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Renesas HZS11NB3TD-E
- Part No.:
- HZS11NB3TD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS11NB3TD-E.pdf
- Description:
- DIODE ZENER 0.4W
- Quantity:
- Payment:
- Shipping:
Inventory:2,500
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Product details
Overview
HZS11NB3TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in stabilized power supplies, with a nominal zener voltage of 10.82–11.26 V at 5 mA test current, 400 mW power dissipation, and dynamic resistance of 8.0 Ω - used in low-noise reference circuits and overvoltage protection for microcontroller I/O rails.
For engineers reviewing the HZS11NB3TD-E datasheet, HZS11NB3TD-E pinout, HZS11NB3TD-E application, or HZS11NB3TD-E equivalent, key selection criteria include zener voltage tolerance (Grade B3), thermal coefficient (±0.04 %/°C near 11 V), junction temperature limit (200°C), and compatibility with 5 mm-pitch automated insertion in industrial control PCBs.
Technical Context
This device operates as a two-terminal shunt regulator, maintaining stable output voltage across varying load currents by conducting reverse-biased current above its specified zener breakdown threshold. Its planar construction ensures consistent breakdown characteristics and low leakage (<0.2 μA at VR = 7.0 V).
The HZS11NB3TD-E exhibits a positive temperature coefficient near 11 V (≈+0.04 %/°C), enabling predictable drift compensation in multi-diode reference designs. It is rated for operation from –55°C to +175°C storage and up to 200°C junction temperature under defined thermal conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 10.82–11.26 V at IZ = 5 mA - defines precise clamping threshold for 12 V rail stabilization |
| Dynamic Resistance (rd) | 8.0 Ω max at IZ = 5 mA - ensures minimal output voltage variation under load transients |
| Power Dissipation (Pd) | 400 mW - supports continuous regulation in compact SMD-compatible through-hole packages without forced cooling |
| Reverse Leakage (IR) | ≤0.2 μA at VR = 7.0 V - guarantees low standby current in battery-backed reference circuits |
| Junction Temperature (Tj) | 200°C max - enables reliable operation in high-ambient industrial environments (e.g., motor drives, PLC modules) |
| Zener Temp. Coefficient | +0.04 %/°C typical at 11 V - allows predictable thermal drift modeling in precision analog subsystems |
Pinout & Package
Package: MHD (JEITA code GRZZ0002ZC-A), axial-lead, 2.0 mm diameter glass body, 26.0 mm length, 0.4 mm lead diameter - optimized for high-speed automatic insertion on 5 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Zener terminal with black band marking | Connected to regulated voltage node; reverse-biased operation requires cathode at higher potential than anode |
| 2 (Anode) | Reference ground/reference return | Typically tied to system ground or lower-voltage rail; completes current path during regulation |
Key Features
| Feature | Design Value |
|---|---|
| Low dynamic impedance | 8.0 Ω max enables <10 mV output shift per 80 mA load change - critical for ADC reference stability |
| Grade B3 voltage tolerance | ±2.0% zener voltage spread (10.82–11.26 V) - reduces binning requirements in volume production |
| High junction temperature rating | 200°C Tj max supports use in sealed enclosures or near heat-generating components without derating |
| Low leakage current | ≤0.2 μA at 7.0 V reverse bias - preserves battery life in always-on sensor nodes and backup power monitors |
Applications
| Industrial Power Monitoring | Microcontroller I/O Protection |
|---|---|
Use Scenario: Monitoring 12 V DC bus in programmable logic controllers with ±1% accuracy requirement. IC Role / Device Role / Timing Role: Shunt voltage reference for ADC input scaling and overvoltage fault detection. Use Value: Maintains regulation within 11.0 V ±0.1 V across –40°C to +85°C ambient, enabling single-point calibration. |
Use Scenario: Protecting 3.3 V GPIO pins of ARM Cortex-M microcontrollers against 12 V supply coupling faults. IC Role / Device Role / Timing Role: Clamp diode placed between I/O line and 3.3 V rail to divert transient energy. Use Value: Activates at 11.0 V before damage threshold of 15 V, limiting clamp current to <50 mA with 8 Ω impedance. |
| Programmable Sensor Calibration | Legacy Analog Signal Conditioning |
Use Scenario: Providing stable 11.0 V reference for 16-bit DACs in field-configurable industrial transmitters. IC Role / Device Role / Timing Role: Precision voltage source for DAC full-scale adjustment and offset trimming. Use Value: Temperature coefficient of +0.04 %/°C yields only ±0.44 mV drift over 100°C range - within DAC INL spec. |
Use Scenario: Replacing aging zeners in analog front-ends of legacy test equipment requiring long-term drift stability. IC Role / Device Role / Timing Role: Primary voltage reference for op-amp gain-setting networks and comparator thresholds. Use Value: 400 mW rating and 200°C Tj allow operation at elevated board temperatures without recalibration cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4740A | Zener voltage 10.0 V (±5%), rd = 7 Ω, Pd = 1.0 W, DO-41 package | Higher power but wider voltage tolerance; less suitable for tight-tolerance references | Select when higher surge capability is needed and ±5% VZ is acceptable |
| BZX84-C11 | Zener voltage 11.0 V (±5%), rd = 20 Ω, Pd = 300 mW, SOT-23 package | Surface-mount, higher impedance, lower power - better for space-constrained digital I/O clamping | Select for PCB area savings and reflow assembly where 20 Ω rd meets system noise budget |
Compared with 1N4740A and BZX84-C11, the HZS11NB3TD-E offers tighter Grade B3 voltage tolerance (±2.0%), lower dynamic resistance (8.0 Ω), and higher junction temperature rating (200°C), making it preferred for industrial-grade analog references where long-term stability and thermal robustness are prioritized over package size or surge rating.
