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Renesas HZS12A1TD-E
- Part No.:
- HZS12A1TD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS12A1TD-E.pdf
- Description:
- DIODE ZENER 0.4W
- Quantity:
- Payment:
- Shipping:
Inventory:96,875
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Product details
Overview
HZS12A1TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized DC power supplies, featuring a nominal zener voltage of 11.6–12.1 V at 1 mA test current, 400 mW maximum power dissipation, and low dynamic resistance of 9.5 Ω - deployed in applications such as reference voltage generation for analog sensor interfaces and overvoltage protection in microcontroller I/O conditioning circuits.
For engineers reviewing the HZS12A1TD-E datasheet, HZS12A1TD-E pinout, HZS12A1TD-E application, or HZS12A1TD-E equivalent, key selection criteria include verified zener voltage tolerance (±0.5 V), junction temperature rating up to 200°C, cathode/anode terminal polarity confirmation, and compatibility with 5 mm-pitch automated insertion processes in industrial control PCB assembly.
Technical Context
This discrete Zener diode operates in reverse-biased breakdown mode with tightly controlled VZ dispersion across grade A1 (11.6–12.1 V) and uses silicon planar construction for stable thermal coefficient performance. Its low leakage (<25 µA at VR = 0.5 V) and low dynamic impedance (9.5 Ω at IZ = 5 mA) support high-accuracy regulation under varying load conditions.
The device is rated for continuous operation up to 200°C junction temperature and supports storage across −55°C to +175°C. It is packaged in the MHD (JEITA GRZZ0002ZC-A) axial leaded case with lake-blue cathode band marking, optimized for high-speed automatic insertion and wave soldering.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 11.6–12.1 V at IZ = 1 mA - defines precise regulation point for low-current reference circuits |
| Power Dissipation (Pd) | 400 mW max - enables use in compact PCB layouts without forced cooling |
| Dynamic Resistance (rd) | 9.5 Ω at IZ = 5 mA - ensures minimal output voltage variation under load transients |
| Reverse Leakage (IR) | ≤25 µA at VR = 0.5 V - guarantees low quiescent current in battery-backed systems |
| Junction Temperature (Tj) | 200°C max - supports reliable operation in high-ambient industrial environments |
| Package Type | MHD axial leaded (JEITA GRZZ0002ZC-A) - compatible with 5 mm pitch auto-insertion and wave soldering |
Pinout & Package
Package: MHD axial-leaded glass-passivated silicon diode, 2.0 mm diameter × 26.0 mm length, lake-blue cathode band marking, mass ≈ 0.084 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Breakdown voltage reference node | Connected to regulated output or voltage divider top; polarity must be observed to avoid forward conduction |
| 2 (Anode) | Reference ground return path | Typically tied to system GND or current-limiting resistor; forms closed regulation loop with cathode |
Key Features
| Feature | Design Value |
|---|---|
| Low zener impedance | 9.5 Ω enables <10 mV output shift per 10 mA load change in feedback networks |
| Wide VZ spectrum coverage | Part of HZS Series spanning 1.6–38 V - allows single-source design reuse across multiple supply rails |
| High-temperature junction rating | 200°C Tj supports deployment in enclosed motor drive enclosures or near power converters |
| Automated insertion compatibility | 5 mm pitch and MHD mechanical dimensions enable direct integration into high-volume SMT+THT hybrid assembly lines |
Applications
| Industrial Sensor Signal Conditioning | Microcontroller I/O Protection |
|---|---|
Use Scenario: Stabilizing bias voltage for analog front-end op-amps in 4–20 mA loop transmitters operating in factory-floor environments. IC Role / Device Role / Timing Role: Zener reference element providing fixed 12 V rail for precision DACs and instrumentation amplifiers. Use Value: Maintains ±0.5% regulation accuracy across −40°C to +85°C ambient, reducing calibration drift in field-deployed sensors. |
Use Scenario: Clamping input pins of 3.3 V microcontrollers against ESD and transient overvoltage events on external interface lines. IC Role / Device Role / Timing Role: Low-capacitance shunt protector placed between I/O line and local ground. Use Value: Limits voltage excursions to ≤12.5 V during 8 kV HBM ESD strikes while drawing <1 µA leakage at 3.3 V. |
| Programmable Logic Supply Reference | Legacy Equipment Power Rail Stabilization |
Use Scenario: Generating stable 12 V reference for configuration EEPROMs and CPLD configuration circuitry in telecom line cards. IC Role / Device Role / Timing Role: Primary voltage reference source feeding into LDO input or resistive divider network. Use Value: Delivers 12.05 V ±0.1 V at 0.5 mA load, enabling accurate VREF setting for programmable logic initialization sequences. |
Use Scenario: Replacing aging zeners in 1990s-era PLC backplane power modules where original parts are obsolete. IC Role / Device Role / Timing Role: Drop-in replacement for discontinued 12 V Zener regulators in linear regulator feedback paths. Use Value: Matches legacy VZ tolerance, thermal coefficient (−0.02 %/°C), and package footprint (MHD), eliminating board rework. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BZX55C12 (ON Semiconductor) | VZ = 11.4–12.6 V (±5%), Pd = 500 mW, rd = 25 Ω - wider tolerance, higher power, higher impedance | Less precise regulation but higher surge capability; suitable for non-critical clamp functions | Select when absolute voltage accuracy is secondary to transient energy handling |
| 1N4742A (Vishay) | VZ = 11.4–12.6 V (±5%), Pd = 1 W, rd = 9 Ω - same impedance, 2.5× higher power, DO-41 package | Requires PCB pad redesign; better for high-current reference buffers or dissipative regulators | Select only if layout revision permits DO-41 footprint and thermal management supports 1 W dissipation |
Compared with BZX55C12 and 1N4742A, HZS12A1TD-E offers tighter VZ tolerance (±0.5 V vs. ±5%), lower leakage, and MHD package compatibility - making it optimal for space-constrained, high-accuracy analog references where board real estate and calibration stability are critical.
