belongs to the HZS Series silicon planar Zener diodes, engineered specifically for stabilized power supply circuits requiring low leakage, low impedance, and high-reliability voltage reference performance in compact axial packages.
FAQ
What is the zener voltage tolerance for HZS11C3TD-E?
The HZS11C3TD-E has a zener voltage range of 11.4 V to 11.9 V at IZ = 5 mA, corresponding to a ±0.5 V absolute tolerance. This tight window is specified per the C3 grade in the HZS Series datasheet (REJ03G0184-0500 Rev.5.00) and reflects its suitability for precision regulation tasks where nominal 11.7 V operation is required without post-production trimming. The HZS11C3TD-E achieves this via controlled planar junction doping and screening.
Does HZS11C3TD-E support automatic insertion on standard PCBs?
Yes, the HZS11C3TD-E uses the MHD package (JEITA code GRZZ0002ZC-A) with 5 mm lead pitch and standardized axial geometry, explicitly designed for high-speed automatic insertion equipment. Its 2.0 mm diameter body and 26.0 mm length comply with industry-standard feeders and placement nozzles, eliminating manual orientation steps. The HZS11C3TD-E's lake-blue cathode band provides unambiguous polarity identification during vision-based inspection.
What is the maximum reverse current for HZS11C3TD-E at 9.5 V?
The HZS11C3TD-E guarantees a maximum reverse current (IR) of 5 µA when tested at VR = 9.5 V and Ta = 25°C, as stated in the Electrical Characteristics table on page 2 of REJ03G0184-0500. This low leakage supports energy-efficient designs-such as battery-powered sensor nodes-where standby current must remain below 10 µA. The HZS11C3TD-E maintains this spec across its full storage temperature range due to its silicon planar construction.
Can HZS11C3TD-E be used in automotive under-hood applications?
The HZS11C3TD-E is rated for junction temperatures up to 200°C and storage from −55°C to +175°C, meeting thermal requirements for many under-hood locations. However, Renesas classifies it as "Standard" grade-not "High Quality"-so it is not qualified for safety-critical automotive functions like engine control or braking. The HZS11C3TD-E may be used in non-safety automotive subsystems (e.g., cabin lighting control, infotainment power rails) provided system-level validation confirms reliability under vibration, humidity, and thermal cycling per AEC-Q200 guidelines.
What is the dynamic resistance of HZS11C3TD-E and why does it matter?
The HZS11C3TD-E has a maximum dynamic resistance (rd) of 7.5 Ω at IZ = 5 mA, measured with DC. This value quantifies how much the zener voltage changes per unit change in current-lower rd means better regulation stability. In practice, the HZS11C3TD-E's 7.5 Ω rd limits output variation to <38 mV for a ±5 mA load swing, making it ideal for feedback loops and reference buffers where ripple rejection and accuracy are essential.
HZS11C3TD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS11C3TD-E FAQ
1.How can I place an order for HZS11C3TD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS11C3TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS11C3TD-E reliable?
The price and inventory of HZS11C3TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS11C3TD-E is usually 5 days.
3.What payment methods are accepted for HZS11C3TD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS11C3TD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS11C3TD-E?
HZS11C3TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS11C3TD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS11C3TD-E?
For technical support, including HZS11C3TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS11C3TD-E requirements.
6.How does Aetrix verify that HZS11C3TD-E is sourced from the original manufacturer or authorized distributors?
All HZS11C3TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS11C3TD-E meets industry standards.
7.What is the process for return or replacement of HZS11C3TD-E?
All HZS11C3TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS11C3TD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS11C3TD-E part is unused and in its original packaging.
Return procedure for HZS11C3TD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZS11C3TD-E Tags
-
MMBZ5240B-7-F
Diodes Incorporated
-
BZT52C5V6T-7
Diodes Incorporated
-
MMSZ5231B-7-F
Diodes Incorporated
-
BZT52C15-7-F
Diodes Incorporated
-
BZX84C3V3LT1G
onsemi
-
MMSZ5245BS-7-F
Diodes Incorporated
-
MMSZ4682T1G
onsemi
-
BZT52C15S-7-F
Diodes Incorporated
-
MM5Z5V1ST1G
onsemi
-
SMAJ4744A-TP
Micro Commercial Co
-
BZT52C3V6LP-7
Diodes Incorporated
-
SMAZ12-13-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