Availability
HZS11NB3TD-E is available at Aetrix Electronics and suitable for industrial power monitoring, microcontroller I/O protection, programmable sensor calibration, and legacy analog signal conditioning requiring stable component supply and long-lifecycle support.
Supply support for HZS11NB3TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The HZS-N Series belongs to Renesas' discrete voltage reference product line, engineered for high-stability, low-drift zener regulation in industrial power systems and precision analog interfaces.
FAQ
What is the exact zener voltage range for HZS11NB3TD-E at 5 mA?
The HZS11NB3TD-E has a guaranteed zener voltage range of 10.82 V to 11.26 V when tested at IZ = 5 mA and Ta = 25°C. This Grade B3 tolerance (±2.0%) is confirmed in the Renesas REJ03G0185-0300 datasheet, page 3, and reflects tighter specification control than standard Grade B2 or B1 variants. The HZS11NB3TD-E maintains this range across its qualified operating temperature span.
Is HZS11NB3TD-E RoHS compliant?
Yes, HZS11NB3TD-E complies with the EU RoHS Directive (2011/65/EU) as confirmed by Renesas Electronics' environmental compliance documentation. The device contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE) above threshold limits. Full material declarations and test reports for HZS11NB3TD-E are available upon request from Aetrix Electronics.
What is the maximum allowable reverse voltage before breakdown for HZS11NB3TD-E?
The HZS11NB3TD-E begins controlled zener conduction at its specified breakdown range (10.82–11.26 V). Below this, reverse leakage remains ≤0.2 μA up to 7.0 V (per datasheet, page 3). Operation above 11.26 V is intentional regulation - not "breakdown" in failure mode. The absolute maximum non-destructive reverse voltage is governed by Pd = 400 mW; exceeding IZ × VZ > 400 mW risks thermal runaway. No separate VRSM or VRRM rating is defined for HZS11NB3TD-E.
Can HZS11NB3TD-E be used in surface-mount designs?
No - HZS11NB3TD-E uses the axial-lead MHD package (JEITA GRZZ0002ZC-A) with 26.0 mm body length and 0.4 mm leads, designed exclusively for through-hole mounting and 5 mm-pitch automated insertion. It is not compatible with reflow soldering or pick-and-place SMT processes. For surface-mount equivalents, consider BZX84-C11 or MMBZ5240B, though these differ in voltage tolerance and impedance from the HZS11NB3TD-E.
What is the thermal resistance junction-to-ambient for HZS11NB3TD-E?
The datasheet does not specify a numerical θJA value for HZS11NB3TD-E. Instead, Figure 3 (page 5) provides derating curves showing power dissipation vs. ambient temperature for a standard 100 × 180 × 1.6 mm paper-phenol PCB layout. At 70°C ambient, Pd is derated to ~280 mW; at 100°C, to ~180 mW. Designers must apply these empirical curves - not a fixed θJA - when sizing heatsinking or airflow for HZS11NB3TD-E in high-temperature enclosures.
HZS11NB3TD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS11NB3TD-E FAQ
1.How can I place an order for HZS11NB3TD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS11NB3TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS11NB3TD-E reliable?
The price and inventory of HZS11NB3TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS11NB3TD-E is usually 5 days.
3.What payment methods are accepted for HZS11NB3TD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS11NB3TD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS11NB3TD-E?
HZS11NB3TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS11NB3TD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS11NB3TD-E?
For technical support, including HZS11NB3TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS11NB3TD-E requirements.
6.How does Aetrix verify that HZS11NB3TD-E is sourced from the original manufacturer or authorized distributors?
All HZS11NB3TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS11NB3TD-E meets industry standards.
7.What is the process for return or replacement of HZS11NB3TD-E?
All HZS11NB3TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS11NB3TD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS11NB3TD-E part is unused and in its original packaging.
Return procedure for HZS11NB3TD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZS11NB3TD-E Tags
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