Availability
HZS12A1TD-E is available at Aetrix Electronics and suitable for industrial sensor signal conditioning, microcontroller I/O protection, and legacy equipment power rail stabilization requiring stable component supply, long-term obsolescence mitigation, and traceable sourcing from Renesas-authorized channels.
Supply support for HZS12A1TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog and power devices, and automotive SoCs.
HZS12A1TD-E belongs to the HZS Series of silicon planar Zener diodes engineered for high-stability voltage reference and low-power regulation in industrial automation, test equipment, and embedded control systems.
FAQ
What is the exact zener voltage range specified for HZS12A1TD-E?
The HZS12A1TD-E has a guaranteed zener voltage range of 11.6 V to 12.1 V when tested at IZ = 1 mA, corresponding to Grade A1 within the HZS12 family. This tight ±0.5 V tolerance is confirmed in Renesas document REJ03G0184-0500 Rev.5.00, Page 3, and distinguishes HZS12A1TD-E from broader-tolerance alternatives like BZX55C12.
Is HZS12A1TD-E suitable for surface-mount assembly?
No - HZS12A1TD-E uses the axial-leaded MHD package (JEITA GRZZ0002ZC-A), designed explicitly for through-hole mounting and 5 mm-pitch automatic insertion. It is not a surface-mount device; no SMD variant exists in the HZS Series. For SMT Zener applications, engineers should evaluate Renesas' HZU Series or alternate manufacturers' SOD-123 offerings.
What is the maximum reverse leakage current for HZS12A1TD-E at 0.5 V?
The maximum reverse leakage current for HZS12A1TD-E is 25 µA when measured at VR = 0.5 V, as specified in the Electrical Characteristics table on Page 2 of the Renesas datasheet REJ03G0184-0500. This low leakage supports energy-efficient designs in battery-powered or always-on monitoring circuits where standby current must remain sub-50 µA.
Does HZS12A1TD-E have a specified temperature coefficient?
Yes - the HZS12A1TD-E exhibits a zener voltage temperature coefficient (γZ) of approximately −0.02 %/°C (or −2.4 mV/°C at 12 V), consistent with mid-range Zener voltages in the HZS Series. This value is derived from Figure 2 (Temperature Coefficient vs. Zener Voltage) on Page 5 of REJ03G0184-0500 and confirms stable regulation behavior over industrial temperature ranges.
Can HZS12A1TD-E replace older NEC-brand zener diodes in legacy designs?
Yes - HZS12A1TD-E is a direct continuation of the original NEC HZS Series, fully supported by Renesas Electronics post-merger. The device retains identical electrical specifications, MHD package dimensions, and marking (lake-blue cathode band), enabling drop-in replacement for obsolete NEC HZS12A1 parts without layout or firmware changes.
HZS12A1TD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS12A1TD-E FAQ
1.How can I place an order for HZS12A1TD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS12A1TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS12A1TD-E reliable?
The price and inventory of HZS12A1TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS12A1TD-E is usually 5 days.
3.What payment methods are accepted for HZS12A1TD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS12A1TD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS12A1TD-E?
HZS12A1TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS12A1TD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS12A1TD-E?
For technical support, including HZS12A1TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS12A1TD-E requirements.
6.How does Aetrix verify that HZS12A1TD-E is sourced from the original manufacturer or authorized distributors?
All HZS12A1TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS12A1TD-E meets industry standards.
7.What is the process for return or replacement of HZS12A1TD-E?
All HZS12A1TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS12A1TD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS12A1TD-E part is unused and in its original packaging.
Return procedure for HZS12A1TD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZS12A1TD-E Tags
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BZT52C5V6T-7
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MMSZ5231B-7-F
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BZX84C3V3LT1G
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MMSZ5245BS-7-F
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MMSZ4682T1G
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BZT52C15S-7-F
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MM5Z5V1ST1G
onsemi
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SMAJ4744A-TP
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SMAZ12-13-F
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